HITACHI 2SK2685

2SK2685
GaAs HEMT
ADE-208-400
1st. Edition
Application
UHF low noise amplifier
Features
• Excellent low noise characteristics.
Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz)
• High associated gain.
Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)
• High voltage.
VDS = 6 or more voltage.
• Small package. (CMPAK-4)
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate
3. Source
4. Drain
2SK2685
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
6
V
Gate to source voltage
VGSO
–6
V
Gate to drain voltage
VGDO
–7
V
Drain current
ID
20
mA
Channel power dissipation
Pch
100
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
–55 to +125
°C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Gate to source leak current
I GSS
—
—
–20
µA
VGS = –6 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
–0.3
—
–2.0
V
VDS = 3 V, ID = 100 µA
Drain current
I DSS
35
50
70
mA
VDS = 3 V, VGS = 0
(Pulse Test)
Forward transfer admittance
|yfs|
40
60
—
mS
VDS = 3 V, ID = 10 mA,
f = 1 kHz
Associated gain
Ga
—
17.0
—
dB
VDS = 3 V, ID = 10 mA,
f = 2 GHz
Associated gain
Ga
—
15.2
—
dB
VDS = 3 V, ID = 3 mA,
f = 2 GHz
Associated gain
Ga
16
21.4
—
dB
VDS = 3 V, ID = 10 mA,
f = 900 MHz
Associated gain
Ga
—
19.7
—
dB
VDS = 3 V, ID = 3 mA,
f = 900 MHz
Minimum noise figure
Fmin
—
0.83
—
dB
VDS = 3 V, ID = 10 mA,
f = 2 GHz
Minimum noise figure
Fmin
—
1.08
—
dB
VDS = 3 V, ID = 3 mA,
f = 2 GHz
Minimum noise figure
Fmin
—
0.52
1.0
dB
VDS = 3 V, ID = 10 mA,
f = 900 MHz
Minimum noise figure
Fmin
—
0.74
—
dB
VDS = 3 V, ID = 3 mA,
f = 900 MHz
Note: Marking is “ZT–”.
2
2SK2685
Typical Output Characteristics
20
–0.4
200
16
Drain Current ID (mA)
Channel Power Dissipation Pch (mW)
Maximum Channel Power
Dissipation Curve
150
100
50
–0.5
V
Pulse Test
12
–0.6 V
8
–0.7 V
4
–0.8 V
VGS = –0.9 V
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Forward Transfer Admittance yfs (mS)
100
80
VDS = 3 V
Pulse Test
60
40
20
–2.0
–1.6
–1.2
–0.8
–0.4
Gate to Source Voltage VGS (V)
1
2
3
4
Drain to Source Voltage VDS (V)
5
Forward Transfer Admittance vs.
Gate to Source Voltage
Typical Transfer Characteristics
Drain Current ID (mA)
–0.3 V
–0.1 V
V
0
100
VDS = 3 V
Pulse Test
80
60
40
20
0
–2.0
–1.6
–1.2
–0.8
–0.4
Gate to Source Voltage VGS (V)
0
3
2SK2685
Associated Gain vs. Drain Current
30
100
VDS = 3 V
Pulse Test
80
Associated Gain Ga (dB)
Forward Transfer Admittance yfs (mS)
Forward Transfer Admittance vs.
Drain Current
60
40
20
0
4
8
12
16
Drain Current ID (mA)
f = 900 MHz
3V
VDS = 1 V
f = 2 GHz
10
Minimum Noise Figure vs. Drain Current
V DS
1V
3V
3V
Associated Gain Ga (dB)
Minimum Noise Figure Fmin (dB)
f = 2 GHz
V
=1
f = 900 MHz
20
2 GHz
10
ID = 10 mA
f = 900 MHz
4
30
30
2
0
10
20
Drain Current ID (mA)
Associated Gain vs. Drain to Source Voltage
3
1
1V
20
0
20
3V
10
20
Drain Current ID (mA)
30
0
2
4
6
8
Drain to Source Voltage VDS (V)
10
2SK2685
Minimum Noise Figure vs.
Drain to Source Voltage
Isolation vs. Drain Current
50
3V
Isolation S21 – S12 (dB)
ID = 10 mA
2.0
1.0
2 GHz
VDS = 1 V
40
30
20
10
f = 900 MHz
f = 900 MHz
0
2
4
6
8
Drain to Source Voltage VDS (V)
10
0
10
20
Drain Current ID (mA)
30
Isolation vs. Drain Current
50
Isolation S21 – S12 (dB)
Minimum Noise Figure Fmin (dB)
3.0
40
3V
VDS = 1 V
30
20
10
f = 2 GHz
0
10
20
Drain Current ID (mA)
30
5
2SK2685
S11 Parameter vs. Frequency
0.8
0.6
1
S12 Parameter vs. Frequency
90°
1.5
Scale : 0.02/div.
60°
120°
2
0.4
3
150°
4
5
0.2
30°
10
0.2
0
0.4 0.6 0.8 1.0
1.5 2
3 4 5
10
∞
0°
180°
–10
–0.2
–5
–4
–3
–0.4
–30°
–150°
–2
–0.6
–60°
–90°
Condition : ID = 10 mA, Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(VDS = 1 V)
(VDS = 3 V)
–120°
–1.5
–0.8 –1
Condition : ID = 10 mA, Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(VDS = 1 V)
(VDS = 3 V)
S22 Parameter vs. Frequency
S21 Parameter vs. Frequency
90°
120°
Scale : 2/div.
60°
0.6
0.8
1
1.5
2
0.4
3
150°
30°
4
5
0.2
10
0°
180°
0.2
0
0.4 0.6 0.8 1.0
1.5 2
3 4 5
10
∞
–10
–0.2
–5
–4
–3
–30°
–150°
–0.4
–120°
–60°
–90°
Condition : ID = 10 mA, Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(VDS = 1 V)
(VDS = 3 V)
6
–2
–0.6
–1.5
–0.8 –1
Condition : ID = 10 mA, Zo = 50 Ω
200 to 2000 MHz (200 MHz step)
(VDS = 1 V)
(VDS = 3 V)
2SK2685
S Parameter (VDS = 1 V, ID = 10 mA, ZO = 50 )
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.996
–4.8
5.12
175.8
0.00691
89.8
0.688
–3.2
400
0.980
–9.5
5.13
169.9
0.0143
88.2
0.682
–6.5
600
0.977
–15.0
5.07
165.4
0.0210
83.3
0.674
–10.6
800
0.970
–19.9
4.94
161.6
0.0276
81.5
0.668
–13.8
1000
0.952
–24.4
4.84
156.5
0.0399
79.3
0.658
–17.2
1200
0.938
–29.2
4.74
152.7
0.0404
76.0
0.648
–20.7
1400
0.916
–34.0
4.67
147.7
0.0462
74.8
0.636
–23.7
1600
0.896
–38.2
4.55
144.1
0.0523
73.1
0.622
–27.1
1800
0.882
–42.9
4.47
140.0
0.0578
72.0
0.611
–29.9
2000
0.859
–47.1
4.36
135.8
0.0630
70.3
0.597
–33.1
S Parameter (VDS = 3 V, ID = 10 mA, ZO = 50 Ω)
Freq.
S11
S21
S12
S22
(MHz)
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
MAG.
ANG.
200
0.998
–4.0
5.13
175.8
0.00581
89.8
0.802
–3.2
400
0.988
–9.2
5.14
170.1
0.0110
85.5
0.796
–6.5
600
0.978
–14.5
5.08
165.2
0.0163
83.3
0.790
–9.8
800
0.968
–19.4
4.95
161.4
0.0216
82.0
0.783
–13.3
1000
0.953
–24.2
4.85
156.4
0.0363
79.2
0.774
–16.4
1200
0.937
–28.7
4.75
152.5
0.0312
76.5
0.764
–19.4
1400
0.917
–33.3
4.68
147.8
0.0358
75.3
0.753
–22.5
1600
0.900
–37.5
4.57
144.0
0.0401
73.2
0.742
–25.4
1800
0.883
–41.9
4.49
140.1
0.0442
72.8
0.731
–28.1
2000
0.858
–46.1
4.37
135.9
0.0477
71.4
0.718
–31.1
7
Unit: mm
0.1
0.3 +– 0.05
0.2
0.65 0.6
1.25 ± 0.2
0.9 ± 0.1
0.1
0.4 +– 0.05
0 – 0.1
0.425
0.1
0.3 +– 0.05
+ 0.1
0.16– 0.06
2.1 ± 0.3
0.65 0.65
1.25 ± 0.1
0.1
0.3 +– 0.05
0.425
2.0 ± 0.2
1.3 ± 0.2
Hitachi Code
JEDEC
EIAJ
Weight (reference value)
CMPAK-4(T)
—
Conforms
0.006 g
Datasheet Title
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.
2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.
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Datasheet Title
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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.
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