HAF2002 Silicon N Channel MOS FET Series Power Switching ADE-208-503 A (Z) 2nd. Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. • Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline TO–220FM D Gate resistor G Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit 1 2 S 3 1. Gate 2. Drain 3. Source HAF2002 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS 16 V Gate to source voltage VGSS –2.8 V Drain current ID 20 A 40 A 20 A 30 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Note1 Note2 Channel dissipation Pch Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C Typical Operation Characteristics Item Symbol Min Typ Max Unit Input voltage VIH 3.5 — — V VIL — — 1.2 V Input current I IH1 — — 100 µA Vi = 8V, VDS = 0 (Gate non shut down) I IH2 — — 50 µA Vi = 3.5V, VDS = 0 I IL — — 1 µA Vi = 1.2V, VDS = 0 Input current I IH(sd)1 — 0.8 — mA Vi = 8V, VDS = 0 (Gate shut down) I IH(sd)2 — 0.35 — mA Vi = 3.5V, VDS = 0 Shut down temperature Tsd — 175 — °C Channel temperature Gate operation voltage VOP 3.5 — 13 V 2 Test Conditions HAF2002 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain current I D1 10 — — A VGS = 3.5V, VDS = 2V Drain current I D2 — — 10 mA VGS = 1.2V, VDS = 2V Drain to source breakdown voltage V(BR)DSS 60 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 16 — — V I G = 100µA, VDS = 0 Gate to source breakdown voltage V(BR)GSS –2.8 — — V I G = –100µA, VDS = 0 Gate to source leak current I GSS1 — — 100 µA VGS = 8V, VDS = 0 I GSS2 — — 50 µA VGS = 3.5V, VDS = 0 I GSS3 — — 1 µA VGS = 1.2V, VDS = 0 I GSS4 — — –100 µA VGS = –2.4V, VDS = 0 I GS(op)1 — 0.8 — mA VGS = 8V, VDS = 0 I GS(op)2 — 0.35 — mA VGS = 3.5V, VDS = 0 Zero gate voltege drain current I DSS — — 250 µA VDS = 50 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V I D = 1mA, VDS = 10V Static drain to source on state resistance RDS(on) — 50 65 mΩ I D = 10A, VGS = 4V Note3 Static drain to source on state resistance RDS(on) — 30 43 mΩ I D = 10A, VGS = 10V Note3 Forward transfer admittance |yfs| 6 12 — S I D = 10A, VDS = 10V Note3 Output capacitance Coss — 630 — pF VDS = 10V , VGS = 0 Input current (shut down) f = 1 MHz Turn-on delay time t d(on) — 7.5 — µs I D = 5A, VGS = 5V Rise time tr — 29 — µs RL = 6Ω Turn-off delay time t d(off) — 34 — µs Fall time tf — 26 — µs Body–drain diode forward VDF — 1.0 — V I F = 20A, VGS = 0 t rr — 110 — ns I F = 20A, VGS = 0 voltage Body–drain diode reverse recovery time diF/ dt =50A/µs Over load shut down operation time Note: Note4 t os1 — 1.8 — ms VGS = 5V, VDD = 12V t os2 — 0.7 — ms VGS = 5V, VDD = 24V 3. Pulse test 4. Include the time shift based on increasing of channel temperature when operate under over load condition. See characteristic curve of HAF2001. 3 HAF2002 Main Characteristics Power vs. Temperature Derating 500 I D (A) 30 Drain Current Channel Dissipation Pch (W) 40 20 10 50 100 150 200 20 µs 50 10 0µ 20 DC 10 PW Op 0.3 s =1 tio s n( Tc 2 s 1m 0m era 5 0.5 Case Temperature Tc (°C) 4 Thermal shut down 200 Operation area 100 1 0 Maximum Safe Operation Area Operation in this area is limited by R DS(on) = 25 °C ) Ta = 25 °C 0.5 1 2 5 10 20 Drain to Source Voltage V 50 100 (V) DS HAF2002 Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance g s (t) 10 1 Tc = 25°C D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 t sho 0.01 q ch – c(t) = g s (t) • q ch – c q ch – c = 4.17 °C/W, Tc = 25 °C lse pu PDM 1 D= PW T PW T 0.001 10 µ 100 µ 1m 100 m 10 m Pulse Width 1 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor VGS Monitor 90% D.U.T. RL VGS VGS 5V 50W V DD = 30 V Vout 10% 10% 90% td(on) tr 10% 90% td(off) tf 5 HAF2002 Package Dimensions Unit: mm 2.8 ± 0.2 2.5 ± 0.2 10.0 ± 0.3 7.0 ± 0.3 0.7 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 2.7 14.0 ± 1.0 4.45 ± 0.3 2.0 ± 0.3 5.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 17.0 ± 0.3 12.0 ± 0.3 0.6 f 3.2 ± 0.2 0.5 ± 0.1 Hitachi Code EIAJ JEDEC 6 TO–220FM SC–67 — Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.