HITACHI 4AM17

4AM17
Silicon N/P Channel MOS FET
High Speed Power Switching
ADE-208-729 (Z)
1st. Edition
February 1999
Features
• Low on-resistance
N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A
P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A
• 4 V gate drive devices.
• High density mounting
Outline
SP-12
12
1
G
2
D
S 3
5
G
4
D
S 6
8
G
9
D
S 7
12
G
11
D
S 10
34
56
78
910
1112
1, 5, 8, 12. Gate
2, 4, 9, 11. Drain
3, 6, 7, 10. Source
4AM17
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Nch
Pch
Drain to source voltage
VDSS
60
–60
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
8
–8
A
32
–32
A
8
–8
A
Drain peak current
I D(pulse)
Body-drain diode reverse drain current
I DR
Channel dissipation
Note1
Pch (Tc = 25°C)
Note2
Note2
28
W
4.0
W
Channel dissipation
Pch
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
2
1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 4 devices operation
4AM17
Electrical Characteristics (Ta = 25°C)
( N Channel )
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
I DSS
—
—
250
µA
VDS = 50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on)
—
0.13
0.17
Ω
I D = 4 A, VGS = 10 V Note3
resistance
RDS(on)
—
0.19
0.24
Ω
I D = 4 A, VGS = 4 V Note3
Forward transfer admittance
|yfs|
3.5
5.5
—
S
I D = 4 A, VDS = 10 V Note3
Input capacitance
Ciss
—
33
—
pF
VDS = 10 V
Output capacitance
Coss
—
220
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
5.2
—
pF
f = 1 MHz
Gate series resistance
Rg
—
1.5
—
kΩ
VDS = 10 V, VGS = 0
f = 1 MHz
Turn-on delay time
t d(on)
—
0.15
—
ns
VGS = 10 V, ID = 4 A
Rise time
tr
—
0.5
—
ns
RL = 7.5 Ω
Turn-off delay time
t d(off)
—
3.2
—
ns
Fall time
tf
—
1.4
—
ns
Body–drain diode forward voltage
VDF
—
1.5
—
V
I F = 8 A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
850
—
ns
I F = 8 A, VGS = 0
diF/ dt = 50 A/ µs
Note:
3.
Pulse test
3
4AM17
( P Channel )
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V(BR)DSS
–60
—
—
V
I D = –10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
I DSS
—
—
–250
µA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
–2.5
V
VDS = –10 V, I D = –1 mA
Static drain to source on state
RDS(on)
—
0.15
0.2
Ω
I D = –4 A, VGS = –10 V Note3
resistance
RDS(on)
—
0.2
0.27
Ω
I D = –4 A, VGS = –4 V Note3
Forward transfer admittance
|yfs|
3.5
6.0
—
S
I D = –4 A, VDS = –10 V Note3
Input capacitance
Ciss
—
17
—
pF
VDS = –10 V
Output capacitance
Coss
—
460
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
1.2
—
pF
f = 1 MHz
Gate series resistance
Rg
—
3.2
—
kΩ
VDS = 0, VGS = 0 f = 1 MHz
Turn-on delay time
t d(on)
—
0.6
—
ns
VGS = –10 V, ID = –4 A
Rise time
tr
—
2.1
—
ns
RL = 7.5 Ω
Turn-off delay time
t d(off)
—
12
—
ns
Fall time
tf
—
5.8
—
ns
Body–drain diode forward voltage
VDF
—
–1.2
—
V
I F = –8 A, VGS = 0
Body–drain diode reverse
recovery time
t rr
—
2.5
—
ns
I F = –8 A, VGS = 0
diF/ dt = 50 A/ µs
Note:
4
3.
Pulse test
4AM17
Main Characteristics
Pc (W)
5
Maximum Channel Dissipation Curve
Condition : Channel dissipation of
each die is is idetical
4 Device Operation
Collector Power Dissipation
Collector Power Dissipation
Pc (W)
Maximum Channel Dissipation Curve
6
3 Device Operation
4
2 Device Operation
1 Device Operation
3
2
1
0
60
10
Maximum Safe Operation Area
(N–channel)
1
s
(1
sh
Operation in
this area is
limited by R DS(on)
ot
)
=
25
25
)
)
°C
°C
–0.2
µs
c
–0.5
µs
(T
=
0.3
1
3
10
30
100
Drain to Source Voltage V DS (V)
m
n
c
(T
0.05
0.1
Ta = 25 °C
–2
–1
tio
n
0.2
10
ra
tio
)
=
pe
ra
pe
ot
0
O
O
sh
–5
10
C
C
(1
PW
s
s
m
s
Operation in
this area is
limited by R DS(on)
µs
–10
D
10
m
I D (A)
=
Drain Current
0
10
–20
m
5
10
µs
1
I D (A)
PW
D
Drain Current
10
0.1
150
–50
10
20
0.5
25
50
75 100 125
Case Temperature Tc (°C)
Maximum Safe Operation Area
(P–channel)
50
2
1
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
20
0
25
50
75 100 125 150
Ambient Temperature Tc (°C)
Condition : Channel dissipation of
each die is is idetical
–0.1
Ta = 25 °C
–0.05
–0.1 –0.3
–1
–3
–10 –30 –100
Drain to Source Voltage V DS (V)
5
4AM17
Package Dimensions
Unit: mm
4.0 ± 0.2
0.85 ± 0.1
1
2
3
1.4
4
5
6
7
2.54
8
9
10
11
10.5 ± 0.5
2.7
10.0 ± 0.3
31.0 ± 0.3
1.5 ± 0.2
+0.1
0.55 –0.06
12
Hitachi Code
JEDEC
EIAJ
6
SP-12
—
—
4AM17
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
7