HD74ALVCH16260 12-bit to 24-bit Multiplexed D-type Latches with 3-state Outputs ADE-205-135B (Z) 3rd. Edition December 1999 Description The HD74ALVCH16260 is a 12-bit to 24-bit multiplexed D-type latch used in applications where two separate data paths must be multiplexed onto, or demultiplexed from, a single data path. Typical applications include multiplexing and / or demultiplexing of address and data information in microprocessor or bus interface applications. This device is also useful in memory interleaving applications. Three 12-bit I / O ports (A1-A12, 1B1-1B12, and 2B1-2B12) are available for address and / or data transfer. The output enable (OE1B, OE2B, and OEA) inputs control the bus transceiver functions. The OE1B and OE2B control signals also allow bank control in the A-to-B direction. Address and / or data information can be stored using the internal storage latches. The latch enable (LE1B, LE2B, LEA1B, and LEA2B) inputs are used to control data storage. When the latch enable input is high, the latch is transparent. When the latch enable input goes low, the data present at the inputs is latched and remains latched until the latch enable input is returned high. Active bus hold circuitry is provided to hold unused or floating data inputs at a valid logic level. Features • VCC = 2.3 V to 3.6 V • Typical VOL ground bounce < 0.8 V (@VCC = 3.3 V, Ta = 25°C) • Typical VOH undershoot > 2.0 V (@VCC = 3.3 V, Ta = 25°C) • High output current ±24 mA (@V CC = 3.0 V) • Bus hold on data inputs eliminates the need for external pullup / pulldown resistors HD74ALVCH16260 Function Table Inputs Output A 1B 2B SEL LE1B LE2B OEA H X H H X L H L X H H X L L X X H L X L A0 *1 X H L X H L H X L L X H L L X X L X L L A0 *1 X X X X X H Z B-to-A (OEB = H) Inputs Outputs A LEA1B LEA2B OE1B OE2B 1B 2B H H H L L H H L H H L L L L H H L L L H 2B0 *1 L H L L L L 2B0 *1 H L H L L 1B0 *1 H L 1B0 *1 L *1 2B0 *1 L L H L X L L L L 1B0 X X X H H Z Z X X X L H Active Z X X X H L Z Active X X X L L Active Active A-to-B (OEA = H) H : High level L : Low level X : Immaterial Z : High impedance Note: 1. Output level before the indicated steady state input conditions were established. 2 HD74ALVCH16260 Pin Arrangement OEA 1 56 OE2B LE1B 2 55 LEA2B 2B3 3 54 2B4 GND 4 53 GND 2B2 5 52 2B5 2B1 6 VCC 7 51 2B6 A1 8 49 2B7 A2 9 48 2B8 A3 10 47 2B9 50 VCC GND 11 46 GND A4 12 45 2B10 A5 13 44 2B11 A6 14 43 2B12 A7 15 42 1B12 A8 16 41 1B11 A9 17 40 1B10 GND 18 39 GND A10 19 38 1B9 A11 20 37 1B8 A12 21 36 1B7 VCC 22 35 VCC 1B1 23 34 1B6 1B2 24 33 1B5 GND 25 32 GND 1B3 26 31 1B4 LE2B 27 30 LEA1B SEL 28 29 OE1B (Top view) 3 HD74ALVCH16260 Absolute Maximum Ratings Item Supply voltage Input voltage *1, 2 Symbol Ratings Unit VCC –0.5 to 4.6 V VI –0.5 to 4.6 V –0.5 to VCC +0.5 Output voltage *1, 2 Conditions Except I/O ports I/O ports VO –0.5 to VCC +0.5 V Input clamp current I IK –50 mA VI < 0 Output clamp current I OK ±50 mA VO < 0 or VO > VCC Continuous output current IO ±50 mA VO = 0 to VCC VCC, GND current / pin I CC or IGND ±100 mA Maximum power dissipation at Ta = 55°C (in still air) *3 PT 1 W Storage temperature Tstg –65 to 150 °C Notes: TSSOP Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. 1. The input and output negative voltage ratings may be exceeded if the input and output clamp current ratings are observed. 2. This value is limited to 4.6 V maximum. 3. The maximum package power dissipation is calculated using a junction temperature of 150°C and a board trace length of 750 mils. Recommended Operating Conditions Item Symbol Min Max Unit Supply voltage VCC 2.3 3.6 V Input voltage VI 0 VCC V Output voltage VO 0 VCC V High level output current I OH — –12 mA — –12 VCC = 2.7 V — –24 VCC = 3.0 V — 12 — 12 VCC = 2.7 V — 24 VCC = 3.0 V Low level output current I OL mA Input transition rise or fall rate ∆t / ∆v 0 10 ns / V Operating temperature Ta –40 85 °C Note: Unused control inputs must be held high or low to prevent them from floating. 4 Conditions VCC = 2.3 V VCC = 2.3 V HD74ALVCH16260 Logic Diagram LE1B LE2B LEA1B LEA2B OE2B OE1B OEA SEL A1 2 27 30 55 56 29 1 28 C1 8 G1 1 1 1D 23 1B1 C1 1D 6 2B1 C1 1D C1 1D To eleven other channels 5 HD74ALVCH16260 Electrical Characteristics (Ta = –40 to 85°C) Item Symbol VCC (V) *1 Input voltage VIH VIL Output voltage VOH Min Max Unit 2.3 to 2.7 1.7 — V 2.7 to 3.6 2.0 — 2.3 to 2.7 — 0.7 2.7 to 3.6 — 0.8 I OH = –100 µA Min to Max VCC–0.2 — 2.3 2.0 — I OH = –6 mA, VIH = 1.7 V 2.3 1.7 — I OH = –12 mA, VIH = 1.7 V 2.7 2.2 — I OH = –12 mA, VIH = 2.0 V 3.0 2.4 — I OH = –12 mA, VIH = 2.0 V 3.0 2.0 — I OH = –24 mA, VIH = 2.0 V Min to Max — 0.2 I OL = 100 µA 2.3 — 0.4 I OL = 6 mA, VIL = 0.7 V 2.3 — 0.7 I OL = 12 mA, VIL = 0.7 V 2.7 — 0.4 I OL = 12 mA, VIL = 0.8 V 3.0 — 0.55 I OL = 24 mA, VIL = 0.8 V I IN 3.6 — ±5 I IN (hold) 2.3 45 — VIN = 0.7 V 2.3 –45 — VIN = 1.7 V 3.0 75 — VIN = 0.8 V 3.0 –75 — VIN = 2.0 V 3.6 — ±500 VIN = 0 to 3.6 V I OZ 3.6 — ±10 µA VOUT = VCC or GND Quiescent supply current I CC 3.6 — 40 µA VIN = VCC or GND 3.0 to 3.6 — 750 µA VIN = one input at (VCC–0.6) V, other inputs at V CC or GND VOL Input current Off state output current *2 ∆I CC V Test Conditions µA VIN = VCC or GND Notes: 1. For conditions shown as Min or Max, use the appropriate values under recommended operating conditions. 2. For I/O ports, the parameter I OZ includes the input leakage current. 6 HD74ALVCH16260 Switching Characteristics (Ta = –40 to 85°C) Item Symbol VCC (V) Min Typ Max Unit 2.5±0.2 150 — — MHz 2.7 150 — — 3.3±0.3 150 — — t PLH 2.5±0.2 1.2 — 5.6 t PHL 2.7 — — 5.1 3.3±0.3 1.2 — 4.3 2.5±0.2 1.0 — 6.2 2.7 — — 5.2 3.3±0.3 1.0 — 4.4 2.5±0.2 1.2 — 6.9 2.7 — — 6.6 3.3±0.3 1.1 — 5.6 t ZH 2.5±0.2 1.0 — 6.7 t ZL 2.7 — — 6.4 3.3±0.3 1.0 — 5.4 t HZ 2.5±0.2 1.7 — 5.7 t LZ 2.7 — — 5.0 3.3±0.3 1.3 — 4.6 2.5±0.2 1.4 — — 2.7 1.1 — — 3.3±0.3 1.1 — — 2.5±0.2 1.6 — — 2.7 1.9 — — 3.3±0.3 1.5 — — 2.5±0.2 3.3 — — 2.7 3.3 — — 3.3±0.3 3.3 — — Maximum clock frequency f max Propagation delay time Output enable time Output disable time Setup time Hold time Pulse width t su th tw FROM (Input) TO (Output) A or B B or A LE A or B SEL A ns OE A or B ns OE A or B ns ns ns ns Input capacitance CIN 3.3 — 3.5 — pF Control inputs Output capacitance CIN / O 3.3 — 9.0 — pF A or B ports 7 HD74ALVCH16260 • Test Circuit See under table 500 Ω S1 OPEN GND *1 C L = 50 pF 500 Ω Load Circuit for Outputs Symbol t PLH / t PHL t su / t h / t w t ZH/ t HZ t ZL / t LZ Vcc=2.5±0.2V Vcc=2.7V, 3.3±0.3V OPEN OPEN GND GND 4.6 V 6.0 V Note: 1. C L includes probe and jig capacitance. 8 HD74ALVCH16260 • Waveforms – 1 tf tr 90 % Input VIH 90 % Vref Vref 10 % 10 % GND t PHL t PLH VOH Output Vref Vref VOL • Waveforms – 2 tr VIH 90 % Vref Timing Input 10 % tsu GND th VIH Data Input Vref Vref GND tw VIH Input Vref Vref GND 9 HD74ALVCH16260 • Waveforms – 3 Output Control tf tr VIH 90 % 90 % Vref Vref 10 % t ZL 10 % GND t LZ ≈VOH1 Vref Waveform - A t ZH Waveform - B VOL + 0.3 V t HZ VOH – 0.3 V Vref VOL VOH ≈VOL1 TEST VIH Vref VOH1 VOL1 Vcc=2.5±0.2V Vcc=2.7V, 3.3±0.3V 2.3 V 2.7 V 1.2 V 2.3 V 1.5 V 3.0 V GND GND Notes: 1. All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz, Zo = 50 Ω, tr ≤ 2.5 ns, tf ≤ 2.5 ns. 2. Waveform – A is for an output with internal conditions such that the output is low except when disabled by the output control. 3. Waveform – B is for an output with internal conditions such that the output is high except when disabled by the output control. 4. The output are measured one at a time with one transition per measurement. 10 HD74ALVCH16260 Package Dimensions Unit : mm +0.3 14.00 –0.1 29 6.10 +0.3 –0.1 56 28 0.15 ± 0.05 0.08 M 0.40 Max 0.10 1.20 max 0.20 +0.1 –0.05 0.50 0.05 Min 1 8.10 ± 0.3 10° Max 0.50 ± 0.1 Hitachi code EIAJ code JEDEC code TTP-56D — — 11 HD74ALVCH16260 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/index.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. 12