LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL90F7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer QL90F7S-A/B/C InGaAs Laser Diode Jun.2004. Ver. 0 ♦OVERVIEW QL90F7S-A/B/C is a MOCVD grown 905nm band InGaAs laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 10mW for Laser, industrial optical module and sensor application ♦APPLICATION - Sensor ♦FEATURES - Visible Light Output : λp = 905 nm - Optical Power Output : 10mW CW - Package Type TO-18 (5.6mmφ) : - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL90F7SA Fig. 2 QL90F7SB Fig. 3 QL90F7SC ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Symbols Values Unit P 12 mW V 2 V V 30 V Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Topr −10 ~ +70 °C Storage Temperature Tstg −40 ~ +85 °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 10 - mW - Threshold Current Ith - 15 25 mA - Operating Current Iop - 40 60 mA Po=10mW Operating Voltage Vop 1.6 2.0 2.5 V Po=10mW SE 0.3 0.5 0.7 mW/mA λp 895 905 915 nm Po=10mW θ 9 13 15 deg Po=10mW θ⊥ 26 33 36 deg Po=10mW ∆θ - - ±2.5 deg Po=10mW ∆θ ⊥ - - ±3.0 deg Po=10mW Monitor Current Im 0.1 0.4 0.6 mA Po=10mW Optical Distance ∆X, ∆Y, ∆Z - - 60 µm Po=10mW Slope Efficiency Lasing Wavelength Beam Divergence Beam Angle NOTICE : QL90F7S-A/B/C to be operated on APC The above product specifications are subject to change without notice. ♦PACKAGE DIMENSION ♦PACKING