QL65F6SA InGaAlP Laser Diode 2003 Rev 0 ♦OVERVIEW QL65F6SA is a MOCVD grown 650 nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 10mW and low operating current for optoelectronic devices such as Optical Pick-up & Bar Code Reader. ♦APPLICATION - Optical Pick-up - Bar Code Reader - Laser Module ♦FEATURES - Visible Light Output: λp = 650 nm - Optical Power Output: 10 mW CW - Package Type : TO-18 (5.6 mmφ) - Built-in Photo Diode for Monitoring Laser Diode ♦ELECTRICAL CONNECTION Bottom View Pin Configuration ♦ABSOLUTE MAXIMUM RATING at Tc=25°C Items Symbols Values Unit P 10 mW V 2 V V 30 V Optical Output Power Laser Diode Reverse Voltage Photo Diode Reverse Voltage Operating Temperature Topr −10 ~ +60 °C Storage Temperature Tstg −40 ~ +85 °C ♦ELECTRICAL and OPTICAL CHARACTERISTICS at Tc=25°C Items Symbols Min. Typ. Max. Unit Condition Optical Output Power Po - 10 - mW - Threshold Current Ith - 40 50 mA - Operating Current Iop - 60 80 mA Po = 10 mW Operating Voltage Vop - 2.3 2.6 V Po = 10 mW Lasing Wavelength λp 645 655 660 nm Po = 10 mW θ 6 9 12 deg Po = 10 mW θ⊥ 24 28 35 deg Po = 10 mW ∆θ - - ±1.5 deg Po = 10 mW ∆θ ⊥ - - ±2.5 deg Po = 10 mW Monitor Current Im 0.1 0.2 0.5 mA Po = 10 mW Optical Distance ∆X, ∆Y, ∆Z - - ±60 µm Beam Divergence Beam Angle NOTICE : QL65F6SA to be operated on APC circuit. The above product specifications are subject to change without notice. ♦PACKAGE DIMENSION ROITHNER LASERTECHNIK, A-1040 Vienna, Austria, Schoenbrunner Strasse 7 Tel.: +43-1-586 52 43 - 0, Fax.: +43-1-586 52 43 44 e-mail: [email protected], http://www.roithner-laser.com