HRB0103B Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying ADE-208-491(Z) Rev 0 Apr. 1997 Features • Low forward voltage drop and suitable for high effifiency forward current. • CMPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRB0103B E2 CMPAK Outline 3 2 1 (Top View) 1 Cathode 2 Anode 3 Cathode Anode HRB0103B Absolute Maximum Ratings (Ta = 25°C) *1 Item Symbol Value Unit Repetitive peak reverse voltage VRRM 30 V Average rectified current I o*2 100 mA 3 A *3 Non-Repetitive peak forward surge current IFSM Junction temperature Tj 125 °C Storage temperature Tstg -55 to +150 °C Note: Note: Note: 1. Per one device 2. See Fig.5, Two device total 3. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.44 V I F = 100 mA Reverse current IR — — 50 µA VR = 30V 2 HRB0103B Main Characteristic 10 -2 10 -2 Pulse test Pulse test 10 Reverse current I R (A) Forward current I F (A) 10 -3 10 -4 10 10 -5 -6 10-7 10 -3 -4 10 10 -5 -6 10 -8 -9 10 -7 0.1 0 0.2 0.4 0.3 10 0 0.5 10 Forward voltage V F (V) Io is two device total 0.05 1.5 D=1/2 Unit: mm DC 0.04 0.03 0.02 Io 0 0.01 0 tp T D= tp 20 40 60 Fig3. Forward power dissipation 3.0 0.06 0.05 D=5/6 1.5 Unit: mm D=2/3 0 0.04 VR D=1/2 tp T 0.03 D= tp sin wave T 0.02 0.01 T 80 100 120 Average rectified current DC 0.8 0.07 0 0 20hx15wx0.8t 2.0 2.0 sin wave D=1/3 VR is two device total 0.08 Reverse power dissipation Pd (W) 0.8 3.0 Forward power dissipation Pd (W) D=1/6 0.06 50 Reverse voltage V R (V) 20hx15wx0.8t 0.07 40 Fig.2 Reverse current Vs. Reverse voltage Fig.1 Forward current Vs. Forward voltage 0.08 30 20 @ @Io @(mA) 0 5 10 15 20 25 30 Peak reverse voltage @ @VRM @(V) Vs. Average rectified current Fig4. Reverse power dissipation Vs. Peak reverse voltage 3 HRB0103B Main Characteristic Two device total 100 DC 80 D=1/6 D=1/3 60 20hx15wx0.8t 0.8 40 Io 0 2.0 20 0 3.0 Average rectified current @Io (mA) 120 1.5 0 25 Unit: mm 50 sin wave D=1/2 T VR=30V 75 100 125 150 Ambient temperature Ta ( °C) Fig.5 Average rectified current Vs. Ambient temperature 4 tp D= tp T HRB0103B Package Dimensions 0.1 0.3 +– 0.05 1.25 ± 0.1 3 E2 2 1 0.1 0.3 +– 0.05 0.65 0.2 1.3 ± 0.2 0.9 ± 0.1 0.1 0.3 +– 0.05 0.65 + 0.1 0.16 – 0.06 0 - 0.1 0.425 Laser Mark 2.1 ± 0.3 2.0 ± 0.2 0.425 Unit : mm Hitachi Code JEDEC Code EIAJ Code Weight (g) 1 Cathode 2 Anode 3 Cathode Anode CMPAK — SC-70 0.006 5 Cautions 1. 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