HRC0201A Silicon Schottky Barrier Diode for Rectifying ADE-208-1559 (Z) Rev.0 Dec. 2002 Features • Low forward voltage drop and suitable for high efficiency rectifying. • Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HRC0201A C3 UFP Pin Arrangement Cathode mark Mark 1 C3 2 1. Cathode 2. Anode HRC0201A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Value Unit Repetitive peak reverse voltage VRRM * 15 V Reverse voltage VR 15 V 1 Average rectified current IO * 200 mA Peak forward current 300 mA Non-Repetitive peak forward surge current IFM IFSM *2 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.4 to Fig.6, with polyimide board. 2. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Forward voltage VF — — 0.39 V IF = 200 mA Reverse current IR — — 50 µA VR = 6 V Capacitance C — 18 — pF VR = 1 V, f = 1 MHz Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board * Note: 1. Polyimide board 3.0 1.5 0.8 20h×15w×0.8t 1.5 Rev.0, Dec. 2002, page 2 of 6 Unit: mm Unit Test Condition 1 HRC0201A Main Characteristic 10–1 1.0 Pulse test Pulse test 10–1 10–2 10–2 Reverse current IR (A) Forward current IF (A) Ta = 75°C Ta = 25°C 10–3 10 –4 Ta = 75°C 10–4 Ta = 25°C 10–5 10–5 10–6 10–3 0 0.6 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 10–6 0 5 10 15 Reverse voltage VR (V) 20 Fig.2 Reverse current vs. Reverse voltage f = 1MHz Pulse test Capacitance C (pF) 100 10 1.0 0.1 10 1.0 Reverse voltage VR (V) 100 Fig.3 Capacitance vs. Reverse voltage Rev.0, Dec. 2002, page 3 of 6 HRC0201A Main Characteristic (cont) 1.4 0A t T Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0.15 D=1/6 t D=— T Tj = 25°C D=1/3 sin(θ=180˚) 0.10 D=1/2 DC 0.05 0 0 0.05 0.10 0.15 0.20 0.25 0.30 D=5/6 0V 1.2 t T 1.0 t D=— T D=2/3 Tj = 125°C 0.8 D=1/2 0.6 sin(q=180˚) 0.4 0.2 0 0 5 10 15 20 25 30 Forward current IF (A) Reverse voltage VR (V) Fig.4 Forward power dissipation vs. Forward current Fig.5 Reverse power dissipation vs. Reverse voltage 0.30 VR = VRRM/3 Tj = 125°C Rth(j-a) = 600°C/W Average rectified current IO (A) 0.25 sin(θ=180°) 0.20 DC 0.15 0.10 D=1/2 D=1/3 0.05 D=1/6 0 –25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.6 Average rectified current vs. Ambient temperature Rev.0, Dec. 2002, page 4 of 6 HRC0201A Package Dimensions As of July, 2002 1.2 ± 0.10 0.13 ± 0.05 1.6 ± 0.10 0.6 ± 0.10 0.3 ± 0.05 0.8 ± 0.10 Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) UFP — Conforms 0.0016 g Rev.0, Dec. 2002, page 5 of 6 HRC0201A Disclaimer 1. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 7.0 Rev.0, Dec. 2002, page 6 of 6