HRU0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-235G(Z) Rev 7 Jul. 1998 Features • Low forward voltage drop and suitable for high effifiency rectifying. • Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRU0302A Z URP Outline 1 Z Cathode mark Mark 2 1. Cathode 2. Anode HRU0302A Absolute Maximum Ratings (Ta = 25°C) Item Symbol *1 RRM Repetitive peak reverse voltage V Average rectified current I O*1 *2 Value Unit 20 V 300 mA 3 A Non-Repetitive peak forward surge current I FSM Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes 1. See from Fig.4 to Fig.6 Notes 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.40 V I F = 300 mA Reverse current IR — — 100 µA VR = 20V Capacitance C — 70 — pF VR = 0V, f = 1 MHz Thermal resistance Rth(j-a) — 440 — °C/W Polyimide board *1 Notes 1. Polyimide board 3.0 1.5 0.8 20hx15wx0.8t 1.5 2 Unit: mm HRU0302A Main Characteristic 10 10 -1 Pulse test Pulse test 1.0 (A) Reverse current I R (A) 10 Forward current IF Ta=75°C 10 -1 10 10 10 Ta=25°C -2 -3 0 0.2 0.4 0.6 0.8 1.0 -3 Ta=75°C 10 -4 Ta=25°C 10 -4 10 -5 -6 0 5 10 15 20 25 Reverse voltage V R (V) Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage 10 10 -2 Fig.2 Reverse current Vs. Reverse voltage 2 Capacitance C (pF) f=1MHz Pulse test 10 1.0 1.0 10 40 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HRU0302A Main Characteristic 0.20 0A 0.20 t D=1/6 T t Tj =25°C D= T\ D=1/3 Sin( ˘=180°) 0.15 D=1/2 DC 0.10 0.05 0 0.05 0.10 0.15 0.20 0.25 0.30 Fig4. Forward power dissipation @ @IF @(A) Vs. Forward current @Io (A) 0.40 Average rectified current 0V t 0.15 T t D= \ T D=5/6 D=2/3 Tj =125°C 0.10 D=1/2 Sin( ˘=180°) 0.05 0 0 Forward current VR=VRRM/2 Tj =125°C Rth(j-a)=450°C/W 0.30 DC D=1/2 Sin( ˘=180°) D=1/6 0.20 D=1/3 0.10 0 -25 0 25 50 75 100 125 Ambient temperature Ta ( °C) Fig.6 Average rectified current Vs. Ambient temperature 4 Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0.25 0 5 10 15 20 25 Reverse voltage @ @VR @(V) Fig5. Reverse power dissipation Vs. Reverse voltage HRU0302A Package Dimensions Unit : mm 1.7±0.15 2.5±0.15 1.25±0.15 1 2 0.3±0.15 Z Cathode Mark 0.9±0.15 0 ‘0.10 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) URP — — 0.004 5 HRU0302A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. 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Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 6