HRW0702A Silicon Schottky Barrier Diode for Rectifying ADE-208-109E(Z) Rev 5 Oct. 1997 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. Laser Mark Package Code HRW0702A S15 MPAK Outline 3 2 (Top View) 1 1 NC 2 Anode 3 Cathode HRW0702A Absolute Maximum Ratings (Ta = 25°C) Item Symbol *1 RRM Value Unit 20 V Repetitive peak reverse voltage V Forward current I F* 1 700 mA Non-Repetitive peak forward current I FM 1.4 A Non-Repetitive peak forward surge current I FSM *2 5 A Junction temperature Tj 125 °C Storage temperature Tstg -55 to +125 °C Notes 1. See from Fig.4 to Fig.6 Notes 2. 10msec sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.43 V I F = 700 mA Reverse current IR — — 200 µA VR = 20V Capacitance C — 120 — pF VR = 0V, f = 1 MHz Thermal resistance Rth(j-a) — 340 — °C/W Polyimide board *1 Notes 1. Polyimide board 3.0 1.5 1.5 1.5 2 0.8 20hx15wx0.8t Unit: mm HRW0702A Main Characteristic 10 10 -1 Pulse test Pulse test 1.0 Reverse current I R (A) Forward current IF (A) 10 Ta=75°C 10 -1 Ta=25°C 10 10 10 -2 -3 10 0 0.2 0.4 0.6 0.8 1.0 Ta=75°C -3 -4 Ta=25°C 10 -4 10 -5 -6 0 5 10 15 20 25 Reverse voltage V R (V) Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage 10 10 -2 Fig.2 Reverse current Vs. Reverse voltage 2 Capacitance C (pF) f=1MHz Pulse test 10 1.0 1.0 10 40 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HRW0702A Main Characteristic 0.5 0A t D=1/3 Sin( ˘=180°) T t Tj =25°C D= T\ 0.4 D=1/2 DC 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Vs. Forward current 0.8 @Io (A) t 2.0 T t D= \ T Tj =125°C D=5/6 D=2/3 1.5 D=1/2 1.0 Sin( ˘=180°) 0.5 VR=VRRM/2 Tj =125°C Rth(j-a)=340°C/W 0.6 DC 0.4 Sin( ˘=180°) 0.2 D=1/2 D=1/6 D=1/3 0 -25 0 25 50 0 5 10 15 20 25 Reverse voltage @ @VR @(V) @ @IF @(A) Fig4. Forward power dissipation Average rectified current 0V 0 0 Forward current 75 100 125 Ambient temperature Ta ( °C) Fig.6 Average rectified current Vs. Ambient temperature 4 2.5 D=1/6 Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0.6 Fig5. Reverse power dissipation Vs. Reverse voltage HRW0702A Package Dimensions 0.65 – 0.3 + 0.10 0.4 – 0.05 Laser Mark + 0.1 Unit : mm + 0.10 0.16 – 0.06 0.3 2.8 +– 0.1 + 0.2 – 0.6 2.8 2 Anode 3 Cathode + 0.2 1.9 1 NC 1.1 – 0.1 1 0.95 0 – 0.10 0.1 0.65 +– 0.3 2 0.95 0.3 S15 1.5 3 Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK(1) — SC-59A 0.011 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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