HRF22 Silicon Schottky Barrier Diode for Rectifying ADE-208-163D(Z) Rev 4 Jul. 1997 Features • • Good for high-frequency rectify. LRP structure ensures higher reliability. Ordering Information Type No. Laser Mark Package Code HRF22 22 LRP Outline 1 22 Cathode mark Mark 2 1. Cathode 2. Anode HRF22 Absolute Maximum Ratings (Ta = 25°C) Item Symbol *1 RRM Repetitive peak reverse voltage V Average rectified current I o*1 *2 Value Unit 40 V 1.0 A 20 A Non-Repetitive peak forward surge current I FSM Junction temperature Tj 125 °C Storage temperature Tstg -40 to +125 °C Note: Note: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.55 V I F = 1.0A Reverse current IR — — 1.0 mA VR = 40V ESD-Capability — 150 — — V C=200pF , R=0Ω , Both forward and reverse direction 1 pulse. Thermal resistance Rth(j-a) — — 108 °C/W Alumina board — — 157 Note: 1. Alumina board (25mm ~25mm ~0.64t 2.0mm 2.0mm Note: 4.2mm 2. Print board (25mm ~25mm ~1.64t 2.0mm 2.0mm 2 4.2mm Print board *2 *1 HRF22 Main Characteristic 10–3 1.0 10–4 10–2 Reverse current I R (A) Forward current I F (A) Pulse test Pulse test 10–1 10–3 –4 10 10–5 10–5 10–6 10–6 10–7 10–7 0 0.1 0.2 0.3 0.4 0.5 Forward voltage V F (V) 0 10 20 30 40 50 Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage Fig.1 Forward current Vs. Forward voltage f=1MHz Pulse test 3 Capacitance C (pF) 10 2 10 10 1.0 10 2 10 Reverse voltage V R (V) Fig.3 Capacitance Vs. Reverse voltage 3 HRF22 Main Characteristic 1.0 0V DC t 0.8 T t D= \ T Reverse power dissipation Pd (W) 0A Forward power dissipation Pd (W) 0.25 DC D=1/2 Sin D=1/3 0.6 D=1/6 0.4 0.2 t 0.20 T D=2/3 D=1/2 0.10 Sin 0.05 0 0.4 0 0.8 1.6 1.2 10 0 Fig.4 Forward p ower dissipation Vs. Forward current DC 1.2 1.6 VR=VRRM Tj=125°C Alumina Board 1.4 D=1/2 1.0 0.8 D=1/6 Sin 0.6 40 30 Fig.5 Reverse power dissipation Vs. Reverse voltage D=1/3 0.4 0.2 VR=VRRM Tj=125°C Print Board DC 1.4 Average forward current IO (A) 1.6 20 Reverse voltage V R(V) Forward current I F (A) Average forward current IO (A) D=5/6 0.15 0 1.2 D=1/2 1.0 0.8 D=1/3 0.6 D=1/6 0.4 Sin 0.2 0 0 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.6 Average forward current Vs. Ambient temperature 4 t D= \ T 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.7 Average forward current Vs. Ambient temperature HRF22 Package Dimensions Unit : mm 1 2.5 ± 0.3 22 1.5 ± 0.2 Cathode Mark 2 4.5 ± 0.2 5.0 ± 0.3 1.2 ± 0.3 1.2 ± 0.3 2.0 ± 0.3 0.2 1 Cathode 2 Anode Hitachi Code JEDEC Code EIAJ Code Weight (g) LRP — — 0.058 5 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. 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