MICROWAVE CORPORATION HMC137 v02.0304 GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Typical Applications Features The HMC137 is suitable for: Chip Integrates Directly into MIC Designs • Wireless Local Loop 20 dB of Carrier Suppression • LMDS & VSAT Direct Modulation in the 6 - 11 GHz Band • Pt. to Pt. Radios Functions also as a Phase Detector • Test Equipment Functional Diagram The HMC137 Bi-Phase Modulator is designed to phase-modulate an RF signal into reference and 180 degree states. Device input is at the RF port and output is at the LO port. The polarity of the bias current at the control port (IF port) defines the phase states. Excellent amplitude and phase balance provided by closely matched monolithic balun and diode circuits delivers 20 dB of carrier suppression in a tiny monolithic chip. The device also functions as a demodulator or phase comparator. As a demodulator, data emerges at the control port when a modulated signal at the RF port is compared to a reference signal at the LO port. As a phase comparator, the phase angle between two signals applied to the RF and LO ports is represented by an analog voltage at the control port. Except for carrier suppression, the data presented here was measured under static conditions in which a DC bias current (nominally 5 mA) is applied to the control port. 6 MODULATORS - CHIP General Description Electrical Specifications, TA = +25° C, 5 mA Bias Current Parameter Min. Frequency Band 9 Return Loss, RF and LO Ports Max. 6 - 11 Insertion Loss 2.5 Amplitude Balance Phase Balacne 6 - 10 Typ. Units GHz 11 3.0 dB dB 0.25 0.50 dB 10 15 deg Carrier Suppression (When driven with a 1 MHz square wave, 1.4 Vp-p) 15 20 dBc Input Power for 1 dB Compression 4 8 dBm Third Order Intercept, Input 10 15 dBm Second Order Intercept, Input 25 40 dBm Bias Current (Bias current forward biases internal Schottky diodes providing approximately 0.6 V at the control port). 2 5 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com mA HMC137 v02.0304 MICROWAVE CORPORATION GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz SUB-HARMONICALLY Amplitude PUMPEDBalance MIXER 17 - 25 GHz 0 2 -5 1 AMPLITUDE BALANCE (dB) -10 -15 -20 4 5 6 7 8 9 10 11 0 -1 -2 4 12 5 6 Phase Balance 8 9 10 11 12 6 Carrier Suppression * 15 CARRIER SUPPRESSION (dBc) 50 10 PHASE BALANCE (Deg) 7 FREQUENCY (GHz) FREQUENCY (GHz) 5 0 -5 -10 -15 4 5 6 7 8 9 10 11 40 30 20 10 0 12 6 7 FREQUENCY (GHz) 8 9 10 CARRIER FREQUENCY (GHz) Return Loss RETURN LOSS (dB) 0 11 12 MODULATORS - CHIP INSERTION LOSS (dB) GaAs MMIC Insertion Loss -5 -10 -15 -20 2 3 4 5 6 7 8 9 10 11 12 13 14 FREQUENCY (GHz) * (For 1.4 Vp-p Square Wave Modulation at 1 MHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 6 - 11 MICROWAVE CORPORATION HMC137 v02.0304 GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Compression vs Bias at 9 GHz 12 14 10 12 INPUT P1dB (dBm) INPUT P1dB (dBm) Compression vs Frequency * 8 6 4 2 10 8 6 4 2 0 0 6 7 8 9 10 11 0 12 1 2 FREQUENCY (GHz) 6 - 12 Third Order Intercept vs Frequency * 4 5 6 7 8 9 10 Third Order Intercept vs Bias at 9 GHz 25 25 20 20 INPUT IP3 (dBm) INPUT IP3 (dBm) MODULATORS - CHIP 6 3 BIAS CURRENT (mA) 15 10 5 15 10 5 0 0 6 7 8 9 10 11 CARRIER FREQUENCY (GHz) 12 0 1 2 3 4 5 6 7 BIAS CURRENT (mA) * (For 5 mA Bias Current) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 9 10 MICROWAVE CORPORATION HMC137 v02.0304 GaAs MMIC BI-PHASE MODULATOR, 6 - 11 GHz Suggested TTL Driver for a Bi-Phase Modulator +2.5 Vdc +5 Vdc MODULATOR I, Q PORTS .01 uF VCC VCC HC04 HCT04 *R 1 VA 0.6V TTL GND .01 uF 2.2K Notes 1. VAAlternates Between + 2.4 Vdc ± IA = 2.4 - 0.6 = ± 5 mA 360 Ohm IA HITTITE MODULATOR -2.5 Vdc 2. HCT04 and HC04 are QMOS HEX Inverters. 6 *R1 =300 to 620 ± 2% Select R1 To Supply ±3 to ±6 mA to the IF Port. Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BOND PAD SPACING IS .006” CENTER TO CENTER. 4. BACKSIDE METALIZATION: GOLD. MODULATORS - CHIP V Z = 2V GND 5. BACKSIDE METAL IS GROUND. 6. BOND PAD METALIZATION: GOLD. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 6 - 13