HITTITE HMC165S14

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HMC165S14
MICROWAVE CORPORATION
GaAS MMIC SP4T SWITCH DC TO 2.0 GHz
FEBRUARY 2001
V01.0101
Features
General Description
LOW INSERTION LOSS: 0.4dB
The HMC165S14 is a low-cost SP4T switch
in a 14-lead SOIC package for use in antenna diversity, switched filter banks, gain/
attenuation selection, and general channel
multiplexing applications. The switch can
control signals up to 2.5 GHz and is especially suited for 800-1000 MHz basestation
applications*. A 2:4 decoder is integrated
on the switch, requiring only 2 control lines
and a negative bias to select each RF path.
Switch outputs are reflective shorts when
"Off". The 2:4 decoder replaces 4 to 8
control lines normally required by GaAS
SP4T switches. See positive bias/TTL SP4T
HMC241QS16.
INTEGRATED 2:4 DECODER
14 LEAD SOIC PACKAGE
SMT
SP4T
SWITCHES
7
Guaranteed Performance
For 0/-5V Control and Vee = -5V in a 50 Ohm System, -40 to +85 deg C
Parameter
Frequency
Min.
Typ.
Max.
Units
0.3
0.5
1.0
0.6
0.8
1.3
dB
dB
dB
Inser tion Loss
DC - 0.5GHz
DC - 1.0GHz
DC - 2.0GHz
Isolation
DC -0.5GHz
DC - 1.0GHz
DC - 2.0GHz
35
28
20
39
32
24
dB
dB
dB
Return Loss
DC -1.0GHz
DC - 2.0GHz
16
8.5
20
11
dB
dB
Input Power for 1dB Compression
50 MHz
0.5 - 2.0GHz
22
24
dB m
Input Third Order Intercept
50 MHz
0.5 - 2.0GHz
35
42
dB m
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 2.0GHz
25
50
ns
ns
12 Elizabeth Drive, Chelmsford, MA 01824
7 - 22
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
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HMC165S14
MICROWAVE CORPORATION
HMC165S14 SP4T SWITCH DC TO 2.0 GHz
FEBRUARY 2001
V01.0101
Insertion Loss
Isolation
0
0
-10
ISOLATION (dB)
INSERTION LOSS (dB)
-0.5
-1
-1.5
-2
-20
-30
-40
-50
-2.5
-60
-3
0
0.5
1
1.5
2
FREQUENCY (GHz)
2.5
0
3
0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
7
SWITCHES
Return Loss
-10
RF COMMON
-20
SP4T
RETURN LOSS (dB)
0
RF1, RF2,
RF3, RF4
-30
0
0.5
1
1.5
2
2.5
SMT
-40
3
FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
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HMC165S14
MICROWAVE CORPORATION
HMC165S14 SP4T SWITCH DC TO 2.0 GHz
FEBRUARY 2001
V01.0101
Functional Diagram
GND
RF4
GND
RFC
GND
GND
RF1
PIN 1
2:4
DECODER
GND
SMT
SP4T
SWITCHES
7
RF3
Vee
B
A
Absolute Maximum Ratings
Bias Voltage Range (Por t Vee)
-7.0 Vdc
Control Voltage Range (A & B)
Vee -0.5V to +1.0 Vdc
Storage Temperature
-65 to +150 deg C
Operating Temperature
-40 to +85 deg C
Maximum Input Power
+27dBm (<500MHz)
+30dBm (>500MHz)
GND
Truth Table
Control Input
Bias Voltage & Current
A
B
H i gh
H i gh
R F1
Low
H i gh
R F2
H i gh
Low
R F3
Low
Low
R F4
State
Vee
(Vdc)
Iee (Typ.)
(mA)
Iee (Max.)
(mA)
-5.0
3.0
6.0
12 Elizabeth Drive, Chelmsford, MA 01824
Signal Path State
RFCOM to:
Control Voltages
Vee Range = -5.0 Vdc ± 10%
7 - 24
RF2
Phone: 978-250-3343
Bias Condition
Low
0 to -3 VDC @ 220uA Typ.
High
Vee +0.8 VDC @ 100uA Max.
Fax: 978-250-3373
Web Site: www.hittite.com
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HMC165S14
MICROWAVE CORPORATION
HMC165S14 SP4T SWITCH DC TO 2.0 GHz
FEBRUARY 2001
V01.0101
Outline
0.337/0.344
(8.55/8.75)
GND RF2
0.150/0.157
(3.81/4.00)
A
B
Vee
0.229/0.244
(5.82/6.20)
HMC165S14
GND RF1
GND RFC
GND
COUNTRY OF ORIGIN
RF3 GND
XXXXX
CCCC
PIN 14
YYWW
LOT NUMBER
DATE CODE
YY= YEAR
WW= WEEK
RF4 GND
PIN 1
PIN 1 (REF)
0.054/0.068
(1.37/1.73)
3 DEG/8 DEG
0.004/0.009
(0.10/0.23)
0.014/0.018
(0.36/0.46)
TYP
1)
2.
3.
0.016
(0.41) MIN TYP
MATERIAL:
A) PACKAGE BODY LOW STRESS INJECTION MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED
B) LEADFRAME MATERIAL: COPPER ALLOY
PLATING: LEAD-TIN SOLDER PLATE
DIMENSIONS ARE IN INCHES (MILLIMETERS) UNLESS OTHERWISE SPECIFIED TOL. ARE ±0.005(±0.13)
7
SWITCHES
0.050
(1.27)
TYP
0.007/0.009
(0.18/0.25) TYP
TTL Interface Circuit
Vcc
TTL Control A
To A
74HCT04 (1/6)
SP4T
5.1V
Zener
10K Vee
Ohm
SMT
-5 VDC
Vcc
TTL Control B
To B
5.1V
Zener
74HCT04 (1/6)
10K Vee
Ohm
-5 VDC
Note:
Control inputs A and B can be driven directly with TTL
logic with -5 Volts applied to the HCT logic gates (Vee) and to Vee (pin 10) of the RF switch.
12 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Web Site: www.hittite.com
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