'9 9 n ew ! HMC223MS8 MICROWAVE CORPORATION GaAS MMIC MSOP8 T/R SWITCH 4.5 - 6 GHz FEBRUARY 2001 V01.0300 Features General Description INDUSTRY FIRST LOW COST 4.5-6 GHz SWITCH The HMC223MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use in transmit-receive applications. The device can control signals from 4.5 to 6 GHz and is especially suited for 5.2 GHz UNII and 5.8 GHz ISM applications with only 1.2 dB loss. The design provides exceptional power handling performance; input P1dB = +33dBm at 5 Volt bias. RF1 or RF2 is a reflective short when "Off". On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. No DC blocking capacitors are required on RF I/O ports. HMC223MS8 is especially suited for PCMCIA wireless LAN applications. ULTRA SMALL PACKAGE: MSOP8 HIGH INPUT P1dB: +33 dBm SINGLE POSITIVE SUPPLY: +3 TO +8V SMT SPDT SWITCHES 7 Guaranteed Performance, Vdd = +5 Vdc, 50 Ohm System, -40 to +85 deg C Parameter Frequency Min. Typ. Insertion Loss 4.5 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz Isolation 4.5 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz 15 22 16 25 26 20 dB dB dB RF1 &RF2 4.5 - 6.0 GHz 5.1 - 5.9 GHz 4.5 - 6.0 GHz 5.1 - 5.9 GHz 10 11 10 12 13 15 13 16 dB dB dB dB Input Power for 1dB Compression 0/3V C ontrol 0/5V C ontrol 4.5 - 6.0 GHz 4.5 - 6.0 GHz 27 29 31 33 dBm dBm Input Third Order Intercept 0/3V C ontrol 0/5V C ontrol 4.5 - 6.0 GHz 4.5 - 6.0 GHz 30 32 34 36 dBm dBm tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF 4.5 - 6.0 GHz 10 25 nS nS RF Common Return Loss Switching Characteristics 12 Elizabeth Drive, Chelmsford, MA 01824 7 - 88 Phone: 978-250-3343 Fax: 978-250-3373 1.2 1.2 1.3 Max. Units 1.7 1.6 1.7 dB dB dB Web Site: www.hittite.com '9 9 ne w ! HMC223MS8 MICROWAVE CORPORATION HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz FEBRUARY 2001 V01.0300 Insertion Loss Isolation 0 0 -1 -10 ISOLATION (dB) INSERTION LOSS (dB) -0.5 -1.5 -2 -2.5 -3 -20 -30 -3.5 -4 -40 3 4 5 6 7 3 4 5 FREQUENCY (GHz) 6 7 FREQUENCY (GHz) 7 SWITCHES Return Loss 0 S22 -10 SPDT RETURN LOSS (dB) -5 -15 -20 -25 SMT S11 RFC -30 3 4 5 6 7 FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 89 '9 9 n ew ! HMC223MS8 MICROWAVE CORPORATION HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz FEBRUARY 2001 V01.0300 Truth Table Functional Diagram *Control Input Voltage Tolerances are ± 0.2 Vdc RF2 GND GND RF1 Bias Control Input * A B RF Bias Control Control Current Current Current Signal Path State Vdd (Vdc) A (Vdc) B (Vdc) Ivdd (µA) Ia (µA) Ib (µA) RF to RF1 RF to RF2 3 0 0 10 -5 -5 OFF OFF 3 0 Vdd 10 -10 0 ON OFF 3 Vdd 0 10 0 -10 OFF ON 5 0 0 45 -22 -23 OFF OFF 5 0 Vdd 45 -5 -40 ON OFF 5 Vdd 0 45 -40 -5 OFF ON Vdd Absolute Maximum Ratings Control Voltage Range (A & B) -0.2 to +Vdd Vdc Caution: Do not operate in 1dB compression at power levels above +33 dBm and do not 'hot switch' power levels greater than +23dBm (Vdd = +5Vdc). Storage Temperature -65 to +150 deg C DC blocks are not required at ports RFC, RF1 and RF2. Operating Temperature -40 to +85 deg C Bias Voltage Range (Vdd) 7 -0.2 to +12 Vdc Outline 0.116/0.120 (2.95/3.05) GND SWITCHES RF2 RF1 LOT NUMBER SPDT 0.116/0.120 (2.95/3.05) PIN 1 HMC 223 A XXXX YYWW 0.188/0.196 (4.78/4.98) DATE CODE YY= YEAR WW= WEEK B RF +Vdd PIN 1 (REF) 0.032/0.036 (0.81/0.91) SMT 0.038/0.042 (0.96/1.07) 0.005/0.007 (0.13/0.18) 0-5 DEG 0.0256 TYP (0.65) 0.012 TYP (0.30) 1) 2. 3. MATERIAL: A) PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED B) LEADFRAME MATERIAL: COPPER ALLOY PLATING: LEAD-TIN SOLDER PLATE DIMENSIONS ARE IN INCHES (MILLIMETERS) 12 Elizabeth Drive, Chelmsford, MA 01824 7 - 90 0.021 MIN TYP (0.53) Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com '9 9 ne w ! HMC223MS8 MICROWAVE CORPORATION HMC223MS8 MSOP8 T/R SWITCH 4.5 - 6 GHz FEBRUARY 2001 V01.0300 Typical Application Circuit RF2 RF1 GND A +V GND B Vdd +V R1 CTL CMOS R2 R3 CMOS RF Notes: SWITCHES 7 SPDT 1. Control inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface. 3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances. 5. DC Blocking capacitors are not required for each RF port. 6. Evaluation PCB available. SMT See Page 8 - 4 for Layout Guidelines Application Note. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 91