MICROWAVE CORPORATION HMC223MS8 v01.0300 GaAs MMIC T/R SWITCH 4.5 - 6.0 GHz Typical Applications Features The HMC223MS8 is ideal for: Industry First Low Cost 4.5 - 6 GHz Switch • MMDS & WirelessLAN Ultra Small Package: MSOP8 • Portable Wireless High Input P1dB: +33 dBm • UNII & HiperLAN Single Positive Supply: +3 to +8V • Wireless Local Loop Functional Diagram General Description The HMC223MS8 is a low-cost SPDT switch in an 8-lead MSOP package for use in transmit-receive applications. The device can control signals from 4.5 to 6 GHz and is especially suited for 5.2 GHz UNII and 5.8 GHz ISM applications with only 1.2 dB loss. The design provides exceptional power handling performance; input P1dB = +33dBm at 5 Volt bias. RF1 and RF2 are reflective shorts when “Off”. Onchip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. No DC blocking capacitors are required on RF I/O ports. SWITCHES - SMT 7 Electrical Specifications, TA = +25° C, Vdd = +5 Vdc, 50 Ohm System Parameter Frequency Typ. Max. Units 1.2 1.2 1.3 1.7 1.6 1.7 dB dB dB Inser tion Loss 4.5 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz Isolation 4.5 - 6.0 GHz 5.1 - 5.4 GHz 5.4 - 5.9 GHz 15 22 16 25 26 20 dB dB dB 4.5 - 6.0 GHz 5.1 - 5.9 GHz 4.5 - 6.0 GHz 5.1 - 5.9 GHz 10 11 10 12 13 15 13 16 dB dB dB dB 0/3V Control 0/5V Control 4.5 - 6.0 GHz 4.5 - 6.0 GHz 27 29 31 33 dBm dBm 0/3V Control 0/5V Control 4.5 - 6.0 GHz 4.5 - 6.0 GHz 30 32 34 36 dBm dBm 10 25 ns ns RF Common Return Loss RF1 & RF2 Input Power for 1dB Compression Input Third Order Intercept Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 7 - 94 Min. 4.5 - 6.0 GHz For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] HMC223MS8 v01.0300 MICROWAVE CORPORATION GaAs MMIC T/R SWITCH 4.5 - 6.0 GHz Insertion Loss Isolation 0 0 -10 ISOLATION (dB) -1 -1.5 -2 -2.5 -20 -30 -3 -3.5 -40 -4 4 5 6 3 7 4 5 6 7 FREQUENCY (GHz) FREQUENCY (GHz) Return Loss 0 7 -5 S22 -10 -15 -20 -25 S11 RFC -30 3 4 5 6 7 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] SWITCHES - SMT 3 RETURN LOSS (dB) INSERTION LOSS (dB) -0.5 7 - 95 MICROWAVE CORPORATION HMC223MS8 v01.0300 GaAs MMIC T/R SWITCH 4.5 - 6.0 GHz Truth Table Absolute Maximum Ratings *Control Input Voltage Tolerances are ± 0.2 Vdc. Control Input* Bias Bias Current Control Current Control Current Signal Path State Vdd (Vdc) A (Vdc) B (Vdc) ldd (uA) la (uA) lb (uA) RF to RF1 RF to RF2 3 0 0 10 -5 -5 OFF OFF 3 0 Vdd 10 -10 0 ON OFF 3 Vdd 0 10 0 -10 OFF ON 5 0 0 45 -22 -23 OFF OFF 5 0 Vdd 45 -5 -40 ON OFF 5 Vdd 0 45 -40 -5 OFF ON Bias Voltage Range (Vdd) -0.2 to +12 Vdc Control Voltage Range (A & B) -0.2 to Vdd Vdc Storage Temperature -65 to +150 deg C Operating Temperature -40 to +85 deg C Caution: Do not operate in 1dB compression at power levels above +33 dBm and do not “hot switch” power levels greater than +23 dBm (Vdd = +5Vdc). DC blocks are not required at ports RFC, RF1 and RF2. Outline Drawing SWITCHES - SMT 7 1. MATERIAL A. PACKAGE BODY: LOW STRESS INJECTION MOLDED PLASTIC, SILICA & SILICONE IMPREGNATED B. LEADFRAME MATERIAL: COPPER ALLOY 2. PLATING: LEAD-TIN SOLDER PLATE 3. DIMENSIONS ARE IN INCHES (MILLIMETERS) 7 - 96 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] MICROWAVE CORPORATION HMC223MS8 v01.0300 GaAs MMIC T/R SWITCH 4.5 - 6.0 GHz Typical Application Circuit RF2 RF1 GND A +V GND B Vdd +V CTL CMOS R2 R3 CMOS RF Notes: 1. Control Inputs A and B can be driven directly with CMOS logic (HC) with V of 3 to 8 Volts applied to the CMOS logic gates and to pin 4 of the RF switch. 2. Set V to 5 Volts and use HCT series logic to provide a TTL driver interface. 3. Highest RF signal power capability is achieved with V set to +10V. However, the switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 4. RF ByPass: Do not use RF bypass capacitors on Vdd, A or B ports. Resistors R1, R2, R3 = 100 Ohms should be placed close to the Vdd, A and B ports. Use resistor size 0402 to minimize parasitic inductances and capacitances. 5. DC Blocking capacitors are not required for each RF port. 6. Evaluation PCB available. See Section 8 for Layout Guidelines Application Note. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Visit us at www.hittite.com, or Email at [email protected] 7 SWITCHES - SMT R1 7 - 97