HMC264 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Typical Applications Features The HMC264 is ideal for: Integrated LO Amplifier: -4 dBm Input • Microwave Point to Point Radios Sub-Harmonically Pumped (x2) LO • LMDS High 2LO/RF Isolation: 40 dB • SATCOM Small Size: 0.97mm x 1.32mm Functional Diagram General Description The HMC264 chip is a sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 1.28mm2. The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two stage design with only -4dBm nominal drive requirement. All data is measured with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils). MIXERS - CHIP 5 Electrical Specifications, TA = +25° C, As a Function of LO Drive & Vdd Parameter IF = 1 GHz LO = 0 dBm & Vdd = +4V Min. Max. Min. Typ. Max. IF = 1 GHz LO = -4 dBm & Vdd = +3V Min. Typ. Units Max. Frequency Range, RF 24 - 32 20 - 30 22 - 29 GHz Frequency Range, LO 12 - 16 10 - 15 10.5 - 14.5 GHz Frequency Range, IF DC - 6 DC - 6 DC - 4 GHz Conversion Loss 10 13 10 12 9 11 dB Noise Figure (SSB) 10 13 10 12 9 11 dB 2LO to RF Isolation 29 35 29 40 18 22 ~ 30 dB 2LO to IF Isolation 32 40 29 40 ~ 50 25 30 dB IP3 (Input) 5 13 5 13 3 10 dBm 1 dB Gain Compression (Input) +3 +6 -3 0 ~ +4 -5 0 ~ +3 dBm 25 mA Supply Current (Idd) 5 - 50 Typ. IF = 1 GHz LO = -4 dBm & Vdd = +4V 28 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION HMC264 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Conversion Gain vs. Temperature @ LO = -4 dBm, Vdd = +4V Conversion Gain vs. Temperature @ LO = -4 dBm, Vdd = +3V 0 0 +25 C +25 C -5 CONVERSION GAIN (dB) -10 -15 +85 C -20 -5 +85 C -10 -15 -55 C -20 -25 -25 18 20 22 24 26 28 30 32 18 34 20 22 24 26 28 30 Conversion Gain vs. LO Drive @ Vdd = +4V 0 -5 -2dBm -10 -8dBm -15 -6dBm -4dBm -20 CONVERSION GAIN (dB) 0dBm CONVERSION GAIN (dB) 34 Conversion Gain vs. LO Drive @ Vdd = +3V 0 -4dBm -5 5 -2dBm -10 -15 -6dBm -20 -25 -25 18 20 22 24 26 28 30 32 18 34 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Isolation @ LO = -4 dBm, Vdd = +3V Isolation @ LO = -4 dBm, Vdd = +4V 10 10 0 0 LO/IF -10 LO/RF -20 RF/IF -30 -40 2LO/RF -50 LO/IF -10 ISOLATION (dB) ISOLATION (dB) 32 RF FREQUENCY (GHz) RF FREQUENCY (GHz) MIXERS - CHIP CONVERSION GAIN (dB) -55 C -20 -30 -40 2LO/RF -50 2LO/IF -60 2LO/IF -60 -70 RF/IF LO/RF -70 18 20 22 24 26 28 RF FREQUENCY (GHz) 30 32 34 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 51 MICROWAVE CORPORATION HMC264 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Input IP3 vs. LO Drive @ Vdd = +4V Input IP3 vs. LO Drive @ Vdd = +3V 20 THIRD ORDER INTERCEPT (dBm) THIRD ORDER INTERCEPT (dBm) 20 -2 dBm 15 10 5 -6 dBm -4 dBm 0 -5 -10 10 5 0 -6 dBm 20 22 24 26 28 30 32 34 18 20 22 RF FREQUENCY (GHz) Input IP3 vs. Temperature @ LO = -4 dBm, Vdd = +4V 26 28 30 32 34 Input IP3 vs. Temperature @ LO = -4 dBm, Vdd = +3V 20 THIRD ORDER INTERCEPT (dBm) 20 -55C 15 10 5 +85C +25C 0 -5 -55C 15 10 5 +25C +85C 0 -5 -10 18 20 22 24 26 28 30 32 18 34 20 22 Input IP2 vs. LO Drive @ Vdd = +4V SECOND ORDER INTERCEPT (dBm) -6 dBm 40 30 -4dBm 20 26 28 30 32 34 Input IP2 vs. LO Drive @ Vdd = +3V 60 50 24 RF FREQUENCY (GHz) RF FREQUENCY (GHz) SECOND ORDER INTERCEPT (dBm) 24 RF FREQUENCY (GHz) -10 -2dBm 10 0 60 -6 dBm 50 40 30 -2dBm 20 -4dBm 10 0 18 20 22 24 26 28 RF FREQUENCY (GHz) 5 - 52 -4 dBm -5 -10 18 THIRD ORDER INTERCEPT (dBm) MIXERS - CHIP 5 -2 dBm 15 30 32 34 18 20 22 24 26 28 30 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 32 34 MICROWAVE CORPORATION HMC264 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Input IP2 vs. Temperature @ LO = -4 dBm, Vdd = +3V +85C 50 40 30 +25C 20 -55C 10 0 60 50 +85C 40 30 -55C 20 +25C 10 0 18 20 22 24 26 28 30 32 34 18 20 22 RF FREQUENCY (GHz) 24 26 28 30 32 34 RF FREQUENCY (GHz) P1dB vs. Temperature @ LO = -4 dBm, Vdd = +4V P1dB vs. Temperature @ LO = -4 dBm, Vdd = +3V 7 7 6 6 +25 C 5 +25 C 5 -55 C 4 P1dB (dBm) P1dB (dBm) 4 3 2 1 +85 C 2 1 0 0 -1 -1 -2 -2 -3 -55 C 3 +85 C 5 MIXERS - CHIP 60 SECOND ORDER INTERCEPT (dBm) SECOND ORDER INTERCEPT (dBm) Input IP2 vs. Temperature @ LO = -4 dBm, Vdd = +4V -3 18 20 22 24 26 28 RF FREQUENCY (GHz) 30 32 34 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 53 HMC264 v01.0801 MICROWAVE CORPORATION GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Upconverter Performance Conversion Gain, LO = -4 dBm Return Loss @ LO = -4 dBm, Vdd = +4V IF Vdd=+4V -5 -10 -15 Vdd=+3V -20 -25 -5 -10 RF LO -15 -20 16 18 20 22 24 26 28 30 32 34 0 5 10 15 RF FREQUENCY (GHz) 20 25 30 40 MxN Spurious Outputs @ LO Drive = -4 dBm, Vdd = +4V nLO 0 mRF ±5 ±4 ±3 ±2 ±1 0 -22 -34 -15 +26 1 x -30 0 -3 -5 -10 -15 -2 -36 -1 -54 2 3 -20 -54 -74 -38 -66 -67 RF = 30 GHz @ -10 dBm LO = 13.5 GHz @ -4 dBm All values in dBc below the IF power level -25 0 1 2 3 4 5 6 7 8 9 10 IF FREQUENCY (GHz) 5 - 54 35 FREQUENCY (GHz) IF Bandwidth @ LO = -4 dBm, Vdd = +4V IF CONVERSION GAIN (dB) MIXERS - CHIP 5 0 RETURN LOSS (dB) CONVERSION GAIN (dB) 0 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com -10 MICROWAVE CORPORATION HMC264 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz Absolute Maximum Ratings RF / IF Input (Vdd = +4V) +13 dBm LO Drive (Vdd = +4V) +13 dBm Vdd +5.5 Vdc Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Outline Drawing (See Handling Mounting Bonding Note) MIXERS - CHIP 5 NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BOND PAD SPACING CENTER TO CENTER IS .006”. 5. BACKSIDE METALLIZATION: GOLD. 6. BOND PAD METALLIZATION: GOLD. 7. BACKSIDE METAL IS GROUND. 8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 55 MICROWAVE CORPORATION HMC264 v01.0801 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz MIC Assembly Techniques MIXERS - CHIP 5 Mounting & Bonding Techiniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. The photo in figure 3 shows a typical assembly for the HMC264 MMIC chip. 5 - 56 Figure 3: Typical HMC264 Assembly For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v01.0801 HMC264 GaAs MMIC SUB-HARMONICALLY PUMPED MIXER, 20 - 32 GHz GaAs Precautions MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 MIXERS - CHIP Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 5 - 57