HMC292 v02.1202 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Typical Applications Features The HMC292 is ideal for: Input IP3: +19 dBm • Microwave Point to Point Radios LO / RF Isolation: 36 dB • LMDS Passive: No DC Bias Required • SATCOM Small Size: 0.58 mm x 1.04 mm Functional Diagram General Description The HMC292 chip is a miniature passive GaAs MMIC double-balanced mixer which can be used as an upconverter or downconverter from 18 - 32 GHz in a small chip area of 0.66 mm2. Excellent isolations are provided by on-chip baluns, which require no external components and no DC bias. All data is measured with the chip in a 50 ohm test fixture connected via 0.076 mm (3 mil) ribbon bonds of minimal length <0.31 mm (<12 mils). MIXERS - CHIP 5 Electrical Specifications, TA = +25° C LO = +13 dBm LO = +13 dBm Parameter Units Min. 5 - 70 Typ. Max. Min. Typ. Max. Frequency Range, RF & LO 20 - 30 18 - 32 GHz Frequency Range, IF DC - 8 DC - 8 GHz Conversion Loss 7.5 9 8 10 dB Noise Figure (SSB) 7.5 9 8 10 dB LO to RF Isolation 31 38 30 36 dB LO to IF Isolation 33 40 30 40 dB RF to IF Isolation 20 25 17 25 dB IP3 (Input) 17 19 15 19 dB IP2 (Input) 45 50 42 50 dBm 1 dB Gain Compression (Input) 8 12 8 12 dBm For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC292 v02.1202 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Conversion Gain vs. Temperature @ LO = +13 dBm Isolation @ LO = +13 dBm 0 0 RF/IF -10 -5 ISOLATION (dB) CONVERSION GAIN (dB) +85 C -10 -55 C +25 C -20 -30 -40 -15 -50 LO/IF LO/RF -60 -20 20 25 30 15 35 20 35 0 0 +15 dBm +13 dBm -5 RETURN LOSS (dB) CONVERSION GAIN (dB) 30 RF & LO Return Loss @ LO = +13 dBm Conversion Gain vs. LO Drive -10 +10 dBm -15 -5 -10 -15 RF +8 dBm 5 LO -20 -20 15 20 25 30 10 35 20 30 40 FREQUENCY (GHz) FREQUENCY (GHz) Upconverter Performance Conversion Gain @ LO = +13 dBm IF Bandwidth @ LO = +13 dBm 0 0 CONVERSION GAIN (dB) IF CONVERSION GAIN & RETURN LOSS (dB) 25 FREQUENCY (GHz) FREQUENCY (GHz) MIXERS - CHIP 15 -5 Return Loss -10 Conversion Gain -15 -20 -5 -10 -15 -20 0 2 4 6 IF FREQUENCY (GHz) 8 10 15 20 25 30 35 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 71 HMC292 v02.1202 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Input IP3 vs. Temperature @ LO = +13 dBm Input IP3 vs. LO Drive 25 25 +85C +13 dBm 20 INPUT IP3 (dBm) INPUT IP3 (dBm) 20 15 10 +10 dBm 5 15 +25C 10 -55C 5 +8 dBm 0 0 15 20 25 30 15 35 20 25 30 35 FREQUENCY (GHz) FREQUENCY (GHz) Input IP2 vs. Temperature @ LO = +13 dBm Input IP2 vs. LO Drive 80 80 +10 dBm 70 70 +85C +13 dBm 60 INPUT IP2 (dBm) 60 INPUT IP2 (dBm) MIXERS - CHIP 5 -5 -5 50 40 30 +8 dBm 50 40 -55C 30 20 20 10 10 +25C 0 0 15 20 25 30 15 35 20 25 30 35 FREQUENCY (GHz) FREQUENCY (GHz) Input P1dB vs. Temperature @ LO = +13 dBm MxN Spurious Outputs 15 nLO +25 C INPUT P1dB 13 mRF 0 1 2 3 4 0 xx 11 1 17 0 39 70 77 76 3 93 69 86 4 >110 >110 >110 11 -55 C +85 C 9 2 7 5 15 20 25 FREQUENCY (GHz) 5 - 72 30 35 RF = 21 GHz @ -10 dBm LO = 22 GHz @ +13 dBm All values in dBc below the IF power level. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com HMC292 v02.1202 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz Absolute Maximum Ratings RF / IF Input +13 dBm LO Drive +27 dBm Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Outline Drawing NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. DIE THICKNESS IS .004”. 3. TYPICAL BOND PAD IS .004” SQUARE. 4. BACKSIDE METALLIZATION: GOLD. 5. BOND PAD METALLIZATION: GOLD. MIXERS - CHIP 5 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 - 73 HMC292 v02.1202 MICROWAVE CORPORATION GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz MMIC Assembly Techniques Ribbon Bond Ribbon Bond MIXERS - CHIP 5 5 - 74 Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Gold ribbon of 0.076 mm x 0.013 mm (3 mil x 0.5 mil) of minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on the RF ports. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v02.1202 MICROWAVE CORPORATION HMC292 GaAs MMIC DOUBLE-BALANCED MIXER, 18 - 32 GHz GaAs Precautions MMIC SUB-HARMONICALLY PUMPED MIXER 17 - 25 GHz Handling Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 4060 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 5 MIXERS - CHIP Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. 5 - 75