2SC1590 Silicon NPN Transistor RF Power Output The 2SC1590 is a silicon NPN epitaxial planer type transistor designed for 136-174MHz RF power amplifiers on VHF band mobile radio applications. BEC WINTransceiver Features: High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz) Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 15.2V, PO = 6W, f = 175MHz Application: 4 to 5 Watt Output Power Amplifier Applications in VHF Band Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Emitter Voltage (RBE = Infinity), VCEO Collector-Base Voltage, VCBO Emitter-Base Voltage, VEBO Collector Current, IC Collector Power Dissipation (TA = +25°C), PD Collector Power Dissipation (TC = +50°C), PD Operating Junction Temperature, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA 17V 35V 4V 12A 1.5W 12.5W +150°C -55° to +150°C 10°C/W 83°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 10mA, IE = 0 35 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = Infinity 17 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE = 5mA, IC = 0 4 - - V Collector Cutoff Current ICBO VCB = 25V IE = 0 - - 500 µA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 - - 500 µA DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 10 50 180 Power Output PO VCC = 13.5V, Pin = 600mW, f = 175MHz 6 7 - W 60 70 - % Collector Efficiency This document was created with Win2PDF available at http://www.daneprairie.com. The unregistered version of Win2PDF is for evaluation or non-commercial use only.