NTE480 Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: D Designed for UHF Commercial Equipment D 38W with Greater than 5.8dB Gain D Withstands 20:1 VSWR Min., All Phase Angles D Tuned Q Technology D Diffused Emitter Resistors Absolute Maximum Ratings: (TC = +25°C unless othrwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Maximum Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Total Device Dissipation (At +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W Electrical Characteristic: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 50mA, IB = 0, Note 1 16 – – V V(BR)CES IC = 15mA, VBE = 0, Note 1 36 – – V V(BR)EBO IE = 5mA, iC = 0 4 – – V mA Static Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICES VCE = 12.5V, VBE = 0 – – 5 DC Current Gain hFE VCE = 5V, IC = 1A 20 – – Note 1. Pulsed through 25mH indicator. Electrical Characteristic (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Output Power PO VCE = 12.5V, f = 470MHz 38 40 – W Power Gain PG VCE = 12.5V, f = 470MHz 5.8 – – dB Impedance Zs VCE = 12.5V, Pi = 10W, f = 470MHz – 2– j1.3 – Ω – 1.6– j1.8 – Ω – 95 – pF Zcl Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz .205 (5.18) E .215 (5.48) .122 (3.1) Dia B .405 (10.3) Min C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)