NTE NTE128P

NTE128P (NPN) & NTE129P (PNP)
Silicon Complementary Transistors
General Purpose Amp
Description:
The NTE128P (NPN) and NTE129P (PNP) are silicon complemedntary transistors designed for use
in general purpose power amplifier and switching applications.
Features:
D High VCE Ratings
D Exceptional Power Dissipation Capability
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current , IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Power Dissipation, PTOT
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.850W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147°C/W
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Collector–Emitter Breakdown Voltage
Symbol
Test Conditions
BVCEO IC = 10mA, IB = 0
Min
Typ
Max
Unit
80
–
–
V
Collector Cutoff Current
ICBO
VCB = 80V
–
–
100
nA
Emitter Cutoff Current
IEBO
VEB = 4V
–
–
100
nA
DC Current Gain
hFE
IC = 10mA, VCE = 2V
100
–
–
IC = 350mA, VCE = 2V
100
–
300
–
–
0.35
IC = 50mA
50
–
–
VCB = 10V, IE = 0, f = 1MHz
–
–
15
Collector–Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
VCE(sat) IC = 350mA
fT
Cob
V
pF
.200 (5.08)
.180 (4.57)
.100 (2.54)
E B C
.180
(4.57)
.594
(15.09)
.018 (0.46)
.015 (0.38)
3.050 (1.27)
.050 (1.27)
.050 (1.27)
.140
(3.55)
.090 (2.28) R