RMWB24001 24 GHz Buffer Amplifier MMIC General Description Features The RMWB24001 is a 3-stage GaAs MMIC amplifier designed as an 17 to 24 GHz Buffer Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWB24001 utilizes our 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of medium power amplifier applications. • • • • • 4 mil Substrate Small-signal Gain 25dB (typ.) Saturated Power Out 17dBm (typ.) Voltage Detector Included to Monitor Pout Chip size 2.5mm x 1.5mm x 100µm Device Absolute Ratings Symbol Vd Vg Vdg ID PIN TC TSTG RJC Parameter Positive DC Voltage (+4V Typical) Negative DC Voltage Simultaneous (Vd–Vg) Positive DC Current RF Input Power (from 50Ω source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside) ©2004 Fairchild Semiconductor Corporation Ratings +6 -2 8 110 +11 -30 to +85 -55 to +125 Units V V V mA dBm °C °C 148 °C/W RMWB24001 Rev. D RMWB24001 June 2004 Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain (Small Signal Pin = 10dBm) Gain Variation vs. Frequency Power Output Saturated: (Pin = +5dBm) Drain Current at Psat Power Added Efficiency (PAE): at Psat Input Return Loss (Pin = -10dBm) Output Return Loss (Pin = -10dBm) DC Detector Voltage at Pout = 17dBm Min 17 Typ Max 24 -0.2 15 2.0 17 80 15 12 12 1.0 13 14 18 19 Units GHz V dB dB dBm mA % dB dB V Note: 1: Typical range of gate voltage is -0.5 to 0V to set typical Idq of 70mA. Application Information CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. DRAIN SUPPLY Vd1 DRAIN SUPPLY Vd2 and Vd3 OUTPUT POWER DETECTOR VOLTAGE Vdet MMIC CHIP RF IN RF OUT GATE SUPPLY GROUND Vg (Back of Chip) Figure 1. Functional Block Diagram1 Note: 1: Detector delivers >0V DC into 3kΩ load resistor for > +17dBm output power. If output power level detection is not desired, do not make connection to detector bond pad. ©2004 Fairchild Semiconductor Corporation RMWB24001 Rev. D RMWB24001 Electrical Characteristics (At 25°C), 50Ω system, Vd = +4V, Quiescent Current Idq = 70mA 0.48 1.77 2.02 RMWB24001 0.00 0.11 2.38 2.50 1.50 1.38 1.38 0.975 0.82 0.715 0.665 0.56 0.405 0.12 0.00 0.00 0.11 1.14 2.38 2.50 Dimensions in millimeters Figure 2. Chip Layout and Bond Pad Locations Chip Size is 2.50mm x 1.50mm X 100µm. Back of chip is RF and DC Ground. Output Power Detector Voltage Vdet 3 kΩ 10,000 pF Drain Supply Vd=4 V 100 pF Bond Wires 100 pF 100 pF Bond Wires MMIC Chip RF IN RF OUT 100 pF Bond Wires Ground (Back of Chip) 10,000 pF Gate Supply Vg Note: Detector delivers > 0.1 V DC into 3 kΩ load resistor for > +17 dBm output power. If output power level detection is not desired, do not connect to detector bond pad. Figure 3. Recommended Application Schematic Circuit Diagram ©2004 Fairchild Semiconductor Corporation RMWB24001 Rev. D 3 kΩ 10,000 pF Die-Attach 80 Au/20 Sn RMWB24001 Output Power Detector Voltage Vdet Drain Supply Vd= 4 V 100 pF 100 pF 100 pF 5 mil Thick Alumina 50 ohms 5mil Thick Alumina 50 ohms RF Output RF Input 100pF 2 mil Gap 10,000pF L< 0.015" (4 Places) Gate Supply Vg Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Figure 4. Recommended Assembly Diagram ©2004 Fairchild Semiconductor Corporation RMWB24001 Rev. D CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 70mA. The following sequence of steps must be followed to properly test the amplifier: Step 5: After the bias condition is established, the RF input signal may now be applied at the appropriate frequency band. Step 1: Turn off RF input power. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg). Step 2: Connect the DC supply grounds to the ground of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4V to Vd. Typical Characteristics RMWB24001 24 GHz BA, Pout vs Pin Performance On-Wafer Measurements, Vd = 4 V, Idq = 70 mA 20 18 Output Power (dBm), Gain (dB) 16 14 12 24 GHz 10 21 GHz 8 17 GHz 6 4 2 0 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 Input Power (dBm) ©2004 Fairchild Semiconductor Corporation RMWB24001 Rev. D RMWB24001 Recommended Procedure for Biasing and Operation RMWB24001 Typical Characteristics (Continued) RMWB24001 24 GHz BA, Typical Small Signal Performance On-Wafer Measurements, Vd=4 V, Idq = 70 mA 0 -2 S11 (dB) -4 -6 -8 -10 -12 -14 17 18 19 20 21 22 23 24 23 24 Frequency (GHz) RMWB24001 24 GHz BA, Typical Small Signal Performance On-Wafer Measurements, Vd = 4 V, Idq = 70 mA 0 S22 (dB) -5 -10 -15 -20 -25 -30 17 18 19 20 21 22 Frequency (GHz) ©2004 Fairchild Semiconductor Corporation RMWB24001 Rev. 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A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11