ETC BPX48F

Silizium-Differential-Fotodiode
Silicon Differential Photodiode
BPX 48
BPX 48 F
BPX 48
BPX 48 F
Wesentliche Merkmale
Features
• Speziell geeignet für Anwendungen im Bereich
von 400 nm bis 1100 nm (BPX 48) und bei
920 nm (BPX 48 F)
• Hohe Fotoempfindlichkeit
• DIL-Plastikbauform mit hoher Packungsdichte
• Doppeldiode mit extrem hoher Gleichmäßigkeit
• Especially suitable for applications from
400 nm to 1100 nm (BPX 48) and of 920 nm
(BPX 48 F)
• High photosensitivity
• DIL plastic package with high packing density
• Double diode with extremely high
homogeneousness
Anwendungen
Application
•
•
•
•
•
•
•
•
•
•
Nachlaufsteuerung
Kantenführungen
Weg- bzw. Winkelabtastungen
Industrieelektronik
„Messen/Steuern/Regeln“
Typ
Type
Bestellnummer
Ordering Code
BPX 48
Q62702-P17-S1
BPX 48 F
Q62702-P305
2001-02-21
1
Follow-up control
Edge control
Path and angle scanning
Industrial electronics
For control and drive circuits
BPX 48, BPX 48 F
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
Top; Tstg
– 40 … + 80
°C
Löttemperatur (Lötstelle 2 mm vom Gehäuse
entfernt bei Lötzeit t ≤ 3 s)
Soldering temperature in 2 mm distance from
case bottom (t ≤ 3 s)
TS
230
°C
Sperrspannung
Reverse voltage
VR
10
V
Verlustleistung, TA = 25 °C
Total power dissipation
Ptot
50
mW
Kennwerte (TA = 25 °C) für jede Einzeldiode
Characteristics (TA = 25 °C) per single diode system
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
BPX 48
BPX 48 F
IP
24 (≥ 15)
–
µA
IP
–
7.5 (≥ 4.0)
µA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
λS max
900
920
nm
Spektraler Bereich der Fotoempfindlichkeit
λ
400 … 1150
750 … 1150
nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area
A
1.54
1.54
mm2
Abmessung der bestrahlungsempfindlichen
Fläche
Dimensions of radiant sensitive area
L×B
0.7 × 2.2
0.7 × 2.2
mm × mm
0.5
0.5
mm
Fotostrom
Photocurrent
VR = 5 V, Normlicht/standard light A,
T = 2856 K, EV = 1000 Ix
VR = 5 V, λ = 950 nm, Ee = 0.5 mW/cm2
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
Abstand Chipoberfläche zu Gehäuseoberfläche
Distance chip front to case surface
2001-02-21
L×W
H
2
BPX 48, BPX 48 F
Kennwerte (TA = 25 °C) für jede Einzeldiode
Characteristics (TA = 25 °C) per single diode system (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
BPX 48
BPX 48 F
Einheit
Unit
Halbwinkel
Half angle
ϕ
± 60
± 60
Grad
deg.
Dunkelstrom, VR = 10 V
Dark current
IR
10 (≤ 100)
10 (≤ 100)
nA
Sλ
Sλ
0.55
–
–
0.65
A/W
∆S
±5
±5
%
Spektrale Fotoempfindlichkeit
Spectral sensitivity
λ = 850 nm
λ = 950 nm
Max. Abweichung der Fotoempfindlichkeit der
Systeme vom Mittelwert
Max. deviation of the system spectral sensitivity
from the average
Quantenausbeute
Quantum yield
λ = 850 nm
λ = 950 nm
Electrons
Photon
η
η
0.8
–
–
0.95
Leerlaufspannung
Open-circuit voltage
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
VO
330 (≥ 280)
–
mV
VO
–
300 (≥ 280)
mV
Kurzschlußstrom
Short-circuit current
Ev = 1000 Ix, Normlicht/standard light A,
T = 2856 K
Ee = 0.5 mW/cm2, λ = 950 nm
ISC
24
–
µA
ISC
–
7
µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 20 µA
tr, tf
500
500
ns
Durchlaßspannung, IF = 40 mA, E = 0
Forward voltage
VF
1.3
1.3
V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance
C0
25
25
pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV
– 2.6
– 2.6
mV/K
2001-02-21
3
BPX 48, BPX 48 F
Kennwerte (TA = 25 °C) für jede Einzeldiode
Characteristics (TA = 25 °C) per single diode system (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
BPX 48
BPX 48 F
TCI
TCI
0.18
–
–
0.2
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V, λ = 950 nm
NEP
1.0 × 10– 13
1.0 × 10– 13
Nachweisgrenze, VR = 10 V, λ = 950 nm
Detection limit
D*
1.2 × 1012
1.2 × 1012
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
Normlicht/standard light A
λ = 950 nm
Directional Characteristics
Srel = f (ϕ)
40
30
20
10
ϕ
0
OHF01402
1.0
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
2001-02-21
0.8
0.6
0.4
0
20
40
60
80
4
100
120
Einheit
Unit
%/K
%/K
W
-----------Hz
cm × Hz
-------------------------W
BPX 48, BPX 48 F
Relative Spectral Sensitivity
BPX 48 Srel = f (λ)
Relative Spectral Sensitivity
BPX 48 F Srel = f (λ)
Photocurrent IP = f (Ev), VR = 5 V
Open-Circuit Voltage VO = f (Ev)
BPX 48
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit-Voltage VO = f (Ee)
BPX 48 F
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (VR), E = 0
Capacitance
C = f (VR), f = 1 MHz, E = 0
2001-02-21
Dark Current
IR = f (TA), VR = 10 V
5
BPX 48, BPX 48 F
Maßzeichnung
Package Outlines
0.8 (0.031)
0.6 (0.024)
0.5 (0.020)
0.3 (0.012)
Diode system
1.10 (0.043)
0.09 (0.004)
0...5˚
2.54 (0.100)
7.62 (0.300) spacing
0.7 (0.028)
0.5 (0.020)
cathode
2.45 (0.096)
1.85 (0.073)
2.25 (0.089)
0.4 (0.016)
0.3 (0.012)
0.25 (0.010)
0.8 (0.031)
3.75 (0.148)
3.0 (0.118)
6.6 (0.260)
6.3 (0.248)
0.6 (0.024)
3.5 (0.138)
7.4 (0.291)
4.05 (0.159)
2.2 (0.087)
1.9 (0.075)
7.8 (0.307)
anode
2.54 (0.100)
Radiant sensitive area 2.0 (0.079) x 0.67 (0.026)
GEOY6638
Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
2001-02-21
6