Silizium-Differential-Fotodiode Silicon Differential Photodiode BPX 48 BPX 48 F BPX 48 BPX 48 F Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (BPX 48) und bei 920 nm (BPX 48 F) • Hohe Fotoempfindlichkeit • DIL-Plastikbauform mit hoher Packungsdichte • Doppeldiode mit extrem hoher Gleichmäßigkeit • Especially suitable for applications from 400 nm to 1100 nm (BPX 48) and of 920 nm (BPX 48 F) • High photosensitivity • DIL plastic package with high packing density • Double diode with extremely high homogeneousness Anwendungen Application • • • • • • • • • • Nachlaufsteuerung Kantenführungen Weg- bzw. Winkelabtastungen Industrieelektronik „Messen/Steuern/Regeln“ Typ Type Bestellnummer Ordering Code BPX 48 Q62702-P17-S1 BPX 48 F Q62702-P305 2001-02-21 1 Follow-up control Edge control Path and angle scanning Industrial electronics For control and drive circuits BPX 48, BPX 48 F Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 80 °C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3 s) Soldering temperature in 2 mm distance from case bottom (t ≤ 3 s) TS 230 °C Sperrspannung Reverse voltage VR 10 V Verlustleistung, TA = 25 °C Total power dissipation Ptot 50 mW Kennwerte (TA = 25 °C) für jede Einzeldiode Characteristics (TA = 25 °C) per single diode system Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit BPX 48 BPX 48 F IP 24 (≥ 15) – µA IP – 7.5 (≥ 4.0) µA Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 900 920 nm Spektraler Bereich der Fotoempfindlichkeit λ 400 … 1150 750 … 1150 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 1.54 1.54 mm2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L×B 0.7 × 2.2 0.7 × 2.2 mm × mm 0.5 0.5 mm Fotostrom Photocurrent VR = 5 V, Normlicht/standard light A, T = 2856 K, EV = 1000 Ix VR = 5 V, λ = 950 nm, Ee = 0.5 mW/cm2 S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface 2001-02-21 L×W H 2 BPX 48, BPX 48 F Kennwerte (TA = 25 °C) für jede Einzeldiode Characteristics (TA = 25 °C) per single diode system (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value BPX 48 BPX 48 F Einheit Unit Halbwinkel Half angle ϕ ± 60 ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 10 (≤ 100) 10 (≤ 100) nA Sλ Sλ 0.55 – – 0.65 A/W ∆S ±5 ±5 % Spektrale Fotoempfindlichkeit Spectral sensitivity λ = 850 nm λ = 950 nm Max. Abweichung der Fotoempfindlichkeit der Systeme vom Mittelwert Max. deviation of the system spectral sensitivity from the average Quantenausbeute Quantum yield λ = 850 nm λ = 950 nm Electrons Photon η η 0.8 – – 0.95 Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, λ = 950 nm VO 330 (≥ 280) – mV VO – 300 (≥ 280) mV Kurzschlußstrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, λ = 950 nm ISC 24 – µA ISC – 7 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 kΩ; VR = 5 V; λ = 850 nm; Ip = 20 µA tr, tf 500 500 ns Durchlaßspannung, IF = 40 mA, E = 0 Forward voltage VF 1.3 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 25 25 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 – 2.6 mV/K 2001-02-21 3 BPX 48, BPX 48 F Kennwerte (TA = 25 °C) für jede Einzeldiode Characteristics (TA = 25 °C) per single diode system (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value BPX 48 BPX 48 F TCI TCI 0.18 – – 0.2 Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 950 nm NEP 1.0 × 10– 13 1.0 × 10– 13 Nachweisgrenze, VR = 10 V, λ = 950 nm Detection limit D* 1.2 × 1012 1.2 × 1012 Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A λ = 950 nm Directional Characteristics Srel = f (ϕ) 40 30 20 10 ϕ 0 OHF01402 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 1.0 2001-02-21 0.8 0.6 0.4 0 20 40 60 80 4 100 120 Einheit Unit %/K %/K W -----------Hz cm × Hz -------------------------W BPX 48, BPX 48 F Relative Spectral Sensitivity BPX 48 Srel = f (λ) Relative Spectral Sensitivity BPX 48 F Srel = f (λ) Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) BPX 48 Photocurrent IP = f (Ee), VR = 5 V Open-Circuit-Voltage VO = f (Ee) BPX 48 F Total Power Dissipation Ptot = f (TA) Dark Current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 2001-02-21 Dark Current IR = f (TA), VR = 10 V 5 BPX 48, BPX 48 F Maßzeichnung Package Outlines 0.8 (0.031) 0.6 (0.024) 0.5 (0.020) 0.3 (0.012) Diode system 1.10 (0.043) 0.09 (0.004) 0...5˚ 2.54 (0.100) 7.62 (0.300) spacing 0.7 (0.028) 0.5 (0.020) cathode 2.45 (0.096) 1.85 (0.073) 2.25 (0.089) 0.4 (0.016) 0.3 (0.012) 0.25 (0.010) 0.8 (0.031) 3.75 (0.148) 3.0 (0.118) 6.6 (0.260) 6.3 (0.248) 0.6 (0.024) 3.5 (0.138) 7.4 (0.291) 4.05 (0.159) 2.2 (0.087) 1.9 (0.075) 7.8 (0.307) anode 2.54 (0.100) Radiant sensitive area 2.0 (0.079) x 0.67 (0.026) GEOY6638 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-21 6