Gabellichtschranke Slotted Interrupter SFH 9310 Wesentliche Merkmale Features • Kompaktes Gehäuse • GaAs-IR-Sendediode (950 nm) • Si-Fototransistor mit Tageslichtsperrfilter • Compact type • GaAs infrared emitter (950 nm) • Silicon phototransistor detector with daylight-cutoff filter Anwendungen Applications • Geschwindigkeitsüberwachung • Motorsteuerung • Überwachung des Papiervorschubs in Druckern, Kopier- und Faxgeräten • Speicherlaufwerke • Steuerung des Druckkopfes in Druckern • Münzdetektion • Optoelektronische Schalter • Speed control • Motor control • Monitoring of paper feed in printers, copiers, facsimiles • Disk drives • Control of print head in printers • Coin detection • Optoelectronic switches Typ Type Bestellnummer Ordering Code Gehäuse Package SFH 9310 Q62702-P5214 Schwarzes Polykarbonat Plastikgehäuse, Anschlüsse im 2.54-mm Raster, Senderseite durch Buchstaben „E“, Empfängerseite durch Buchstaben „S“ gekennzeichnet, Kathode / Transistoremitter durch schräge Kante gekennzeichnet. Black polycarbonate plastic material housing, solder tabs 2.54-mm (1/10”) spacing, emitter side marked with letter “E”, sensor side marked with letter “S”, cathode / emitter of transistor marked with edge at an angle. 2001-02-22 1 SFH 9310 Grenzwerte TA = 25 °C Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Sperrspannung Reverse voltage VR 5 V Durchlaßstrom Forward current IF (DC) 60 mA Verlustleistung Power dissipation Ptot 100 mW Wärmewiderstand Thermal resistance RthJA 280 K/W Kollektor-Emitter-Spannung Collector-emitter voltage VCE 30 V Kollektor-Emitter-Spannung, (t ≤ 2 min) Collector-emitter voltage, (t ≤ 2 min) VCE 70 Emitter-Kollektor-Spannung Emitter-collector voltage VEC 7 Kollektorstrom Collector current IC 50 mA Verlustleistung Total power dissipation Ptot 150 mW Wärmewiderstand Thermal resistance RthJA 280 K/W Lagertemperatur Storage temperature range Tstg – 40 … + 85 °C Betriebstemperatur Operating temperature range Top – 40 … + 85 Elektrostatische Entladung Electrostatic discharge ESD 2 Sender (GaAs-Diode) Emitter (GaAs Diode) Empfänger (Si-Fototransistor) Detector (Silicon Phototransistor) Gabellichtschranke Slotted Interrupter 2001-02-22 2 kV SFH 9310 Kennwerte TA = 25 °C Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength of peak emission λpeak 950 nm Durchlaβspannung Forward voltage IF = 20 mA, tp = 20 ms VF 1.2 (≤ 1.4) V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1) µA Kapazität Capacitance VR = 0 V, f = 1 MHz C0 16 pF Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 920 nm Spectr. Bereich der Fotoempfindlichkeit Spectral range of sensitivity S = 10% of Smax λ 840 … 1080 nm Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 6.5 pF Dunkelstrom Dark current VCE = 20 V ICEO 2 (≤ 50) nA Sender (GaAs-Diode) Emitter (GaAs Diode) Empfänger (Si-Fototransistor) Detector (Silicon Phototransistor) 2001-02-22 3 SFH 9310 Kennwerte TA = 25 °C Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kollektor-Emitterstrom Collector-emitter current IF = 20 mA; VCE = 5 V ICE min. ICE typ. > 0.7 mA Kollektor-Emitter-Sättigungsspannung Collector-emitter-saturation voltage IF = 20 mA; IC = 0.2 mA VCE sat ≤ 0.4 V Anstiegs- und Abfallzeit Rise and fall time VCC = 5 V, IC = 1 mA, RL = 1 kΩ tr tf 13 17 µs µs Gabellichtschranke Slotted interrupter 2001-02-22 4 SFH 9310 Forward Current IF = f (VF) Single pulse, tp = 20 µs OHF00367 10 4 mA ΙF Max. Permissible Forward Current IF = f (TA) OHF00372 90 70 10 10 2 R thJA = 280 K/W 2 OHF00380 10 3 nA Ι CEO Ι F mA 10 3 Dark Current ICEO = f (TA) VCE = 20 V, E = 0 60 50 10 1 10 1 40 10 0 30 10 0 20 10 -1 10 10 -2 0 0.5 1 1.5 2 2.5 3 V VF 4 0 0 20 40 60 Total Power Dissipation for Emitter and Detector Ptot = f (TA) OHF00410 160 P tot Detector 140 120 Emitter 100 80 60 40 20 0 0 20 2001-02-22 40 60 80 ˚C 100 TA 5 80 C TA 120 10 -1 0 20 40 60 80 ˚C 100 TA SFH 9310 Maßzeichnung Package Outlines 2 1 3 4 14.4 (0.567) 4.8 (0.189) 3.5 (0.138) 2.5 (0.098) 5.8 (0.228) 7.8 (0.307) 10.1 (0.398) 0.3 (0.012) 10.5 (0.413) 10.5 (0.413) 0.5 (0.020) 2.34 (0.092) 8.0 (0.315) 2.74 (0.108) Marking this side 0.6 (0.024) 0.4 (0.016) 2.54 (0.100) 2.0 (0.079) 10.1 (0.398) Emitter 1 Circuitry 4 2 Sensor 3 GPXY6010 Maße werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). 2001-02-22 6 7.7 (0.303) 6.2 (0.244) 0.6 (0.024) 0.4 (0.016) Optical axis 14.0 (0.551) 5.2 (0.205) SFH 9310 Löthinweise Soldering Conditions Bauform Type SFH 9310 Tauch-, Schwalllötung Dip, Wave Soldering Reflowlötung Reflow Soldering Kolbenlötung Iron Soldering Peak Temp. (solderbath) Max. Time in Peak Zone Peak Temp. (package temp.) Max. Time in Peak Zone (Iron temp.) 260 °C 10 s n. a. – 300 °C < 5 s Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg © All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 7