ASG101 DC-3000 MHz Features Description ·SiGe Technology ·22 dB Gain at 900 MHz ·+18 dBm P1dB ·+31 dBm Output IP3 ·3.0 dB Noise Figure ·Single +4.5 V Supply ·SOT-89 Surface Mount Package The ASG101 is designed for high linearity, high SiGe HBT Amplifier gain, and low noise over a wide range of frequency, being suitable for use in both receiver and transmitter of wireless and wireline telecommunication systems. The product is manufactured using a state-of-the-art SiGe HBT process of the company's own, making it cost-effective and highly reliable. The amplifiers are available in Package Style: SOT-89 a low cost SOT-89 package completing stringent DC and RF tests. Specifications 1) Parameters Units Frequency Range Gain Input VSWR Output VSWR Output IP3 Min. Typ. 250 - 2500 dB 22 ·CDMA, GSM, W-CDMA, PCS - 1.5 ·PA Driver Amplifier 1.5 dBm 28 dB 3.0 Output P1dB dBm 18 Supply Current mA Supply Voltage V 4.5 °C/W 99.6 4) ·Gain Block 31 Noise Figure Thermal Resistance, Rth Applications MHz - 2) Max. 40 33 ·CATV Amplifier ·IF Amplifier 55 75 1) Measurement conditions are as follows: T = 25°C, Vs = 4.5 V, Freq. = 900 MHz, 50 ohm system. 2) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 3) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. 4) The thermal resistance was determined at a DC power of 0.243 W (VCC=4.5 V, IC=54 mA) with RF signal and a lead temperature of 90.3 °C. More Information Absolute Maximum Ratings Parameters Rating Remarks Operating Case Temperature -40 to + 85°C Storage Temperature -40 to + 150°C Supply Voltage 6V Input RF Power (continuous) +6 dB above Input P1dB Website: www.asb.co.kr E-mail: [email protected] Tel: (82) 42-528-7220 Fax: (82) 42-528-7222 ASB Inc., 4th Fl. Venture Town Bldg., 367-17 Goijeong-Dong, Seo-Gu, Daejon 302-716, Korea Application Note Application circuit for 900 MHz Application circuit for 2 GHz Ordering Information Part Number ASG101 Description High linearity medium power amplifier (Available in tape and reel) EB-ASG101-900 Fully assembled evaluation kit (900 MHz) EB-ASG101-2000 Fully assembled evaluation kit (2000 MHz) 1/6 www.ASB.co.kr March. 2004 ASG101 Outline Drawing (Unit: mm) 3 a 2 2 1 Pin Description Function Pin No. Input 1 Ground 2 Output 3 Land Pattern Mounting Configuration (Unit: mm) Note: 1. The number and size of ground via holes in a circuit board is critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of lead pin 2 for better RF and thermal performance, as shown in the drawing at the left side. 2/6 www.ASB.co.kr March. 2004 ASG101 Application Circuit: 900 MHz Schematic Typical Performance Frequency Magnitude S21 22 dB Magnitude S11 1) -16 dB Magnitude S22 1) -19 dB Output P1dB 18 dBm 2) 31 dBm Output IP3 C4= C5= C6= 100 pF 1000 pF 1 µF Vs=4.5V 900 MHz Noise Figure 3.0 dB Supply Voltage 4.5 V Current 55 mA R1=10 kΩ RF IN L1=22 nH RF OUT C1=6 pF 50 Ω 50 Ω ASG101 5.5 mm L2=10nH 4.5 mm C3=100pF C2=5.6 pF 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Gain vs. Temperature 28 Frequency = 900MHz 26 24 22 20 18 16 -60 -40 -20 0 20 40 60 80 100 S-parameters 0 0 -5 -15 -20 -15 -20 -25 -25 -30 -30 -35 -35 600 700 800 900 1000 Frequency (MHz) 1100 +85 ΒC +25 ΒC -40 ΒC -10 S12 (dB) S11 (dB) -10 3/6 -5 + 85 ΒC + 25 ΒC - 40 ΒC 1200 600 700 800 900 1000 1100 1200 Frequency (MHz) www.ASB.co.kr March. 2004 ASG101 0 35 + 85 ΒC + 25 ΒC - 40 ΒC -5 + 85 ΒC + 25 ΒC - 40 ΒC 30 -10 -15 25 -20 20 -25 -30 15 -35 10 600 700 800 900 1000 1100 1200 600 700 800 900 1000 1100 1200 Output P1 vs. Frequency 26 Output P1dB (dBm) 24 22 20 18 16 + 85ΒC + 25ΒC - 40ΒC 14 12 10 800 850 900 950 1000 Frequency (MHz) Output IP3 vs. Frequency (Pout per tone = 5 dBm) Output IP3 vs. Tone Power 50 50 40 40 35 35 30 30 25 25 800 4/6 820 840 860 880 900 920 Frequency = 900 MHz 45 + 85ΒC + 25ΒC - 40ΒC 45 940 2 3 4 5 + 85ΒC + 25ΒC - 40ΒC 6 7 www.ASB.co.kr 8 March. 2004 9 ASG101 Application Circuit: 2000 MHz Schematic Typical Performance Frequency 2000 MHz Magnitude S21 15 dB Magnitude S11 1) -20 dB Magnitude S22 1) -17 dB Output P1dB 18 dBm 2) 31 dBm Output IP3 C4= C5= C6= 100 pF 1000 pF 1 µF Vs=4.5V Noise Figure 4.0 dB Supply Voltage 4.5 V Current 55 mA L1=22 nH R1=10 kΩ RF IN RF OUT C1=2 pF 50 Ω 5.5 mm L2=22nH 50 Ω ASG101 4.5 mm C3=100pF C2=1.5 pF 1) S11 & S22 can be improved, at a specific frequency, by moving an input shunt capacitor (C2) along an input transmission line. 2) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1 MHz. Board Layout (FR4, 40x40 mm2, 0.8T) Gain vs. Temperature 20 18 Frequency = 2GHz 16 14 12 10 -60 -40 -20 0 20 40 60 80 100 0 -5 -5 -10 -10 -15 -15 -20 + 85 ΒC + 25 ΒC - 40 ΒC -25 -30 -25 -30 -35 -40 -40 1700 1800 1900 2000 2100 Frequency (MHz) 2200 2300 + 85 ΒC + 25 ΒC - 40 ΒC -20 -35 -45 1600 5/6 S12 (dB) S11 (dB) S-parameters 0 2400 -45 1600 1700 1800 1900 2000 2100 2200 2300 Frequency (MHz) www.ASB.co.kr March. 2004 2400 ASG101 0 26 -5 24 + 85 ΒC + 25 ΒC - 40 ΒC 22 -10 20 -15 18 -20 16 -25 14 -30 12 -35 10 -40 8 1600 1700 1800 1900 2000 2100 2200 2300 2400 + 85 ΒC + 25 ΒC - 40 ΒC -45 1600 1700 1800 1900 2000 2100 2200 2300 2400 Output P1 vs. Frequency 26 + 85ΒC + 25ΒC - 40ΒC 24 22 20 18 16 14 1800 1850 1900 1950 2000 2050 2100 Output IP3 vs. Frequency (Pout per tone = 5 dBm) Output IP3 vs. Tone Power 50 50 + 85ΒC + 25ΒC - 40ΒC 45 40 40 35 35 30 30 25 1800 6/6 + 85ΒC + 25ΒC - 40ΒC 45 25 1850 1900 1950 2000 2050 2100 0 1 2 3 4 5 www.ASB.co.kr 6 7 March. 2004 8