AGILENT INA

2.4 GHz Low Noise Silicon MMIC
Amplifier
Technical Data
INA-51063
Features
• Ultra-Miniature Package
• Internally Biased, Single 5 V
Supply (12 mA)
• 20.5 dB Gain
• 3 dB NF
• Unconditionally Stable
Applications
Pin Connections and
Package Marking
GND 1
GND 2
6 OUTPUT
51
• Amplifier for Cellular,
Cordless, Special Mobile
Radio, PCS, ISM, Wireless
LAN, DBS, TVRO, and TV
Tuner Applications
Surface Mount SOT-363
(SC-70) Package
INPUT 3
5 GND
4 VCC
Note: Package marking provides
orientation and identification.
Equivalent Circuit (Simplified)
VCC
Description
Hewlett-Packard’s INA-51063 is a
Silicon monolithic amplifier that
offers excellent gain and noise
figure for applications to 2.4 GHz.
Packaged in an ultra-miniature
SOT-363 package, it requires half
the board space of a SOT-143
package.
The INA-51063 uses a topology
which is internally biased,
eliminating the need for external
components and providing
decreased sensitivity to ground
inductance.
The INA-51063 is fabricated using
HP’s 30 GHz fMAX ISOSATTM
Silicon bipolar process which
uses nitride self-alignment submicrometer lithography, trench
isolation, ion implantation, gold
metallization, and polyimide
intermetal dielectric and scratch
protection to achieve superior
performance, uniformity, and
reliability.
RF
OUTPUT
RF
INPUT
GROUND
6-151
5965-9680E
Absolute Maximum Ratings
Symbol
Parameter
Units
VCC
Supply Voltage, to ground
Pin
CW RF Input Power
Tj
TSTG
Absolute
Maximum[1]
Thermal Resistance[2]:
θjc = 200°C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. TC = 25°C (TC is defined to be the
temperature at the package pins where
contact is made to the circuit board)
V
12
dBm
+13
Junction Temperature
°C
150
Storage Temperature
°C
-65 to 150
INA-51063 Electrical Specifications[3], TC = 25°C, ZO = 50 Ω,VCC = 5 V
Symbol
Gp
NF
P1dB
IP3
VSWR
Icc
ιd
Parameters and Test Conditions
Power Gain (|S21|2)
f = 1500 MHz
Noise Figure
f = 1500 MHz
Output Power at 1 dB Gain Compression
f = 1500 MHz
Third Order Intercept Point
f = 1500 MHz
Input VSWR
f = 1500 MHz
Output VSWR
f = 1500 MHz
Device Current
Group Delay
f = 1500 MHz
Units
dB
dB
dBm
dBm
Min.
18
mA
ps
Typ.
20.5
3
-2.5
+6
1.3
1.8
12
240
Max.
14
INA-51063 Typical Scattering Parameters[3], TC = 25°C, ZO = 50 Ω,VCC = 5.0 V
Freq.
GHz
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
3.00
3.50
4.00
S11
Mag
0.17
0.17
0.16
0.16
0.14
0.13
0.12
0.10
0.08
0.07
0.07
0.07
0.08
0.10
0.12
0.14
0.17
0.19
0.22
0.24
0.26
0.28
0.30
0.32
0.33
0.35
0.41
0.45
0.50
Ang
177
175
170
166
162
159
158
158
164
172
-174
-156
-142
-135
-131
-131
-132
-134
-135
-139
-142
-145
-148
-151
-154
-157
-169
-179
172
dB
20.8
20.8
20.8
20.7
20.8
20.8
20.8
20.9
20.9
20.9
20.9
20.9
20.9
20.9
20.8
20.7
20.6
20.4
20.1
19.8
19.4
19.0
18.5
18.0
17.4
16.9
13.8
10.8
8.3
S21
Mag
10.94
10.95
10.94
10.89
10.94
10.96
11.00
11.06
11.06
11.10
11.10
11.14
11.11
11.08
11.01
10.88
10.71
10.45
10.16
9.78
9.37
8.90
8.42
7.96
7.45
6.98
4.89
3.48
2.59
Ang
-4
-7
-14
-21
-28
-35
-42
-49
-57
-64
-72
-80
-88
-96
-105
-113
-122
-131
-139
-148
-157
-165
-174
179
171
164
133
108
88
dB
-30.9
-30.8
-30.9
-31.0
-31.2
-31.3
-31.5
-31.6
-31.9
-32.1
-32.5
-32.7
-33.2
-33.5
-33.9
-34.6
-35.2
-36.0
-36.8
-37.8
-39.1
-40.6
-42.2
-44.3
-46.7
-48.9
-39.0
-31.9
-26.9
Note:
3. Reference plane per Figure 9 in Applications Information section.
6-152
S12
Mag
0.029
0.029
0.028
0.028
0.028
0.027
0.027
0.026
0.026
0.025
0.024
0.023
0.022
0.021
0.020
0.019
0.017
0.016
0.014
0.013
0.011
0.009
0.008
0.006
0.005
0.004
0.011
0.025
0.045
Ang
-1
-2
-4
-5
-7
-9
-10
-12
-14
-15
-17
-18
-21
-23
-25
-28
-30
-33
-36
-39
-42
-47
-53
-63
-79
-108
163
146
132
Mag
0.23
0.23
0.23
0.23
0.24
0.24
0.24
0.24
0.25
0.26
0.26
0.27
0.27
0.28
0.28
0.28
0.28
0.28
0.27
0.27
0.25
0.24
0.22
0.21
0.20
0.18
0.10
0.03
0.05
S22
Ang
-5
-8
-16
-25
-33
-43
-52
-61
-69
-77
-85
-94
-103
-113
-122
-131
-140
-150
-159
-168
-177
175
166
158
150
143
115
123
-132
K
Factor
1.65
1.65
1.70
1.70
1.69
1.74
1.74
1.79
1.78
1.83
1.89
1.95
2.02
2.10
2.19
2.31
2.57
2.77
3.20
3.53
4.32
5.49
6.49
9.03
11.51
15.20
7.64
4.61
3.29
INA-51063 Typical Performance, TC = 25°C, ZO = 50 Ω, VCC = 5 V
5.5 V
20
5.0 V
18
4.5 V
NOISE FIGURE (dB)
GAIN (dB)
22
16
14
12
10
0.05 0.45
0.85
1.25
1.65
2.05
5.0
4
4.5
2
5.5 V
5.0 V
4.0
3.5
4.5 V
3.0
5.5 V
2.5
-2 4.5 V
-4
2.0
-6
1.5
-8
1.0
0.1
2.45
0
5.0 V
P 1 dB (dBm)
24
0.5
0.9
1.3
2.1
1.7
-10
0.1
2.5
0.9
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. Gain vs. Frequency and
Voltage.
1.5
2.7
2.1
FREQUENCY (GHz)
Figure 2. Noise Figure vs. Frequency
and Voltage.
Figure 3. Output Power for 1 dB Gain
Compression vs. Frequency and
Voltage.
24
5.0
6
22
4.5
4
4.0
2
-40 °C
-40 °C
16
14
3.5
+25 °C
+85 °C
3.0
2.5
-40 °C
2.0
1.5
10
0.1
1.0
0.1 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
0.6
1.2
1.8
2.4
3.0
25
2.0
20
+85 °C
VSWR OUT
ICC (mA)
1.8
1.6
15
+25 °C
10
-40 °C
1.4
VSWR IN
5
1.2
1.0
0.05 0.45
0.85
1.25
1.65
2.05
2.45
FREQUENCY (GHz)
Figure 7. Input and Output VSWR vs.
Frequency.
0
-4
0
1
2
3
4
5
6
7
VCC (V)
Figure 8. Supply Current vs. Voltage
and Temperature.
6-153
-10
0.1
+85 °C
0.6
1.2
1.8
2.4
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency
and Temperature.
2.2
+25 °C
-2
-8
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and
Temperature.
0
-6
12
FREQUENCY (GHz)
VSWR (n:1)
P 1 dB (dBm)
18
+85 °C
+25 °C
NOISE FIGURE (dB)
GAIN (dB)
20
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and
Temperature.
INA-51063 Applications
Information
Introduction
The INA-51063 is a silicon RFIC
amplifier with a 50 Ω input and
output. The INA-51063 is easy to
use for low noise and multipurpose gain block applications
up to 2.4 GHz.
Phase Reference Planes
The positions of the reference
planes used to measure
S-Parameters are shown in
Figure 9. As seen in the
illustration, the reference planes
are located at the point where the
package leads contact the test
circuit.
Biasing
The INA-51063 is a voltage biased
device and operates from a single
+5 volt power supply with a
typical current drain of only
12␣ mA. All bias regulation
circuitry is integrated into the
RFIC. The supply voltage for the
INA-51063 is fed in through the
separate VCC pin of the device and
does not require RF isolation
from the input or output. No
additional external DC components are needed.
REFERENCE
PLANES
Operating Details
The INA-51063 is very easy to use.
The basic application of the INA51063 is shown in Figure 10.
DC blocking capacitors are
placed in series with the RF Input
and RF Output to isolate adjacent
stages from the internal bias
voltages that are present at these
terminals. The values of the
blocking capacitors are determined by the lowest operating
frequency. The values for the
blocking capacitors are chosen
such that their reactances are
small relative to 50 Ω. As an
example, use of the INA-51063 for
a 2.4 GHz application would
require blocking capacitors of at
least 33 pF.
The VCC connection to the amplifier must be RF bypassed by
placing a capacitor to ground
directly at the bias pin of the
package. Like the DC blocking
capacitors, the value of the VCC
bypass capacitor is determined by
the lowest operating frequency
for the amplifier. This value may
typically be the same as that of
the DC blocking capacitors. If
long bias lines are used to
connect the amplifier to the VCC
supply, additional bypass capacitors may be needed to prevent
resonances that would otherwise
result in undesirable gain
responses. A well-bypassed VCC
line is also desirable to prevent
possible oscillations that may
occur due to feedback through
the bias line from other stages in
a cascade.
SOT-363 PCB Layout
The INA-51063 is packaged in the
miniature SOT-363 (SC-70)
surface mount package. A PCB
pad layout for the SOT-363
package is shown in Figure 11
(dimensions are in inches). This
layout provides ample allowance
for package placement by automated assembly equipment
without adding parasitics that
could impair the high frequency
RF performance of the
INA-51063. The layout is shown
0.026
0.07
0.035
0.016
Figure 11. PCB Pad Layout
(Dimensions in Inches).
Cblock
TEST CIRCUIT
RF
OUTPUT
51
Figure 9. Reference Planes.
RF
INPUT
VCC
Cblock
Cbypass
Figure 10. Basic Amplifier
Application.
6-154
with a nominal SOT-363 package
footprint superimposed on the
PCB pads.
RF Layout
The RF layout in Figure 12 is
suggested as a starting point for
designs using the INA-51063
amplifier. Adequate grounding is
needed to obtain maximum
performance and to reduce the
possibility of potential instability.
All three ground pins of the RFIC
should be connected to RF
C
VCC
ground by using plated through
holes (vias) near the package
terminals. The power supply
connection to the amplifier must
be RF bypassed by placing a
capacitor directly to ground at
the VCC pin of the package.
It is recommended that the PCB
traces for the ground pins NOT be
connected together underneath
the body of the package. PCB
pads hidden under the package
cannot be adequately inspected
for SMT solder quality.
RF OUTPUT
50 Ω
51
50 Ω
RF INPUT
Figure 12. RF Layout.
INA-51063 Part Number Ordering Information
Part Number
Devices per Container
Container
INA-51063-TR1
3,000
7" reel
INA-51063-BLK
100
Antistatic bag
Package Dimensions
Outline 63 (SOT-363/SC-70)
1.30 (0.051)
REF.
2.20 (0.087)
2.00 (0.079)
1.35 (0.053)
1.15 (0.045)
0.650 BSC (0.025)
0.425 (0.017)
TYP.
2.20 (0.087)
1.80 (0.071)
0.10 (0.004)
0.00 (0.00)
0.30 REF.
1.00 (0.039)
0.80 (0.031)
0.25 (0.010)
0.15 (0.006)
10°
0.30 (0.012)
0.10 (0.004)
0.20 (0.008)
0.10 (0.004)
DIMENSIONS ARE IN MILLIMETERS (INCHES)
6-155
FR-4 or G-10 PCB material is a
good choice for most low cost
wireless applications. Typical
board thickness is 0.025 or
0.031␣ inches. The width of 50 Ω
microstriplines in these PCB
thicknesses is also convenient for
mounting chip components such
as the series inductor at the input
for impedance matching or for
DC blocking capacitors. For noise
figure sensitive applications, the
use of PTFE/glass dielectric
materials may be warranted to
minimize transmission line losses
at the amplifier input.