SEMIWELL MCR100-6

MCR100-6
SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
Symbol
2. Gate
Features
▼
○
○
3. Anode
○
1. Cathode
Repetitive Peak Off-State Voltage : 400V
◆ R.M.S On-State Current ( IT(RMS)= 0.8 A )
◆ Low On-State Voltage (1.2V(Typ.)@ ITM)
◆
TO-92
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
1
Absolute Maximum Ratings
Symbol
23
( TJ = 25°C unless otherwise specified )
Parameter
Condition
Ratings
Units
400
V
VDRM
Repetitive Peak Off-State Voltage
IT(AV)
Average On-State Current
Half Sine Wave : TC = 74 °C
0.5
A
IT(RMS)
R.M.S On-State Current
All Conduction Angle
0.8
A
ITSM
Surge On-State Current
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
10
A
I2t for Fusing
t = 8.3ms
0.415
A2 s
2
W
0.1
W
I2 t
PGM
PG(AV)
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
IFGM
Forward Peak Gate Current
1
A
VRGM
Reverse Peak Gate Voltage
5.0
V
Operating Junction Temperature
- 40 ~ 125
°C
Storage Temperature
- 40 ~ 150
°C
TJ
TSTG
1/5
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
MCR100-6
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Items
Ratings
Conditions
Min.
Typ.
Max.
Unit
IDRM
Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 125 °C
─
─
─
─
10
200
㎂
VTM
Peak On-State Voltage (1)
( ITM = 1 A, Peak )
─
1.2
1.7
V
IGT
Gate Trigger Current (2)
TC = 25 °C
TC = - 40 °C
─
─
─
─
200
500
㎂
VGT
Gate Trigger Voltage (2)
TC = 25 °C
TC = - 40 °C
─
─
─
─
0.8
1.2
V
VGD
Non-Trigger Gate Voltage (1)
VAK = 12 V, RL=100 Ω
TC = 125 °C
0.2
─
─
V
dv/dt
Critical Rate of Rise Off-State
Voltage
form , RGK = 1000 Ω
TJ = 125 °C
500
800
─
V/㎲
─
─
50
A/㎲
─
─
2
─
5.0
10
mA
VAK = 6 V, RL=100 Ω
VD = 7 V, RL=100 Ω
di/dt
IH
Critical Rate of Rise On-State
Current
Holding Current
VD = Rated VDRM ,
Exponential wave-
IPK = 20A ; PW = 10㎲ ; diG/dt = 1A/㎲
Igt = 20mA
VAK = 12 V, Gate Open
Initiating Curent = 20mA
TC = 25 °C
TC = - 40 °C
Rth(j-c)
Thermal Impedance
Junction to case
─
─
60
°C/W
Rth(j-a)
Thermal Impedance
Junction to Ambient
─
─
150
°C/W
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include RGK in measurement.
2/5
MCR100-6
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
Max. Allowable Case Temperature [ C]
140
1
o
10
PGM(2W)
PG(AV)(0.1W)
0
10
IGM(1A)
Gate Voltage [V]
VGM(5V)
o
25 C
VGD(0.2V)
-1
10
0
1
10
2
10
3
10
120
100
π
60
2π
θ
40
360°
θ
20
0
0.0
4
10
o
θ = 180
80
10
: Conduction Angl e
0.1
0.2
0.3
0.4
0.5
0.6
Average On-State Current [A]
Gate Current [mA]
Fig 3. Typical Forward Voltage
Fig 4. Thermal Response
10
3
On-State Current [A]
o
Transient Thermal Impedance [ C/W]
10
1
o
125 C
o
25 C
0.1
0.5
2
10
Rθ (J-C)
1
10
0
1.0
1.5
2.0
2.5
3.0
3.5
10
4.0
-2
10
-1
0
10
3
10
10
o
0
50
100
o
Junction Temperature[ C]
150
o
IGT(t C)
1
IGT(25 C)
VGT(toC)
10
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
10
VGT(25oC)
2
10
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
0.1
-50
1
10
On-State Voltage [V]
1
0.1
-50
0
50
100
150
o
Junction Temperature[ C]
3/5
MCR100-6
Fig 7. Typical Holding Current
Fig 8. Power Dissipation
10
0.8
o
Max. Average Power Dissipation [W]
o
IH(t C)
IH(25 C)
θ = 180
1
0.1
-50
0
50
100
o
Junction Temperature[ C]
4/5
150
0.7
θ = 90
0.6
θ = 30
o
θ = 60
o
θ = 120
o
o
o
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
0.2
0.3
0.4
Average On-State Current [A]
0.5
0.6
MCR100-6
TO-92 Package Dimension
mm
Inch
Dim.
Min.
Typ.
A
Max.
Min.
4.2
Typ.
Max.
0.165
B
3.7
0.146
C
4.43
4.83
0.174
0.190
D
14.07
14.87
0.554
0.585
E
F
0.4
4.43
4.83
G
0.016
0.174
0.190
0.45
0.017
H
2.54
0.100
I
2.54
0.100
J
0.33
0.48
A
0.013
0.019
E
B
F
C
G
1
D
2
3
H
I
1. Cathode
2. Gate
3. Anode
J
5/5