Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. 400-2500 MHz ¼ W Medium Power GaAs HBT Amplifier with Active Bias These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications. Product Features • On-chip Active Bias Control, Single 5V Supply • High Output 3rd Order Intercept: +42 to +44 dBm typ. • High P1dB : +25 dBm typ. • High Gain: +19 dB at 850 MHz • High Efficiency: consumes only 600 mW • Patented High Reliability GaAs HBT Technology • Surface-Mountable Power Plastic Package Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. Typical IP3, P1dB, Gain 50 OIP3 P1dB Gain 45 40 35 dBm 30 25 20 15 Applications 10 5 • W-CDMA, PCS, Cellular Systems • High Linearity IF Amplifiers • Multi-Carrier Applications 0 850 MHz Symbol 1960 MHz 2140 MHz 2450 MHz Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25°C Units Min. Typ. P 1dB Output Power at 1dB Compression f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz dB m S 21 Small signal gain f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz dB S11 Input VSWR f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz - 1.3:1 1.4:1 1.3:1 1.1:1 Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz dB m 43 44 42 42 Noise Figure f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz dB Device Current V cc = 5 V mA OIP3 NF ID PDISS Operating Dissipated Power Rth, j-l Thermal Resistance (junction - lead) 24 12.5 39 Max. 25 25 25 25 19 14 13.5 13 15 4.7 5.5 6.0 6.0 90 115 122 mW 575 610 ° C/W 100 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102231 Rev C SXA-389 ¼ W GaAs HBT Amplifier 850 MHz Application Circuit Data, VCC= 5V, ID= 120mA Note: Tuned for Output IP3 P1dB vs. Frequency Gain vs. Frequency 30 25 28 23 26 21 -40C 25C dB dBm 85C 24 19 25C 85C -4 0 C 22 17 15 20 0 .8 0 .8 5 0 .9 0 .8 0 .9 5 0 .9 5 GHz Input/Output Return Loss, Isolation vs. Frequency, T=25°C Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 0 50 -5 47 -1 5 dBm dB 0 .9 GHz -1 0 S 11 S 12 -2 0 -40C 25C 85C 44 41 S 22 38 -2 5 35 -3 0 0 .8 50 0 .8 5 0 .9 0 .9 5 0 .8 0 .9 0 .9 5 GHz Third Order Intercept vs. Tone Power Frequency = 850 MHz 880 MHz Adjacent Channel Power vs. Channel Output Power -40 Adjacent Channel Power (dBc) 85C 44 41 38 35 0 0 .8 5 GHz -40C 25C 47 dBm 0 .8 5 3 6 9 12 15 -45 -50 -55 -60 25C 85C -40C -65 -70 -75 10 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 12 14 16 18 20 Channel Output Power (dBm) IS-95, 9 Channels Forward Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102231 Rev C SXA-389 ¼ W GaAs HBT Amplifier 1960 MHz Application Circuit Data, VCC= 5V, ID= 120mA Note: Tuned for Output IP3 Gain vs. Frequency P1dB vs. Frequency 30 20 28 18 26 16 25C 85C dB dBm -40C 24 14 25C 85C -40C 22 20 1.93 1.94 1.95 1.96 1.97 1.98 12 10 1.93 1.99 1.94 1.95 1.96 1.97 1.98 GHz GHz Input/Output Return Loss, Isolation vs. Frequency, T=25°C Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 50 0 1.99 S 11 -5 S 12 dBm dB 47 S 22 -1 0 -1 5 -2 0 44 41 -40C -2 5 38 -3 0 1 .9 3 35 1.93 25C 85C 1 .9 4 1 .9 5 1 .9 6 1 .9 7 1 .9 8 1 .9 9 1.95 1.96 1.97 1.98 GHz Third Order Intercept vs. Tone Power Frequency = 1.96 GHz 1960 MHz Adjacent Channel Power vs. Channel Output Power 1.99 -40 Adjacent Channel Power (dBc) 50 47 dBm 1.94 GHz 44 41 -40C 25C 38 85C -45 -50 -55 -60 25C -65 85C -40C -70 -75 35 0 3 6 9 12 10 15 14 16 18 20 Channel Output Power (dBm) IS-95, 9 Channels Forward POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 12 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102231 Rev C SXA-389 ¼ W GaAs HBT Amplifier 2140 MHz Application Circuit Data, VCC= 5V, ID= 120mA Note: Tuned for Output IP3 Gain vs. Frequency P1dB vs. Frequency 30 20 28 18 26 16 25C 85C dB dBm -40C 14 24 25C 85C -40C 22 20 2.11 2.12 2.13 2.14 2.15 2.16 12 10 2.11 2.17 2.13 2.15 2.16 Input/Output Return Loss, Isolation vs. Frequency, T=25°C Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 2.17 50 -5 -40C 25C 47 85C -10 -15 dBm S 11 S 12 S 22 -20 44 41 38 -25 -30 2.11 2.12 2.13 2.14 2.15 2.16 35 2.11 2.17 2.12 2.13 GHz 2.14 2.15 2.16 2.17 GHz Third Order Intercept vs. Tone Power Frequency = 2.14 GHz 2140 MHz Adjacent Channel Power vs. Channel Output Power -40 Adjacent Channel Power (dBc) 50 -40C 47 25C 85C dBm 2.14 GHz 0 dB 2.12 GHz 44 41 38 35 -45 -50 -55 -60 25C 85C -65 -40C -70 0 3 6 9 12 15 10 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 11 12 13 14 15 16 17 Channel Output Power (dBm) W-CDMA, 64 DPCH + Overhead Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-102231 Rev C SXA-389 ¼ W GaAs HBT Amplifier 2450 MHz Application Circuit Data, VCC= 5V, ID= 120mA Note: Tuned for Output IP3 Gain vs. Frequency 20 28 18 26 16 25C 85C -40C dB dBm P1dB vs. Frequency 30 24 14 25C 85C -40C 22 12 20 10 2.4 2.42 2.44 2.46 2.48 2.5 2.4 2.42 2.44 2.46 2.48 GHz Input/Output Return Loss, Isolation vs. Frequency, T=25°C Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 50 0 -40C 25C 85C -5 47 -10 -20 dBm S 11 S 12 -15 dB 2.5 GHz S 22 -25 -30 44 41 38 -35 -40 35 2.4 2.42 2.44 2.46 2.48 2.5 2.4 GHz 2.42 2.44 2.46 2.48 2.5 GHz Third Order Intercept vs. Tone Power Frequency = 2.45 GHz 50 -40C 25C 47 dBm 85C 44 41 38 35 0 3 6 9 12 15 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-102231 Rev C SXA-389 Application Schematic ¼ W GaAs HBT Amplifier V cc C1 C2 C3 L1 C7 C4 R F in Z = 50 Ω , E L 1 Z = 5 0 Ω , E L2 ° Z = 50 Ω , E L 3 ° RFout ° L2 C5 C6 Ref. Des. Vendor Series 850 MHz 1960 MHz 2140 MHz 2450 MHz Ref. Des. C1 Matsuo 267M3502104K 0.1uF 10% 0.1uF 10% 0.1uF 10% 0.1uF 10% C6 Position C2 Rohm MCH18 1000pF 5% 1000pF 5% 1000pF 5% 1000pF 5% L1 C 3, C 7 Rohm MCH18 47pF 5% 22pF 5% 22pF 5% 22pF 5% L2 C4 Rohm MCH18 47pF 5% 22pF 5% 22pF 5% 1.2pF ±0.25pF C5 Rohm MCH18 3.9pF ±0.25pF - - C6 Rohm MCH18 3.9pF ±0.25pF 0.5pF ±0.25pF 0.5pF ±0.25pF Vendor Series 850 MHz 1960 MHz 2140 MHz 2450 MHz 2 1 1 1 Toko LL1608-FS 33nH 5% 18nH 5% 18nH 5% 15nH 5% Toko LL1608-FS 1.2nH ±0.3nH thru thru thru E L1 9.7 - - - - E L2 5.6 - - - 0.5pF ±0.25pF E L3 13.2 28.7 31.4 35.9 Evaluation Board Layout RFout RFin + C1 C2 C3 L1 C4 L2 C5 C7 12 C6 SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-102231 Rev C SXA-389 Absolute Maximum Ratings Parameter ¼ W GaAs HBT Amplifier Absolute Limit Part Number Ordering Information 240 mA Part Number Devices Per Reel Reel Siz e Max. Supply Current (ID) Max. Device Voltage (VCC) 6.0 V Max. Power Dissipation 1500 mW Max. RF Input Power 100 mW Max. Junction Temp. (TJ) SXA-389 -40 to +85 ºC Max. Storage Temp. 7" Part Symbolization The part will be symbolized with a “XA3” designator on the top surface of the package. +165 ºC Operating Lead Temp. (TL) 1000 Pin Description +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVCC (max) < (TJ - TL)/Rth,j-l Pin # Function 1 B a se 2 GND & Emitter 3 ESD: Class 1B (Passes 500V ESD Pulse) Appropriate precautions in handling, packaging and testing devices must be observed. 4 Description B a se P i n Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Collector Pin GND & Emitter Same as Pin 2 Package Dimensions (See SMDI MPO-100136 for tolerances) .161 .059 .096 .041 .008 3 .016REF XA3 .177 4 2 .118REF .045 Min .009 .118 .065 Min .019 .059 Ref .059 1 .016 .029 .085 Min DOT DENOTES PIN 1 MARKING AREA .041REF .161 REF TOP VIEW 5° .015TYP(4X) Recommended Mounting Configuration for Optimum RF and Thermal Performance PCB Pad Layout Ground Plane Plated Thru Holes (0.020" DIA) SXA-389 Machine Screws (Optional) DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-102231 Rev C