ETC SXA-389

Product Description
SXA-389
Sirenza Microdevices’ SXA-389 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
400-2500 MHz ¼ W Medium Power
GaAs HBT Amplifier with Active Bias
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 400-2500 MHz
cellular, ISM, WLL, PCS, W-CDMA applications.
Product Features
• On-chip Active Bias Control, Single 5V Supply
• High Output 3rd Order Intercept:
+42 to +44 dBm typ.
• High P1dB : +25 dBm typ.
• High Gain: +19 dB at 850 MHz
• High Efficiency: consumes only 600 mW
• Patented High Reliability GaAs HBT Technology
• Surface-Mountable Power Plastic Package
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
Typical IP3, P1dB, Gain
50
OIP3
P1dB
Gain
45
40
35
dBm
30
25
20
15
Applications
10
5
• W-CDMA, PCS, Cellular Systems
• High Linearity IF Amplifiers
• Multi-Carrier Applications
0
850 MHz
Symbol
1960 MHz
2140 MHz
2450 MHz
Parameters: Test Conditions:
Z0 = 50 Ohms, Ta = 25°C
Units
Min.
Typ.
P 1dB
Output Power at 1dB Compression
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
dB m
S 21
Small signal gain
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
dB
S11
Input VSWR
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
-
1.3:1
1.4:1
1.3:1
1.1:1
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
dB m
43
44
42
42
Noise Figure
f = 850 MHz
f = 1960 MHz
f = 2140 MHz
f = 2450 MHz
dB
Device Current
V cc = 5 V
mA
OIP3
NF
ID
PDISS
Operating Dissipated Power
Rth, j-l
Thermal Resistance (junction - lead)
24
12.5
39
Max.
25
25
25
25
19
14
13.5
13
15
4.7
5.5
6.0
6.0
90
115
122
mW
575
610
° C/W
100
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-102231 Rev C
SXA-389
¼ W GaAs HBT Amplifier
850 MHz Application Circuit Data, VCC= 5V, ID= 120mA
Note: Tuned for Output IP3
P1dB vs. Frequency
Gain vs. Frequency
30
25
28
23
26
21
-40C
25C
dB
dBm
85C
24
19
25C
85C
-4 0 C
22
17
15
20
0 .8
0 .8 5
0 .9
0 .8
0 .9 5
0 .9 5
GHz
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
0
50
-5
47
-1 5
dBm
dB
0 .9
GHz
-1 0
S 11
S 12
-2 0
-40C
25C
85C
44
41
S 22
38
-2 5
35
-3 0
0 .8
50
0 .8 5
0 .9
0 .9 5
0 .8
0 .9
0 .9 5
GHz
Third Order Intercept vs. Tone Power
Frequency = 850 MHz
880 MHz Adjacent Channel Power vs.
Channel Output Power
-40
Adjacent Channel Power (dBc)
85C
44
41
38
35
0
0 .8 5
GHz
-40C
25C
47
dBm
0 .8 5
3
6
9
12
15
-45
-50
-55
-60
25C
85C
-40C
-65
-70
-75
10
POUT per tone (dBm)
522 Almanor Ave., Sunnyvale, CA 94085
12
14
16
18
20
Channel Output Power (dBm)
IS-95, 9 Channels Forward
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-102231 Rev C
SXA-389
¼ W GaAs HBT Amplifier
1960 MHz Application Circuit Data, VCC= 5V, ID= 120mA
Note: Tuned for Output IP3
Gain vs. Frequency
P1dB vs. Frequency
30
20
28
18
26
16
25C
85C
dB
dBm
-40C
24
14
25C
85C
-40C
22
20
1.93
1.94
1.95
1.96
1.97
1.98
12
10
1.93
1.99
1.94
1.95
1.96
1.97
1.98
GHz
GHz
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
50
0
1.99
S 11
-5
S 12
dBm
dB
47
S 22
-1 0
-1 5
-2 0
44
41
-40C
-2 5
38
-3 0
1 .9 3
35
1.93
25C
85C
1 .9 4
1 .9 5
1 .9 6
1 .9 7
1 .9 8
1 .9 9
1.95
1.96
1.97
1.98
GHz
Third Order Intercept vs. Tone Power
Frequency = 1.96 GHz
1960 MHz Adjacent Channel Power vs.
Channel Output Power
1.99
-40
Adjacent Channel Power (dBc)
50
47
dBm
1.94
GHz
44
41
-40C
25C
38
85C
-45
-50
-55
-60
25C
-65
85C
-40C
-70
-75
35
0
3
6
9
12
10
15
14
16
18
20
Channel Output Power (dBm)
IS-95, 9 Channels Forward
POUT per tone (dBm)
522 Almanor Ave., Sunnyvale, CA 94085
12
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-102231 Rev C
SXA-389
¼ W GaAs HBT Amplifier
2140 MHz Application Circuit Data, VCC= 5V, ID= 120mA
Note: Tuned for Output IP3
Gain vs. Frequency
P1dB vs. Frequency
30
20
28
18
26
16
25C
85C
dB
dBm
-40C
14
24
25C
85C
-40C
22
20
2.11
2.12
2.13
2.14
2.15
2.16
12
10
2.11
2.17
2.13
2.15
2.16
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
2.17
50
-5
-40C
25C
47
85C
-10
-15
dBm
S 11
S 12
S 22
-20
44
41
38
-25
-30
2.11
2.12
2.13
2.14
2.15
2.16
35
2.11
2.17
2.12
2.13
GHz
2.14
2.15
2.16
2.17
GHz
Third Order Intercept vs. Tone Power
Frequency = 2.14 GHz
2140 MHz Adjacent Channel Power vs.
Channel Output Power
-40
Adjacent Channel Power (dBc)
50
-40C
47
25C
85C
dBm
2.14
GHz
0
dB
2.12
GHz
44
41
38
35
-45
-50
-55
-60
25C
85C
-65
-40C
-70
0
3
6
9
12
15
10
POUT per tone (dBm)
522 Almanor Ave., Sunnyvale, CA 94085
11
12
13
14
15
16
17
Channel Output Power (dBm)
W-CDMA, 64 DPCH + Overhead
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-102231 Rev C
SXA-389
¼ W GaAs HBT Amplifier
2450 MHz Application Circuit Data, VCC= 5V, ID= 120mA
Note: Tuned for Output IP3
Gain vs. Frequency
20
28
18
26
16
25C
85C
-40C
dB
dBm
P1dB vs. Frequency
30
24
14
25C
85C
-40C
22
12
20
10
2.4
2.42
2.44
2.46
2.48
2.5
2.4
2.42
2.44
2.46
2.48
GHz
Input/Output Return Loss,
Isolation vs. Frequency, T=25°C
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
50
0
-40C
25C
85C
-5
47
-10
-20
dBm
S 11
S 12
-15
dB
2.5
GHz
S 22
-25
-30
44
41
38
-35
-40
35
2.4
2.42
2.44
2.46
2.48
2.5
2.4
GHz
2.42
2.44
2.46
2.48
2.5
GHz
Third Order Intercept vs. Tone Power
Frequency = 2.45 GHz
50
-40C
25C
47
dBm
85C
44
41
38
35
0
3
6
9
12
15
POUT per tone (dBm)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
5
http://www.sirenza.com
EDS-102231 Rev C
SXA-389
Application Schematic
¼ W GaAs HBT Amplifier
V cc
C1
C2
C3
L1
C7
C4
R F in
Z = 50 Ω , E L 1
Z = 5 0 Ω , E L2
°
Z = 50 Ω , E L 3
°
RFout
°
L2
C5
C6
Ref. Des.
Vendor
Series
850
MHz
1960
MHz
2140
MHz
2450
MHz
Ref. Des.
C1
Matsuo
267M3502104K
0.1uF
10%
0.1uF
10%
0.1uF
10%
0.1uF
10%
C6 Position
C2
Rohm MCH18
1000pF
5%
1000pF
5%
1000pF
5%
1000pF
5%
L1
C 3, C 7
Rohm MCH18
47pF
5%
22pF
5%
22pF
5%
22pF
5%
L2
C4
Rohm MCH18
47pF
5%
22pF
5%
22pF
5%
1.2pF
±0.25pF
C5
Rohm MCH18
3.9pF
±0.25pF
-
-
C6
Rohm MCH18
3.9pF
±0.25pF
0.5pF
±0.25pF
0.5pF
±0.25pF
Vendor
Series
850
MHz
1960
MHz
2140
MHz
2450
MHz
2
1
1
1
Toko LL1608-FS
33nH
5%
18nH
5%
18nH
5%
15nH
5%
Toko LL1608-FS
1.2nH
±0.3nH
thru
thru
thru
E L1
9.7
-
-
-
-
E L2
5.6
-
-
-
0.5pF
±0.25pF
E L3
13.2
28.7
31.4
35.9
Evaluation Board Layout
RFout
RFin
+
C1
C2
C3
L1
C4
L2
C5
C7
12
C6
SIRENZA MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev B
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
6
http://www.sirenza.com
EDS-102231 Rev C
SXA-389
Absolute Maximum Ratings
Parameter
¼ W GaAs HBT Amplifier
Absolute Limit
Part Number Ordering Information
240 mA
Part Number Devices Per Reel Reel Siz e
Max. Supply Current (ID)
Max. Device Voltage (VCC)
6.0 V
Max. Power Dissipation
1500 mW
Max. RF Input Power
100 mW
Max. Junction Temp. (TJ)
SXA-389
-40 to +85 ºC
Max. Storage Temp.
7"
Part Symbolization
The part will be symbolized with a “XA3”
designator on the top surface of the package.
+165 ºC
Operating Lead Temp. (TL)
1000
Pin Description
+150 ºC
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continuous operation, the
device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVCC (max) < (TJ - TL)/Rth,j-l
Pin #
Function
1
B a se
2
GND & Emitter
3
ESD: Class 1B (Passes 500V ESD Pulse)
Appropriate precautions in handling, packaging
and testing devices must be observed.
4
Description
B a se P i n
Connection to ground. Use via holes to reduce lead inductance.
Place vias as close to ground leads as possible.
Collector
Collector Pin
GND & Emitter Same as Pin 2
Package Dimensions
(See SMDI MPO-100136 for tolerances)
.161
.059
.096
.041
.008
3
.016REF
XA3
.177
4
2
.118REF
.045 Min
.009
.118
.065 Min
.019
.059 Ref
.059
1
.016
.029
.085 Min
DOT DENOTES
PIN 1
MARKING AREA
.041REF
.161 REF
TOP VIEW
5°
.015TYP(4X)
Recommended Mounting Configuration for
Optimum RF and Thermal Performance
PCB Pad Layout
Ground Plane
Plated Thru
Holes
(0.020" DIA)
SXA-389
Machine
Screws
(Optional)
DIMENSIONS ARE IN INCHES [MM]
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
7
http://www.sirenza.com
EDS-102231 Rev C