Preliminary Product Description Stanford Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 5-2000 MHz cellular, ISM, WLL and narrowband PCS applications. dBm Typical IP3, P1dB, Gain at 1960 MHz Surface-Mountable Power Plastic Package Applications • PCS, Cellular Systems • High Linearity IF Amplifiers P1dB P1dB Gain(dB) Gain(dB) 850 MHz Symbol • IP3 IP3 5-2000 MHz Medium Power GaAsHBT Amplifier Product Features • Patented High Reliability GaAs HBT Technology • High Output 3rd Order Intercept : +41.5 dBm typ. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. 45 40 35 30 25 20 15 10 5 0 SXA-289 1960 MHz Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Units P 1dB Output Power at 1dB Compression f = 850 MHz f = 1960 MHz dB m dB m S 21 Small signal gain f = 850 MHz f = 1960 MHz dB dB S11 Input VSWR f = 850 MHz f = 1960 MHz - IP3 Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) f = 850 MHz f = 1960 MHz dB m dB m NF Noise Figure f = 850 MHz f = 1960 MHz dB dB Device Current V s = 8V Rbias = 27 ohms Vdevice = 5 V typ. mA Id Rth, j-l Thermal Resistance (junction - lead) ° C/W Min. Typ. Max. 24.0 24.0 18.0 20.0 15.0 21.5 1.3:1 1.7:1 38.0 40.5 41.5 5.0 5.7 85 105 120 108 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-100622 Rev E SXA-289 5-2000 MHz Power Amplifier 850 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 Gain vs. Frequency 25 25 23 24 21 25C -40C 23 dB dBm P1dB vs Frequency 26 85C 22 15 825 850 875 900 925 950 800 825 850 875 925 950 MHz Input/Output Return Loss, Isolation vs Frequency Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 45 5 0 -5 -10 -15 -20 -25 -30 -35 800 43 S22 S11 25C 900 35 800 950 825 850 875 Third Order Intercept vs Tone Power Device Current (mA) 25C -40C 38 36 3 6 925 950 Device Current vs. Source Voltage 42 85C 900 MHz 44 40 -40C 85C 39 37 S12 850 41 MHz 0 900 MHz dBm dB 85C 17 21 800 dBm -40C 25C 19 9 12 180 160 140 120 100 80 60 40 20 0 25C -40C 85C 0 15 POUT per tone (dBm) 522 Almanor Ave., Sunnyvale, CA 94085 2 4 6 8 10 VS (V) Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-100622 Rev E SXA-289 5-2000 MHz Power Amplifier 1960 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V Note: Tuned for Output IP3 Gain vs. Frequency 20 25 18 -40C 24 25C 25C 23 14 22 12 85C 10 21 1930 1940 1950 1960 1970 1980 1990 1930 1950 1960 Third Order Intercept vs. Frequency (POUT per tone = 11dBm) -5 S22 1990 42 25C S11 dBm -15 -20 -25 85C 40 -40C 38 S12 -30 36 1940 1950 1960 1970 1980 1930 1990 1940 1950 1960 MHz Third Order Intercept vs Tone Power 25C 85C -40C 38 36 34 3 6 1980 1990 Device Current vs. Source Voltage Device Current (mA) 42 40 1970 MHz 44 dBm 1980 Input/Output Return Loss, Isolation vs Frequency -10 0 1970 MHz 44 -35 1930 1940 MHz 0 dB -40C 16 85C dB dBm P1dB vs Frequency 26 9 12 15 180 160 140 120 100 80 60 40 20 0 25C -40C 85C 0 522 Almanor Ave., Sunnyvale, CA 94085 2 4 6 8 10 VS (V) POUT per tone (dBm) Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100622 Rev E 850 MHz Application Circuit SXA-289 5-2000 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Vs Supply Voltage(Vs) 7V 8V 10V Rbias (Ohms) 18 27 47 62 Power Rating 0.5W 1.0W 1.5W 2.0W Rbias 0.1 µF (SIZE A) 12V 68pF 390 Ω Rbias 1000pF 180 Ω 33 nH 33 nH 0.1uF RFin 100 pF Z=50Ω, 12.9° 100 pF 390 Ohms 180 Ohms RFout 1000pF 68 pF SXA-289 100pF 33nH 33nH 100pF 5.6 pF 5.6pF 850 MHz Schematic SXA-289 STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 850 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Vs = 5V 0.1 µF (SIZE A) 2 20.0 Input Return Loss (dB) -22.8 Output IP3 (dBm) 37.7* P1dB (dBm) 23.0 1000 pF (Rohm) UMZ1N 1 Vdev 4 5 *Note: IP3 performance degraded due to lower (4.5V) device voltage. 33 nH 1.8 KΩ 3 850 M H z Small Signal Gain (dB) Rbias=4.3 Ω 220 Ω 6 Frequency 68 pF 100 pF GND 750Ω Z=50Ω, 12.9° 100 pF 0.1 uF UMZ1N SXA-289 VCC 68pF 220Ω 4.3Ω 1000pF 5.6 pF 1.8KΩ RF IN 33nH RF OUT 1 850 MHz Schematic 750Ω 100pF 100pF 5.6pF NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. 850 MHz Active Bias Evaluation Board Layout ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 522 Almanor Ave., Sunnyvale, CA 94085 STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100622 Rev E 1960 MHz Application Circuit SXA-289 5-2000 MHz Power Amplifier Voltage Feed Resistor Bias Circuit (for > 7V supply) Recommended Bias Resistor Values Vs Supply Voltage(Vs) 7V 8V 10V Rbias (Ohms) 18 27 47 62 Power Ratings 0.5W 1.0W 1.5W 2.0W Rbias 0.1 µF (SIZE A) 12V 22pF 390 Ω Rbias 1000pF 180 Ω 390 Ohms 180 Ohms 22nH 0.1uF 1000pF 22pF RFin 22nH 68pF Z=50Ω, 45.5° 68pF 68 pF SXA-289 22nH 22nH 68pF 1.8pF SXA-289 1.8 pF 1960 MHz Schematic RFout STANFORD MICRODEVICES SOT-89 Eval Board ECB-101499 Rev A 1960 MHz Evaluation Board Layout Active Current Feedback Bias Circuit (for 5V supply) Vs = 5V 0.1 µF (SIZE A) 220 Ω (Rohm) UMZ1N 2 6 1 Frequency 22 pF -12.1 Output IP3 (dBm) 38.0* P1dB(dBm) 23.3 *Note: IP3 performance degraded due to lower (4.5V) device voltage. Vdev 4 5 1.8 KΩ 14.9 Input Return Loss (dB) Rbias=4.3 Ω 1000 pF 1960 M H z Small Signal Gain (dB) 22nH GND 3 68pF 750Ω Z=50Ω, 45.5° 0.1 uF UMZ1N 220Ω 68 pF SXA-289 4.3Ω 1000pF RF OUT 22nH 1 68pF 1960 MHz Schematic 68pF 750Ω 1.2pF NOTE: Reference Application Note AN-026 for more information on Active Current Feedback Bias Circuit. STANFORD MICRODEVICES XAMP EVALUATION BOARD ECB-101872 Rev A SOT-89 1960 MHz Active Bias Evaluation Board Layout ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE 522 Almanor Ave., Sunnyvale, CA 94085 22pF 1.8KΩ RF IN 1.2 pF VCC Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-100622 Rev E Absolute Maximum Ratings Parameter Absolute Maximum Device Voltage 6V Device Current 200mA Power Dissipation 1500mW RF Input Power 100mW Junction Temperature +150C Operating Temperature -40C to +85C Storage Temperature SXA-289 5-2000 MHz Power Amplifier Part Number Ordering Information Part Number Devices Per Reel Reel Size SXA-289 1000 7" Part Symbolization The part will be symbolized with a “XA2” designator on the top surface of the package. Pin Description -65C to +150C Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Pin # Function 1 Base 2 GND & Emitter 3 4 Description Base Pin Collector Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin GND & Emitter Same as Pin 2 Package Dimensions .161±.006 .096±.006 .038±.002 .059±.004 .041±.006 .036±.002 .008 .048±.002 .010±.002 TYP(2X) .016REF .010 .118REF .177±.004 .118±.003 .068±.004 .019 +.003 -.002 .059 .059±.003 .034 .016 +.003 -.002 .030±.004 .105±.002 MARKING AREA DOT DENOTES PIN 1 TOP VIEW .117±.002 .041REF +3° 5° -4° .024±.004 .161 REF +.002 .015 -.001 TYP(4X) PCB Pad Layout Recommended via and mounting hole pattern (For RF Ground and Thermal considerations) DIMENSIONS ARE IN INCHES [MM] Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a continuous groundplane on the backside of the board. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-100622 Rev E