STANFORD SXA-289

Preliminary
Product Description
Stanford Microdevices’ SXA-289 amplifier is a high
efficiency GaAs Heterojunction Bipolar Transistor (HBT)
MMIC housed in low-cost surface-mountable plastic
package. These HBT MMICs are fabricated using molecular
beam epitaxial growth technology which produces reliable
and consistent performance from wafer to wafer and lot to
lot.
These amplifiers are specially designed for use as driver
devices for infrastructure equipment in the 5-2000 MHz
cellular, ISM, WLL and narrowband PCS applications.
dBm
Typical IP3, P1dB, Gain
at 1960 MHz
Surface-Mountable Power Plastic Package
Applications
• PCS, Cellular Systems
• High Linearity IF Amplifiers
P1dB
P1dB
Gain(dB)
Gain(dB)
850 MHz
Symbol
•
IP3
IP3
5-2000 MHz Medium Power
GaAsHBT Amplifier
Product Features
• Patented High Reliability GaAs HBT Technology
• High Output 3rd Order Intercept : +41.5 dBm typ.
Its high linearity makes it an ideal choice for multi-carrier as
well as digital applications.
45
40
35
30
25
20
15
10
5
0
SXA-289
1960 MHz
Parameters: Test Conditions:
Z0 = 50 Ohms, Ta = 25C
Units
P 1dB
Output Power at 1dB Compression
f = 850 MHz
f = 1960 MHz
dB m
dB m
S 21
Small signal gain
f = 850 MHz
f = 1960 MHz
dB
dB
S11
Input VSWR
f = 850 MHz
f = 1960 MHz
-
IP3
Output Third Order Intercept Point
(Pout/Tone = +11 dBm, Tone spacing = 1 MHz)
f = 850 MHz
f = 1960 MHz
dB m
dB m
NF
Noise Figure
f = 850 MHz
f = 1960 MHz
dB
dB
Device Current
V s = 8V
Rbias = 27 ohms
Vdevice = 5 V typ.
mA
Id
Rth, j-l
Thermal Resistance (junction - lead)
° C/W
Min.
Typ.
Max.
24.0
24.0
18.0
20.0
15.0
21.5
1.3:1
1.7:1
38.0
40.5
41.5
5.0
5.7
85
105
120
108
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100622 Rev E
SXA-289 5-2000 MHz Power Amplifier
850 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
Gain vs. Frequency
25
25
23
24
21
25C
-40C
23
dB
dBm
P1dB vs Frequency
26
85C
22
15
825
850
875
900
925
950
800
825
850
875
925
950
MHz
Input/Output Return Loss,
Isolation vs Frequency
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
45
5
0
-5
-10
-15
-20
-25
-30
-35
800
43
S22
S11
25C
900
35
800
950
825
850
875
Third Order Intercept vs Tone Power
Device Current (mA)
25C
-40C
38
36
3
6
925
950
Device Current vs. Source Voltage
42
85C
900
MHz
44
40
-40C
85C
39
37
S12
850
41
MHz
0
900
MHz
dBm
dB
85C
17
21
800
dBm
-40C
25C
19
9
12
180
160
140
120
100
80
60
40
20
0
25C
-40C
85C
0
15
POUT per tone (dBm)
522 Almanor Ave., Sunnyvale, CA 94085
2
4
6
8
10
VS (V)
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-100622 Rev E
SXA-289 5-2000 MHz Power Amplifier
1960 MHz Application Circuit Data, Icc=105mA, T=+25C, Rbias=27 ohm, Vs=8V
Note: Tuned for Output IP3
Gain vs. Frequency
20
25
18
-40C
24
25C
25C
23
14
22
12
85C
10
21
1930
1940
1950
1960
1970
1980
1990
1930
1950
1960
Third Order Intercept vs. Frequency
(POUT per tone = 11dBm)
-5
S22
1990
42
25C
S11
dBm
-15
-20
-25
85C
40
-40C
38
S12
-30
36
1940
1950
1960
1970
1980
1930
1990
1940
1950
1960
MHz
Third Order Intercept vs Tone Power
25C
85C
-40C
38
36
34
3
6
1980
1990
Device Current vs. Source Voltage
Device Current (mA)
42
40
1970
MHz
44
dBm
1980
Input/Output Return Loss,
Isolation vs Frequency
-10
0
1970
MHz
44
-35
1930
1940
MHz
0
dB
-40C
16
85C
dB
dBm
P1dB vs Frequency
26
9
12
15
180
160
140
120
100
80
60
40
20
0
25C
-40C
85C
0
522 Almanor Ave., Sunnyvale, CA 94085
2
4
6
8
10
VS (V)
POUT per tone (dBm)
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-100622 Rev E
850 MHz Application Circuit
SXA-289 5-2000 MHz Power Amplifier
Voltage Feed Resistor Bias Circuit (for > 7V supply)
Recommended Bias Resistor Values
Vs
Supply Voltage(Vs)
7V
8V
10V
Rbias (Ohms)
18
27
47
62
Power Rating
0.5W
1.0W
1.5W
2.0W
Rbias
0.1 µF
(SIZE A)
12V
68pF
390 Ω
Rbias
1000pF
180 Ω
33 nH
33 nH
0.1uF
RFin
100 pF
Z=50Ω, 12.9°
100 pF
390 Ohms
180 Ohms
RFout
1000pF
68 pF
SXA-289
100pF
33nH
33nH
100pF
5.6 pF
5.6pF
850 MHz Schematic
SXA-289
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
850 MHz Evaluation Board Layout
Active Current Feedback Bias Circuit (for 5V supply)
Vs = 5V
0.1 µF
(SIZE A)
2
20.0
Input Return Loss (dB)
-22.8
Output IP3 (dBm)
37.7*
P1dB (dBm)
23.0
1000 pF
(Rohm)
UMZ1N
1
Vdev
4
5
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
33 nH
1.8 KΩ
3
850 M H z
Small Signal Gain (dB)
Rbias=4.3 Ω
220 Ω
6
Frequency
68 pF
100 pF
GND
750Ω
Z=50Ω, 12.9°
100 pF
0.1 uF
UMZ1N
SXA-289
VCC
68pF
220Ω
4.3Ω
1000pF
5.6 pF
1.8KΩ
RF IN
33nH
RF OUT
1
850 MHz Schematic
750Ω
100pF
100pF
5.6pF
NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.
850 MHz Active Bias Evaluation Board Layout
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
522 Almanor Ave., Sunnyvale, CA 94085
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-100622 Rev E
1960 MHz Application Circuit
SXA-289 5-2000 MHz Power Amplifier
Voltage Feed Resistor Bias Circuit (for > 7V supply)
Recommended Bias Resistor Values
Vs
Supply Voltage(Vs)
7V
8V
10V
Rbias (Ohms)
18
27
47
62
Power Ratings
0.5W
1.0W
1.5W
2.0W
Rbias
0.1 µF
(SIZE A)
12V
22pF
390 Ω
Rbias
1000pF
180 Ω
390 Ohms
180 Ohms
22nH
0.1uF
1000pF
22pF
RFin
22nH
68pF
Z=50Ω, 45.5°
68pF
68 pF
SXA-289
22nH
22nH
68pF
1.8pF
SXA-289
1.8 pF
1960 MHz Schematic
RFout
STANFORD MICRODEVICES
SOT-89 Eval Board
ECB-101499 Rev A
1960 MHz Evaluation Board Layout
Active Current Feedback Bias Circuit (for 5V supply)
Vs = 5V
0.1 µF
(SIZE A)
220 Ω
(Rohm)
UMZ1N
2
6
1
Frequency
22 pF
-12.1
Output IP3 (dBm)
38.0*
P1dB(dBm)
23.3
*Note: IP3 performance degraded due to lower
(4.5V) device voltage.
Vdev
4
5
1.8 KΩ
14.9
Input Return Loss (dB)
Rbias=4.3 Ω
1000 pF
1960 M H z
Small Signal Gain (dB)
22nH
GND
3
68pF
750Ω
Z=50Ω, 45.5°
0.1 uF
UMZ1N
220Ω
68 pF
SXA-289
4.3Ω
1000pF
RF OUT
22nH
1
68pF
1960 MHz Schematic
68pF
750Ω
1.2pF
NOTE: Reference Application Note AN-026 for more
information on Active Current Feedback Bias Circuit.
STANFORD MICRODEVICES
XAMP EVALUATION BOARD
ECB-101872 Rev A SOT-89
1960 MHz Active Bias Evaluation Board Layout
ALL COMPONENTS 0603 UNLESS NOTED OTHERWISE
522 Almanor Ave., Sunnyvale, CA 94085
22pF
1.8KΩ
RF IN
1.2 pF
VCC
Phone: (800) SMI-MMIC
5
http://www.stanfordmicro.com
EDS-100622 Rev E
Absolute Maximum Ratings
Parameter
Absolute Maximum
Device Voltage
6V
Device Current
200mA
Power Dissipation
1500mW
RF Input Power
100mW
Junction Temperature
+150C
Operating Temperature
-40C to +85C
Storage Temperature
SXA-289 5-2000 MHz Power Amplifier
Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
SXA-289
1000
7"
Part Symbolization
The part will be symbolized with a “XA2”
designator on the top surface of the package.
Pin Description
-65C to +150C
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Pin #
Function
1
Base
2
GND & Emitter
3
4
Description
Base Pin
Collector
Connection to ground. Use via holes to reduce lead inductance.
Place vias as close to ground leads as possible.
Collector Pin
GND & Emitter Same as Pin 2
Package Dimensions
.161±.006
.096±.006
.038±.002
.059±.004
.041±.006
.036±.002
.008
.048±.002
.010±.002 TYP(2X)
.016REF
.010
.118REF
.177±.004
.118±.003
.068±.004
.019 +.003
-.002
.059
.059±.003
.034
.016 +.003
-.002
.030±.004
.105±.002
MARKING AREA
DOT DENOTES
PIN 1
TOP VIEW
.117±.002
.041REF
+3°
5° -4°
.024±.004
.161 REF
+.002
.015 -.001 TYP(4X)
PCB Pad Layout
Recommended via and mounting hole pattern
(For RF Ground and Thermal considerations)
DIMENSIONS ARE IN INCHES [MM]
Use multiple plated-through vias holes located close to the package pins to ensure a good RF ground connection to a
continuous groundplane on the backside of the board.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
6
http://www.stanfordmicro.com
EDS-100622 Rev E