SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. Pb RoHS Compliant & Green Package 400-2500 MHz ¼ W Medium Power GaAs HBT Amplifier with Active Bias These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Product Features Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. • Now Available in Leed Free, RoHS Compliant, & Green Packaging • Lower Rth for increased MTTF 108 hrs. at TLead = 85°C • On-chip Active Bias Control, Single 5V Supply • Excellent Linearity: +43 dBm typ. OIP3 at 1960 MHz dBm Typical OIP3, P1dB, Gain 50 45 40 35 30 25 20 15 10 5 0 OIP3 P1dB Gain • High P1dB : +25 dBm typ. • High Gain: +18.5 dB at 850 MHz • Efficient: consumes only 575 mW Applications 850 MHz Symbol 1960 MHz 2140 MHz • W-CDMA, PCS, Cellular Systems • Multi-Carrier Applications 2450 MHz Parameters: Test C onditions: Z0 = 50 Ohms, Ta = 25°C U nits Min. Typ. P 1dB Output Power at 1dB C ompressi on f f f f = = = = 850 MHz 1960 MHz 2140 MHz 2450 MHz dB m S 21 Small si gnal gai n f f f f = = = = 850 MHz 1960 MHz 2140 MHz 2450 MHz dB S11 Input VSWR f f f f = = = = 850 MHz 1960 MHz 2140 MHz 2450 MHz - 1.2:1 1.3:1 1.2:1 1.2:1 Output Thi rd Order Intercept Poi nt (Pout/Tone = +11 dBm, Tone spaci ng = 1 MHz) f f f f = = = = 850 MHz 1960 MHz 2140 MHz 2450 MHz dB m 41 43 42 41 Noi se Fi gure f f f f = = = = 850 MHz 1960 MHz 2140 MHz 2450 MHz dB D evi ce C urrent V cc = 5 V OIP3 NF ID PDISS Operati ng D i ssi pated Power Rth, j-l Thermal Resi stance (juncti on - lead) mA 24 12.5 39 25 25 25 25 18.4 13.6 13.5 12.8 4.5 4.8 5.0 5.7 90 Max. 115 mW 575 ° C /W 70 15 2.0:1 6.3 135 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-102915 Rev D SXA-389B ¼ W GaAs HBT Amplifier 850 MHz Application Circuit Data, VCC= 5V, ID= 115mA Note: Tuned for Output IP3 Gain vs. Frequency 20 28 18 26 16 dB dBm P1dB vs. Frequency 30 24 14 25C 85C 25C 12 85C 22 -40 C -40C 10 20 0.8 0.85 0.9 0.95 0.8 0.85 0.9 0 .9 5 GHz GHz Input/Output Return Loss, Isolation vs. Frequency, T=25°C Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 0 45 -5 43 -10 dBm dB -15 -20 39 -25 25 C 85 C S 11 -30 37 S 12 S 22 -35 -4 0C 35 -40 0 .8 45 0.8 5 0.9 0 .8 0 .9 5 0.8 5 0.9 0 .95 GHz GHz Third Order Intercept vs. Tone Power Frequency = 850 MHz 880 MHz Adjacent Channel Power vs. Channel Output Power -4 0 43 Adjacent Channel Power (dBc) 25C 85C -40C dBm 41 41 39 37 35 -4 5 -5 0 -5 5 -6 0 -6 5 25C -7 0 85C -4 0 C -7 5 0 2 4 6 8 10 12 14 16 18 10 POUT per tone (dBm) 303 S. Technology Court, Broomfield, CO 80021 12 14 16 18 20 Channel Output Power (dBm) IS-95, 9 Channels Forward Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-102915 Rev D SXA-389B ¼ W GaAs HBT Amplifier 1960 MHz Application Circuit Data, VCC= 5V, ID= 115mA Note: Tuned for Output IP3 Gain vs. Frequency P1dB vs. Frequency 30 20 28 18 26 16 25C 85C dB dBm -40C 24 14 2 5C 8 5C 22 12 -40C 20 1 .9 3 1 .94 1.95 1.9 6 1 .97 1.98 10 1.93 1.9 9 1.95 1.96 1.97 1.98 GHz GHz Input/Output Return Loss, Isolation vs. Frequency, T=25°C Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 1.99 45 0 S11 S12 S22 -5 43 dBm -10 dB 1.94 -15 41 39 -20 25C 85C 37 -25 -40C -30 1 .93 1 .94 1.9 5 1.9 6 1.9 7 1 .9 8 35 1.93 1 .9 9 1.95 1.96 1.97 1.98 GHz Third Order Intercept vs. Tone Power Frequency = 1.96 GHz 1960 MHz Adjacent Channel Power vs. Channel Output Power 47 1.99 Adjacent Channel Power (dBc) -40 25C 85C 45 -40C 43 dBm 1.94 GHz 41 39 37 35 -45 -50 -55 -60 25C -65 85C -70 -40C -75 0 2 4 6 8 10 12 14 16 18 10 14 16 18 20 Channel Output Power (dBm) IS-95, 9 Channels Forward POUT per tone (dBm) 303 S. Technology Court, Broomfield, CO 80021 12 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-102915 Rev D SXA-389B ¼ W GaAs HBT Amplifier 2140 MHz Application Circuit Data, VCC= 5V, ID= 115mA Note: Tuned for Output IP3 Gain vs. Frequency P1dB vs. Frequency 30 20 28 18 26 16 85C -40C dB dBm 25C 14 24 25C 85C -40C 22 20 2.11 2.12 2.13 2.14 2.15 2.16 12 10 2.11 2.17 2.12 2.13 2.14 2.15 2.16 2.17 GHz GHz Input/Output Return Loss, Isolation vs. Frequency, T=25°C Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 45 0 S11 -5 S12 S22 43 dBm dB -10 -15 41 39 -20 25C 85C 37 -25 -40C -30 2 .11 2 .12 2 .13 2 .14 2 .15 2 .16 35 2.11 2 .17 2.12 2.13 GHz 2.15 2.16 2.17 GHz Third Order Intercept vs. Tone Power Frequency = 2.14 GHz 2140 MHz Adjacent Channel Power vs. Channel Output Power -40 Adjacent Channel Power (dBc) 45 43 dBm 2.14 41 39 25C 85C -40C 37 35 -45 -50 -55 25C 85C -40C -60 -65 0 2 4 6 8 10 12 14 16 18 10 POUT per tone (dBm) 303 S. Technology Court, Broomfield, CO 80021 12 14 16 18 Channel Output Power (dBm) W-CDMA, 64 DPCH + Overhead Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-102915 Rev D SXA-389B ¼ W GaAs HBT Amplifier 2450 MHz Application Circuit Data, VCC= 5V, ID= 115mA Note: Tuned for Output IP3 Gain vs. Frequency 20 28 18 26 16 25C 85C -40C dB dBm P1dB vs. Frequency 30 24 14 25C 85C 22 12 -40C 20 10 2.4 2.42 2.44 2.46 2.48 2.5 2.4 2.42 2.44 2.46 GHz Input/Output Return Loss, Isolation vs. Frequency, T=25°C Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 0 2.5 45 S 11 -5 25C S 12 S 22 -10 43 85C -40C -15 dBm dB 2.48 GHz -20 41 39 -25 37 -30 -35 35 2.4 2.42 2.44 2.46 2.48 2.5 2.4 GHz 2.42 2.44 2.46 2.48 2.5 GHz Third Order Intercept vs. Tone Power Frequency = 2.45 GHz 45 25C 43 85C dBm -40C 41 39 37 35 0 2 4 6 8 10 12 14 16 18 POUT per tone (dBm) 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 5 http://www.sirenza.com EDS-102915 Rev D SXA-389B ¼ W GaAs HBT Amplifier Vc c Application Schematic for 850 MHz, 2450 MHz C1 C2 C3 L1 C4 C7 Z=50 Ω , EL1 R F in Z=50 Ω , EL3 ° R F o ut ° C5 C6 Ref. Des. Vendor Series 850 MHz 2450 MHz Ref. Des. Vendor Series 850 MHz 2450 MHz C1 Matsuo 267M3502104K 0.1uF 10% 0.1uF 10% C6 Rohm MCH18 3.9pF ±0.25pF 1.0pF ±0.25pF C2 Rohm MCH18 1000pF 5% 1000pF 5% C6 Position 1 2 C 3, C 7 Rohm MCH18 47pF 5% 22pF 5% L1 33nH 5% 15nH 5% C4 Rohm MCH18 47pF 5% 1.2pF ±0.25pF E L1 15 76 C5 Rohm MCH18 5.6pF ±0.25pF - E L3 7.2 31.5 Toko LL1608-FS Evaluation Board Layout for 850 MHz, 2450 MHz RFout RFin + C1 C2 C3 L1 C4 C5 1 C7 2 C6 SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 6 http://www.sirenza.com EDS-102915 Rev D SXA-389B ¼ W GaAs HBT Amplifier Vc c Application Schematic for 1960 MHz, 2140 MHz C1 C2 C3 L1 C4 C7 Z=50 Ω , E L1 R F in Z=50 Ω , EL3 ° R F o ut ° C6 Ref. Des. Vendor Series 1960/2140 MHz Ref. Des. Vendor Series 1960/2140 MHz C1 Matsuo 267M3502104K 0.1uF 10% C6 Rohm MCH18 1.0pF ±0.25pF C2 Rohm MCH18 1000pF 5% L1 Toko LL1608-FS 18nH 5% C 3, C 7 Rohm MCH18 22pF 5% E L1 35 C4 Rohm MCH18 2.2pF ±0.25pF E L3 30 C5 Rohm MCH18 - Evaluation Board Layout for 1960 MHz, 2140 MHz RFout RFin + C1 C2 C3 L1 Jumper C4 C7 C6 SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 7 http://www.sirenza.com EDS-102915 Rev D SXA-389B ¼ W GaAs HBT Amplifier Part Number Ordering Information Absolute Maximum Ratings Parameter Part Number SXA-389B SXA-389BZ Absolute Limit Max. Supply Current (ID) 240 mA Max. Device Voltage (VCC) 6.0 V Max. Power Dissipation 1500 mW Max. RF Input Power 100 mW Max. Junction Temp. (TJ) Devices Per Reel 1000 1000 Reel Size 7" 7" +165 ºC Operating Lead Temp. (TL) -40 to +85 ºC Max. Storage Temp. +150 ºC Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVCC (max) < (TJ - TL)/Rth,j-l ESD: Class 1B (Passes 500V ESD Pulse) Appropriate precautions in handling, packaging and testing devices must be observed. Pin Description Pin # Function 1 B a se 2 GND & Emi tter 3 C ollector 4 D escription B a se P i n C onnecti on to ground. Use vi a holes to reduce lead i nductance. Place vi as as close to ground leads as possi ble. C ollector Pi n GND & Emi tter Same as Pi n 2 Part Identification Marking 4 4 XA3B A3BZ Recommended Mounting Configuration for Optimum RF and Thermal Performance 2 3 1 2 3 1 2 3 1 2 Ground Plane 1 3 Plated Thru Holes (0.020" DIA) See Application Note AN-075 SXA-389B for Package Outline Drawing Machine Screws (Optional) 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC 8 http://www.sirenza.com EDS-102915 Rev D