N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 170 V Continuous Drain Current at Tamb=25°C ID 160 mA Pulsed Drain Current IDM 2 A Gate Source Voltage VGS ± 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current(1) ID(on) Static Drain-Source On-State Resistance (1) RDS(on) MAX. 170 UNIT CONDITIONS. V ID=10µ A, VGS=0V 100 nA VGS=± 15V, VDS=0V 10 50 µA µA VDS=170 V, VGS=0 VDS=140 V, VGS=0V, T=50°C(2) mA VDS=3V, VGS=3.3V Ω Ω VGS=3.3V,ID=100mA VGS=3V,ID=30mA 100 23 23 (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% PAGE NO