ETC SGA-6286

Product Description
Stanford Microdevices’ SGA-6286 is a high performance SiGe
Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
configuration featuring 1 micron emitters provides high FT and
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 75mA , the SGA-6286 typically provides +35 dBm output
IP3, 13.8 dB of gain, and +19 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
SGA-6286
DC-5500 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
• High Gain : 12.4 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented SiGe Technology
Gain & Return Loss vs. Freq. @T L=+25°C
-8
Gain (dB)
16
ORL
12
-16
IRL
GAIN
8
-24
-32
4
Return Loss (dB)
0
20
-40
0
0.00
1.00
2.00
3.00
4.00
Frequency (GHz)
Sy mbol
5.00
6.00
Applications
• Cellular, PCS, CDPD
• Wireless Data, SONET
• Satellite
Units
Frequency
Min.
Ty p.
Max.
dB
dB
dB
850 M Hz
1950 M Hz
2400 M Hz
12.5
13.8
12.4
11.2
15.2
Output Pow er at 1dB Compression
dBm
dBm
850 M Hz
1950 M Hz
19.0
18.5
Output Third Order Intercept Point
(Pow er out per tone = 0dBm)
dBm
dBm
850 M Hz
1950 M Hz
35.0
33.0
Bandw idth Determined by Return Loss (<-10dB)
M Hz
G
P1dB
OIP3
IRL
Parameter
• Operates From Single Supply
• Low Thermal Resistance Package
Small Signal Gain
5500
Input Return Loss
dB
1950 M Hz
14.6
Output Return Loss
dB
1950 M Hz
20.2
NF
Noise Figure
dB
1950 M Hz
4.3
VD
Device Voltage
V
RTh
Thermal Resistance
ORL
Test Conditions:
VS = 8 V
RBIAS = 51 Ohms
°C/W
ID = 75 mA Typ.
TL = 25ºC
3.6
4.0
4.4
97
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-100613 Rev B
Preliminary
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Sy mbol
G
Parameter
Small Signal Gain
Unit
100
Frequency
(MHz)
Frequency
Frequency
(MHz)(MHz)
500
850
1950
2400
3500
dB
14.0
13.9
13.8
12.4
11.2
9.6
28.1
OIP3
Output Third Order Intercept Point
dBm
37.0
36.0
35.0
33.0
31.4
P1dB
Output Pow er at 1dB Compression
dBm
18.7
19.0
19.0
17.7
16.8
15.2
IRL
Input Return Loss
dB
18.8
17.4
15.8
14.6
15.5
20.6
ORL
Output Return Loss
dB
35.7
36.3
23.8
13.9
13.4
16.4
S12
Reverse Isolation
dB
18.4
18.6
18.8
18.8
18.5
17.0
NF
Noise Figure
dB
4.0
3.9
3.9
4.3
4.5
4.8
Test Conditions:
VSS== 88 V
V
V
RBIAS
= 51 Ohms
R
BIAS= 39 Ohms
75 mA
mA Typ.
Typ.
IIDD == 80
25ºC
TTLL == 25ºC
OIP33 Tone
Tone Spacing
Spacing == 11 MHz,
MHz, Pout
Pout per
per tone
tone == 00 dBm
dBm
OIP
50 Ohms
Ohms
ZZSS== ZZLL== 50
Absolute Maximum Ratings
Noise Figure vs. Frequency
Noise Figure (dB)
VD= 4.0 V, ID= 75 mA
6.0
Parameter
Absolute Limit
5.0
Max. Device Current (ID)
150 mA
4.0
3.0
TL=+25ºC
2.0
1.0
Max. Device Voltage (VD)
6V
Max. RF Input Pow er
+16 dBm
Max. Junction Temp. (TJ)
+150°C
Operating Temp. Range (TL)
-40°C to +85°C
Max. Storage Temp.
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage.
0.0
0
1
2
3
Frequency (GHz)
4
5
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TL)/Rth
P1dB vs. Frequency
OIP3 vs. Frequency
VD= 4.0 V, ID= 75 mA
VD= 4.0 V, ID= 75 mA
40
20
TL
+25°C
18
-40°C
+85°C
P1dB(dBm)
OIP3(dBm)
36
32
28
16
14
+25°C
24
12
20
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
TL
0.0
Frequency (GHz)
726 Palomar Ave., Sunnyvale, CA 94085
0.5
1.0
1.5
2.0
2.5
-40°C
+85°C
3.0
3.5
Frequency (GHz)
Phone: (800) SMI-MMIC
2
http://www.stanfordmicro.com
EDS-100613 Rev B
Preliminary
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
S21 vs. Frequency
S11 vs. Frequency
VD= 4.0 V, ID= 75 mA
20
-5
+25°C
-40°C
+85°C
TL
16
TL
-10
S11(dB)
12
S21(dB)
VD= 4.0 V, ID= 75 mA
8
4
-15
-20
-25
-30
0
-35
0
1
2
3
4
Frequency (GHz)
5
6
0
1
S12 vs. Frequency
5
6
VD= 4.0 V, ID= 75 mA
-5
-10
S22(dB)
-10
S12(dB)
2
3
4
Frequency (GHz)
S22 vs. Frequency
VD= 4.0 V, ID= 75 mA
-5
-15
-20
+25°C
-40°C
+85°C
TL
-25
-15
-20
-25
+25°C
-40°C
+85°C
TL
-30
-35
-30
0
1
2
3
4
Frequency (GHz)
5
0
6
VD vs. ID over Temperature for fixed
VS= 8 V, RBIAS= 51 ohms *
90
1
2
3
4
Frequency (GHz)
5
6
VD vs. Temperature for Constant ID = 75 mA
4.60
85
4.40
VD (Volts)
+85°C
80
ID(mA)
+25°C
-40°C
+85°C
+25°C
75
-40°C
70
4.20
4.00
3.80
65
60
3.6
3.8
4.0
VD(Volts)
4.2
4.4
3.60
-40
-15
10
35
Temperature (°C)
60
85
* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.
726 Palomar Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.stanfordmicro.com
EDS-100613 Rev B
Preliminary
SGA-6286 DC-5500 MHz Cascadable MMIC Amplifier
SGA-6286 Basic Application Circuit
Application Circuit Element Values
R BIAS
VS
1 uF
1000
pF
500
850
1950
2400
3500
CB
220 pF
100 pF
68 pF
56 pF
39 pF
CD
100 pF
68 pF
22 pF
22 pF
15 pF
LC
68 nH
33 nH
22 nH
18 nH
15 nH
CD
LC
4
1 SGA-6286 3
RF in
RF out
CB
2
CB
Frequency (Mhz)
Reference
Designator
Recommended Bias Resistor Values for ID=75mA
Supply Voltage(VS)
RBIAS
8V
27
51
10 V
82
12 V
110
Note: RBIAS provides DC bias stability over temperature.
VS
1 uF
RBIAS
A62
CB
6V
1000 pF
CD
LC
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
CB
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an “A62” designator on
the top surface of the package.
3
4
A62
Pin #
Function
1
RF IN
RF input pin. This pin requires the use
of an external DC blocking capacitor
chosen for the frequency of operation.
2
GND
Connection to ground. Use via holes for
best performance to reduce lead
inductance as close to ground leads as
possible.
2
3
1
For package dimensions, refer to outline drawing at
www.stanfordmicro.com
Caution: ESD sensitive
RF OUT/ RF output and bias pin. DC voltage is
BIAS
present on this pin, therefore a DC
blocking capacitor is necessary for
proper operation.
4
GND
Sames as Pin 2
Part Number Ordering Information
Appropriate precautions in handling, packaging
and testing devices must be observed.
726 Palomar Ave., Sunnyvale, CA 94085
Description
Part Number
Reel Size
Devices/Reel
SGA-6286
13"
3000
Phone: (800) SMI-MMIC
4
http://www.stanfordmicro.com
EDS-100613 Rev B