PJ13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Swiching Regulator and Motor Control TO-220 ABSOLUTE MAXIMUM RATINGS (Ta= 25 ℃ ) Characteristic Symbol Rating Uint Collector Base Voltage Collector Emitter VCBO VCEO 700 400 V V VEBO 9 V Collector Current (DC) Ic 8 A Collector Current Ic 16 A Base Current IB 4 A Collector Dissipation Pc 80 W Junction Temperature Tj 150 ℃ Storage Temperature Tstg Voltage Emitter Base Voltage P in : 1. Base 2. Collector 3. Emitter (Pulse) -65 ~150 ORDERING INFORMATION ℃ Device Operating Temperature Package PJ13007CZ -20℃～+85℃ TO-220 ELECTRICAL CHARACTERISTICS(Ta= 25 ℃ ) Characteristic *Collector Emitter Sustaining Voltage Emitter Cutoff Current *DC Current Gain *Collector Emitter Saturation Voltage *Base Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Symbol VCEO(SUS) Test Condition Ic = 10mA, IB = 0 Typ Max 400 VEB =9V, Ic=0 hFE VCE =5V, Ic =2A 8 60 VCE =5V, Ic =5A 5 30 VCE (sat) VBE (sat) C OB 1 mA Ic =2A, IB =0.4A 1 V Ic =5A, IB =1A 2 V Ic =8A, IB =2A 3 V Ic =2A, IB =0.4A 1.2 V Ic =5A, IB =1A 1.6 V VCB =10V, f =0.1MHz VCE =10V, Ic =0.5A Turn On Time t on VCC =125V, Ic =5A Storage Time ts IB1 =IB2 =1A Fall Time tf 110 pF 4 MHz 1.6 μS 3 μS 0.7 μS Pulse Test: PW≤300 μS, Duty Cycle ≤2 % 1-2 Unit V IEBO fT Min 2002/01.rev.A PJ13007 NPN Epitaxial Silicon Transistor 2-2 2002/01.rev.A