STD13003L Semiconductor NPN Silicon Power Transistor Features • High speed switching • VCEO(sus)=400V • Suitable for Switching Regulator and Motor Control Ordering Information Type NO. Marking STD13003L STD13003 Outline Dimensions Package Code TO-92L unit : mm PIN Connections 1. Base 2. Collector 3. Emitter KST-I018-000 1 STD13003L Absolute maximum ratings (Tc=25℃) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 700 V Collector-Emitter voltage VCEO 400 V Emitter-base voltage VEBO 9 V Collector current (DC) IC 1.5 A Collector current (Pulse) ICP 3 A Base current (DC) IB 0.75 A Total Power dissipation (Ta=25℃) PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Tc=25℃) Characteristic Symbol Collector-Emitter sustaining voltage VCE(sus) IC=5mA, IB=0 400 - - V Emitter cut-off current IEBO VEB=9V, IC=0 - - 10 uA DC Current gain hFE* IC=0.5A, VCE=2V 8 - 40 IC=1A, VCE=2V 5 - - IC=0.5A, IB=0.1A - - 0.5 IC=1A, IB=0.25A - - 1 IC=1.5A, IB=0.5A - - 3 IC=0.5A, IB=0.1A - - 1 IC=1A, IB=0.25A - - 1.2 VCB=10V, IC=0.1A, f=1MHz 4 - - MHz VCB=10V, IE=0, f=0.1MHz - 21 - pF - - 1.1 - - 4 - - 0.7 Collector-Emitter saturation voltage Base-Emitter saturation voltage VCE(sat)* VBE(sat)* Transition frequency fT Output capacitance Cob Turn on Time ton Storage Time Fall Time tstg Test Condition VCC=125V,IC=1A IB1=-IB2=0.2A tf Min. Typ. Max. Unit V V ㎲ * Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse KST-I018-000 2 STD13003L Electrical Characteristic Curves Fig. 2 VBE(sat) , VCE(sat) - IC Fig. 1 IC - VCE Fig. 3 hFE-IC Fig. 4 Turn off time Fig. 6 Safe Operating Area Fig. 5 Turn on time KST-I018-000 3