ETC PJD882S

PJD882/PJD882S
NPN Epitaxial Silicon Transistor
AUDIO FREQ UENCY POWER AMPLIFIER LOW SPEED SWITCHING
•
•
•
Complement to PJB772
PW10ms,Duty Cycle50%Pulse Test
PW350µ s, Duty Cycle 2%
TO-92
TO-126
ABSOLUTE MAXIMUM RATINGS (T a = 25 ℃)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Bias Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
Collector Dissipation
(Ta=25℃)
Collector Dissipation
(Ta=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IC
IB
PC
PC
Tj
Tstg
Rating
40
30
5
3
7
0.6
10
1
150
-55~150
Unit
V
V
V
A
A
A
W
W
℃
℃
Pin : 1.Emitter
2.Collector
3.Base
ORDERING INFORMATION
Device
PJD882CT
PJD882CK
Operating Temperature
-20℃～+85℃
Package
TO-92
TO-126
ELECTRICAL CHARACTERISTICS(T a=25 ℃)
Characteristics
Symbol
Test condition
Min
Typ
Min
Unit
Collector Cutoff Current
ICBO
VCB=30V,IE =0
1
µA
Emitter Cutoff Current
IEBO
VEB=3V,IC=0
1
µA
hFE1
VCE =2V,IC=20mA
30
150
hFE2
VCE =2V,IC=1A
60
160
400
*Collector Emitter Saturation Voltage
VCE(SAT)
IC=2A,IB=0.2A
0.3
0.5
V
*Base Emitter Saturation Voltage
VBE(SAT)
IC=2A,IB=0.2A
1.0
2.0
V
VCE =5V,IC=0.1A
90
MHz
VCB=10V,IE =0
45
pF
*DC Current Gain
Current Gain Bandwidth Product
fT
Output Capacitance
Cob
f=1MHz
h FE(2) CLASSIFICATION
Classification
R
O
Y
G
hFE (2)
60-120
100-200
160-320
200-400
1-3
2002/01.rev.A
PJD882/PJD882S
NPN Epitaxial Silicon Transistor
.
STATIC CHARACTERISTIC
CURRENT GAIN-BANDWIDTH PRODUCT
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGE
SAFE OPERATING AREAS
COLLECTOR OUTPUT CAPACITANCE
DERATING CURVE OF SAFE OPERATING AREAS
POWER DERATING
DC CURRENT GAIN
2-3
2002/01.rev.A
PJD882/PJD882S
NPN Epitaxial Silicon Transistor
3-3
2002/01.rev.A