Preliminary Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-5489 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency 25 20 dB 15 Product Features • DC-4000 MHz Operation • Single Voltage Supply • High Output Intercept: +30.8dBm typ. at 850 MHz • Low Current Draw: 60mA at 3.3V typ. • Low Noise Figure: 2.8dB typ. at 850 MHz 10 5 0 Symbol 1 2 3 Frequency GHz 4 5 Applications • Oscillator Amplifiers • PA for Low Power Applications • IF/ RF Buffer Amplifier • Drivers for CATV Amplifiers Parameters: Test Conditions: Z0 = 50 Ohms, ID = 60 mA, T = 25oC Units Min. Typ. Output Pow er at 1dB Compression f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm 16.0 14.6 13.5 IP3 Third Order Intercept Point Pow er out per tone = 0 dBm f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm 30.8 27.4 25.7 S21 Small Signal Gain f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 19.7 17.9 17.1 MHz 2100 P1dB BW3dB 3dB Bandw idth MHz 4000 S11 Input VSWR f = DC-5000 MHz - 1.50:1 S22 Output VSWR f = DC-5000 MHz - 1.50:1 S12 Reverse Isolation f = 850 MHz f = 1950 MHz f = 2400 MHz dB dB dB 23.5 23.5 23.1 NF Noise Figure, ZS = 50 Ohms f = 1950 MHz dB 2.4 VD Device Voltage Bandw idth Rth,j-l (Determined by S11, S22 Values) V o Thermal Resistance (junction - lead) C/W 3.1 3.3 Max. 4.1 97 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l Parameter Supply C urrent Value U nit 120 mA Operati ng Temperature -40 to +85 C Maxi mum Input Power +10 dB m Storage Temperature Range Operati ng Juncti on Temperature -40 to +150 C +150 C Key parameters, at typical operating frequencies: Typical Parameter 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 522 Almanor Ave., Sunnyvale, CA 94086 Test Condition 25oC Unit 20.2 3.0 31.3 16.3 20.3 23.3 dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dB m dB dB 19.7 2.8 30.8 16.0 17.5 23.5 dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dB m dB dB 17.9 2.4 27.4 14.6 15.2 23.5 dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dB m dB dB 17.1 3.7 25.7 13.5 14.7 23.1 dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dB m dB dB Phone: (800) SMI-MMIC 2 (ID = 60 mA, unless otherw ise noted) http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier Pin # Function 1 RF IN 2 3 4 Description Device Schematic RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. RF OUT/Vcc RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. GND Same as Pin 2. Application Schematic for Operation at 850 MHz R ecommended B ias R esistor Values Supply Voltage(Vs) 5V 7.5V 9V 12V R bias (Ohms) 25 67 92 142 1uF 68pF 25 ohms VS For 7.5V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 33nH 50 ohm microstrip 50 ohm microstrip 2 1 3 100pF 100pF 4 Application Schematic for Operation at 1950 MHz 1uF 22pF 25 ohms VS 22nH 50 ohm microstrip 50 ohm microstrip 2 1 3 68pF 522 Almanor Ave., Sunnyvale, CA 94086 4 Phone: (800) SMI-MMIC 3 68pF http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier S21, ID =60mA, T=+25C S12, ID =60mA, T=+25C 25 0 20 -10 dB 15 dB -20 10 -30 5 -40 0 1 2 3 4 5 0 1 2 3 4 5 4 5 Frequency GHz Frequency GHz S11, ID =60mA, T=+25C S22, ID =60mA, T=+25C 0 0 -10 -10 dB -20 dB -20 -30 -30 -40 -40 0 1 2 3 4 5 0 1 2 3 Frequency GHz Frequency GHz S22, ID=60mA, Ta=25C S11, ID=60mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier S21, ID =60mA, T=-40C dB S12, ID =60mA, T=-40C 25 0 20 -10 15 dB -20 10 -30 -40 5 0 1 2 3 4 5 0 1 Frequency GHz 2 3 4 5 4 5 Frequency GHz S11, ID =60mA, T=-40C S22, ID =60mA, T=-40C 0 0 -10 -10 -20 dB -20 dB -30 -30 -40 -50 -40 0 1 2 3 4 5 0 1 2 3 Frequency GHz Frequency GHz S22, ID=60mA, Ta= -40C S11, ID=60mA, Ta= -40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94086 Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier S21, ID =60mA, T=85C dB S12, ID =60mA, T=85C 25 0 20 -10 15 dB -20 10 -30 5 -40 0 1 2 3 4 0 5 1 Frequency GHz 3 4 5 4 5 Frequency GHz S11, ID =60mA, T=85C dB 2 S22, ID =60mA, T=85C 0 0 -10 -10 -20 dB -30 -20 -30 -40 -40 0 1 2 3 4 5 0 Frequency GHz 1 2 3 Frequency GHz S11, ID=60mA, Ta=85C S22, ID=60mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94086 6 GHz Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier Caution ESD Sensitive: Part Number Ordering Information Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Reel Size Devices/Reel SGA-5489 13" 3000 Package Dimensions Outline Drawing Part Symbolization The part will be symbolized with a “A54” designator on the top surface of the package. 1 A54 2 4 3 PCB Pad Layout 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier Component Tape and Reel Packaging Tape Dimensions For 89 Outline C avi ty Length Wi dth D epth Pi tch Bottom Hole D i ameter A B K P1 D1 Siz e (mm)leel 4.91 +/- 0.01 4.52 +/- 0.01 1.90 +/- 0.01 8.00 +/- 0.01 1.60 +/- 0.10 Perforati on D i ameter Pi tch Posi ti on D0 P0 E 1.55 +/- 0.05 4.00 +/- 0.01 1.75 +/- 0.01 C over Tape Wi dth Tape Thi ckness C t 9.10 +/- 0.25 0.05 +/- 0.01 C arri er Tape Wi dth Thi ckness W T 12.0 +/- 0.03 0.30 +/- 0.05 D i stance C avi ty to Perforati on (Wi dth D i recti on) C avi ty to Perforati on (Length D i recti on) F 5.50 +/- 0.10 P2 2.00 +/- 0.10 D escription 522 Almanor Ave., Sunnyvale, CA 94086 Symbol Phone: (800) SMI-MMIC 8 http://www.stanfordmicro.com EDS-100618 Rev B