ETC SGA-9189

Preliminary
Preliminary
Product Description
SGA-9189
Sirenza Microdevices’ SGA-9189 is a high performance
amplifier designed for operation from DC to 3 GHz.
With optimal matching at 2 GHz, OIP3=39 dBm and
P1dB=26 dBm. This RF device uses the latest Silicon
Germanium Heterostructure Bipolar Transistor (SiGe HBT)
process. The SGA-9189 is cost-effective for applications
requiring high linearity even at moderate biasing levels.
It is well suited for operation at both 5V and 3V.
Silicon Germanium HBT Amplifier
Product Features
Gmax (dB)
25
23
21
19
17
15
13
11
9
7
5
44
42
40
38
36
34
32
30
28
26
24
OIP3
Gmax
P1dB
OIP3, P1dB (dBm)
Typical Gmax, OIP3, P1dB @ 5V,180mA
0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5
Frequency (GHz)
•
•
•
•
•
•
•
DC-3 GHz Operation
39 dBm Ouput IP3 Typical at 1.96 GHz
12 dB Gain Typical at 1.96 GHz
26 dBm P1dB Typical at 1.96 GHz
2.5 dB NF Typical at 0.9 GHz
Cost Effective
3-5 V Operation
Applications
•
•
•
•
Wireless Infrastructure Driver Amplifiers
CATV Amplifiers
Wireless Data, WLL Amplifiers
AN-021 contains detailed application circuits
Device Characteristics, T = 25ºC
VCE = 5V, ICQ =180mA (unless otherw ise noted)
Test Frequency
[1] 100% Tested
[2] Sample Tested
Maximum Available Gain
ZS=ZS*, ZL=ZL*
f = 900 MHz
f = 1960 MHz
dB
20.5
13.2
Power Gain
ZS=ZSOPT, ZL=ZLOPT
f = 900 MHz [1]
f = 1960 MHz [2]
dB
17.8
11.1
P 1dB
Output 1dB Compression Point
ZS=ZSOPT, ZL=ZLOPT
f = 900 MHz
f = 1960 MHz [2]
dB m
26.3
25.6
OIP3
Output Third Order Intercept Point
ZS=ZSOPT, ZL=ZLOPT, POUT= +13 dBm per tone
f = 900 MHz
f = 1960 MHz [2]
dB m
38.8
38.9
Noise Figure
ZS=ZSOPT, ZL=ZLOPT
f = 900 MHz
f = 1960 MHz
dB
2.5
3.9
Symbol
GMAX
G
NF
B V C EO
Collector - Emitter Breakdown Voltage
Units
V
Min.
Typ.
7.5
8.5
120
180
Max.
hFE
DC current gain
Rth
Thermal Resistance (junction-to-lead)
VCE
Device Operating Voltage (collector-to-emitter)
V
5.5
ICE
Device Operating Current (collector-to-emitter)
mA
190
ºC/W
300
47
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not
authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-101497 Rev B
Preliminary
SGA-9189 SiGe HBT Amplifier
Absolute Maximum Ratings
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the device operating conditions
should also satisfy the following expression:
Parameter
PDC - POUT < (TJ - TL) / RTH
where:
PDC = ICE * VCE (W)
POUT = RF Output Power (W)
TJ = Junction Temperature (C)
TL = Lead Temperature (pin 4) (C)
RTH = Thermal Resistance (C/W)
Symbol
Value
Base C urrent
IB
5
mA
C ollector C urrent
ICE
200
mA
C ollector - Emi tter Voltage
V C EO
7.0
V
C ollector - Base Voltage
V C BO
20
V
Emi tter - Base Voltage
V EBO
4.8
V
Operati ng Temperature
TOP
-40 to +85
C
Storage Temperature Range
Tstor
-40 to +150
C
TJ
+150
C
PDISS
1.4
W
Operati ng Juncti on Temperature
Power D i ssi pati on
U nit
Operati on of thi s devi ce beyond any one of these li mi ts may cause
permanent damage. For reli able conti nuous operati on, the devi ce
voltage and current must not exceed the maxi mum operati ng values
speci fi ed i n the table on page 1.
Typical Performance - Engineering Application Circuits (See AN-021)
1
2
Freq
(MHz )
VCE
(V)
ICQ
(mA)
P1dB OIP31
(dBm) (dBm)
Gain
(dB)
S11
(dB)
S 22
(dB)
NF
(dB)
ZSOPT
(Ω
Ω)
ZLOPT
(Ω
Ω)
945
5
184
26.2
38.1
18.3
-18
-16
2.5
6.8 - j0.85
16 + j5.9
1960
5
179
26.0
39.1
11.7
-15
-18
3.9
7.6 - j11.2
22.8 + j0.7
2140
5
180
25.5
38.4
11.8
-20
-20
2.6
18.1 + j3.4
23.8 - j9.0
2440
5
180
25.5
38.7
10.4
-20
-20
3.1
5.6 - j15.1
23.1 - j2.7
Gain
(dB)
S11
(dB)
S 22
(dB)
NF
(dB)
ZSOPT
(Ω
Ω)
ZLOPT
(Ω
Ω)
POUT= +10 dBm per tone for VCE=5V, 1 MHz tone spacing
Freq
(MHz )
VCE
(V)
ICQ
(mA)
P1dB OIP31
(dBm) (dBm)
945
3
165
22.1
34.3
17.7
-18
-11
2.1
9.6 - j1.6
11.0 + j1.4
1960
3
162
22.4
35.0
11.8
-18
-16
2.2
7.8 - j13.1
19.3 - j2.9
2440
3
165
23.2
35.3
9.9
-20
-15
2.6
8.1 - j16.0
21.0 - j6.5
POUT= +6 dBm per tone for VCE=3V, 1 MHz tone spacing
Data above represents typical performance of the application circuits noted in Application Note AN-021.
Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The
application note also includes biasing instructions and other key issues to be considered. For the latest
application notes please visit our site at www.sirenza.com or call your local sales representative.
C
B
ZLOPT
ZSOPT
522 Almanor Ave., Sunnyvale, CA 94085
E
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101497 Rev B
Preliminary
SGA-9189 SiGe HBT Amplifier
De-embedded S-Parameters (ZS=ZL=50 Ohms, VCE=5V, ICQ=185mA, 25° C)
Insertion Gain & Isolation
35
-5
25
-15
Isolation
15
-25
Gmax
5
-35
Gain
-5
Gain vs. Temp (dB)
5
Isolation (dB)
Gain (dB)
45
1
2
3
4
5
6
7
20
15
10
5
0
T = -40, 25, 85°C
-5
-10
-45
0
Insertion Gain vs Temperature
30
25
8
0
1
2
5
S22 vs Frequency
1.0
1.0
4 GHz
2.0
4 GHz
3 GHz
7
8
5 GHz
3 GHz
2 GHz
0.2
5.0
5.0
2 GHz
8 GHz
1 GHz
0.2
6
2.0
0.5
5 GHz
0.0
4
S11 vs Frequency
0.5
0.2
3
Frequency (GHz)
Frequency (GHz)
8 GHz
1 GHz
0.5
1.0
2.0
5.0
0.0
inf
0.2
0.5
1.0
2.0
5.0
inf
S11
0.2
0.2
5.0
5.0
S22
50 MHz
50 MHz
0.5
2.0
0.5
2.0
1.0
1.0
Note: S-parameters are de-embedded to the device leads with Z S=Z L=50Ω. The data represents typical performace of the device.
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
DC-IV Curves
400
350
Ib = 0.4 - 3.6 mA , 0.4 mA steps
T=25C
IC (mA)
300
250
200
150
100
50
0
0
2
4
6
8
VCE (V)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-101497 Rev B
Preliminary
SGA-9189 SiGe HBT Amplifier
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Part Number Ordering Information
Pin Description
B a se
2
Emitter
3
Collector
4
Emitter
Part Number
Reel Siz e
Devices/Reel
SGA-9189
7"
1000
RF Input
Connection to ground. Use via holes to reduce lead
inductance. Place vias as close to ground leads as possible.
RF Output
Same as Pin 2
Part Symbolization
The part will be symbolized with the “P1”
designator and a dot signifying pin 1 on the top
surface of the package.
Package Dimensions
Mounting and Thermal Considerations
It is very important that adequate heat sinking be
provided to minimize the device junction
temperature. The following items should be
implemented to maximize MTTF and RF
performance.
3
.161
.177 .068
.016
.019 .118
1
1. Multiple solder-filled vias are required directly
below the ground tab (pin 4). [CRITICAL]
2. Incorporate a large ground pad area with
multiple plated-through vias around pin 4 of the
device. [CRITICAL]
3. Use two point board seating to lower the thermal
resistance between the PCB and mounting plate.
Place machine screws as close to the ground tab
(pin 4) as possible. [RECOMMENDED]
4. Use 2 ounce copper to improve the PCB’s heat
spreading capability. [RECOMMENDED]
2
1
Description
P1
Function
4
Pin #
.096
.059
.041
.015
DIMENSIONS ARE IN INCHES
Recommended Mounting Configuration for
Optimum RF and Thermal Performance
Ground Plane
Plated Thru
Holes
(0.020" DIA)
SOT-89
Package
Machine
Screws
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
4
http://www.sirenza.com
EDS-101497 Rev B