Preliminary Preliminary Product Description SGA-9189 Sirenza Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is cost-effective for applications requiring high linearity even at moderate biasing levels. It is well suited for operation at both 5V and 3V. Silicon Germanium HBT Amplifier Product Features Gmax (dB) 25 23 21 19 17 15 13 11 9 7 5 44 42 40 38 36 34 32 30 28 26 24 OIP3 Gmax P1dB OIP3, P1dB (dBm) Typical Gmax, OIP3, P1dB @ 5V,180mA 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 Frequency (GHz) • • • • • • • DC-3 GHz Operation 39 dBm Ouput IP3 Typical at 1.96 GHz 12 dB Gain Typical at 1.96 GHz 26 dBm P1dB Typical at 1.96 GHz 2.5 dB NF Typical at 0.9 GHz Cost Effective 3-5 V Operation Applications • • • • Wireless Infrastructure Driver Amplifiers CATV Amplifiers Wireless Data, WLL Amplifiers AN-021 contains detailed application circuits Device Characteristics, T = 25ºC VCE = 5V, ICQ =180mA (unless otherw ise noted) Test Frequency [1] 100% Tested [2] Sample Tested Maximum Available Gain ZS=ZS*, ZL=ZL* f = 900 MHz f = 1960 MHz dB 20.5 13.2 Power Gain ZS=ZSOPT, ZL=ZLOPT f = 900 MHz [1] f = 1960 MHz [2] dB 17.8 11.1 P 1dB Output 1dB Compression Point ZS=ZSOPT, ZL=ZLOPT f = 900 MHz f = 1960 MHz [2] dB m 26.3 25.6 OIP3 Output Third Order Intercept Point ZS=ZSOPT, ZL=ZLOPT, POUT= +13 dBm per tone f = 900 MHz f = 1960 MHz [2] dB m 38.8 38.9 Noise Figure ZS=ZSOPT, ZL=ZLOPT f = 900 MHz f = 1960 MHz dB 2.5 3.9 Symbol GMAX G NF B V C EO Collector - Emitter Breakdown Voltage Units V Min. Typ. 7.5 8.5 120 180 Max. hFE DC current gain Rth Thermal Resistance (junction-to-lead) VCE Device Operating Voltage (collector-to-emitter) V 5.5 ICE Device Operating Current (collector-to-emitter) mA 190 ºC/W 300 47 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.sirenza.com EDS-101497 Rev B Preliminary SGA-9189 SiGe HBT Amplifier Absolute Maximum Ratings MTTF is inversely proportional to the device junction temperature. For junction temperature and MTTF considerations the device operating conditions should also satisfy the following expression: Parameter PDC - POUT < (TJ - TL) / RTH where: PDC = ICE * VCE (W) POUT = RF Output Power (W) TJ = Junction Temperature (C) TL = Lead Temperature (pin 4) (C) RTH = Thermal Resistance (C/W) Symbol Value Base C urrent IB 5 mA C ollector C urrent ICE 200 mA C ollector - Emi tter Voltage V C EO 7.0 V C ollector - Base Voltage V C BO 20 V Emi tter - Base Voltage V EBO 4.8 V Operati ng Temperature TOP -40 to +85 C Storage Temperature Range Tstor -40 to +150 C TJ +150 C PDISS 1.4 W Operati ng Juncti on Temperature Power D i ssi pati on U nit Operati on of thi s devi ce beyond any one of these li mi ts may cause permanent damage. For reli able conti nuous operati on, the devi ce voltage and current must not exceed the maxi mum operati ng values speci fi ed i n the table on page 1. Typical Performance - Engineering Application Circuits (See AN-021) 1 2 Freq (MHz ) VCE (V) ICQ (mA) P1dB OIP31 (dBm) (dBm) Gain (dB) S11 (dB) S 22 (dB) NF (dB) ZSOPT (Ω Ω) ZLOPT (Ω Ω) 945 5 184 26.2 38.1 18.3 -18 -16 2.5 6.8 - j0.85 16 + j5.9 1960 5 179 26.0 39.1 11.7 -15 -18 3.9 7.6 - j11.2 22.8 + j0.7 2140 5 180 25.5 38.4 11.8 -20 -20 2.6 18.1 + j3.4 23.8 - j9.0 2440 5 180 25.5 38.7 10.4 -20 -20 3.1 5.6 - j15.1 23.1 - j2.7 Gain (dB) S11 (dB) S 22 (dB) NF (dB) ZSOPT (Ω Ω) ZLOPT (Ω Ω) POUT= +10 dBm per tone for VCE=5V, 1 MHz tone spacing Freq (MHz ) VCE (V) ICQ (mA) P1dB OIP31 (dBm) (dBm) 945 3 165 22.1 34.3 17.7 -18 -11 2.1 9.6 - j1.6 11.0 + j1.4 1960 3 162 22.4 35.0 11.8 -18 -16 2.2 7.8 - j13.1 19.3 - j2.9 2440 3 165 23.2 35.3 9.9 -20 -15 2.6 8.1 - j16.0 21.0 - j6.5 POUT= +6 dBm per tone for VCE=3V, 1 MHz tone spacing Data above represents typical performance of the application circuits noted in Application Note AN-021. Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The application note also includes biasing instructions and other key issues to be considered. For the latest application notes please visit our site at www.sirenza.com or call your local sales representative. C B ZLOPT ZSOPT 522 Almanor Ave., Sunnyvale, CA 94085 E Phone: (800) SMI-MMIC 2 http://www.sirenza.com EDS-101497 Rev B Preliminary SGA-9189 SiGe HBT Amplifier De-embedded S-Parameters (ZS=ZL=50 Ohms, VCE=5V, ICQ=185mA, 25° C) Insertion Gain & Isolation 35 -5 25 -15 Isolation 15 -25 Gmax 5 -35 Gain -5 Gain vs. Temp (dB) 5 Isolation (dB) Gain (dB) 45 1 2 3 4 5 6 7 20 15 10 5 0 T = -40, 25, 85°C -5 -10 -45 0 Insertion Gain vs Temperature 30 25 8 0 1 2 5 S22 vs Frequency 1.0 1.0 4 GHz 2.0 4 GHz 3 GHz 7 8 5 GHz 3 GHz 2 GHz 0.2 5.0 5.0 2 GHz 8 GHz 1 GHz 0.2 6 2.0 0.5 5 GHz 0.0 4 S11 vs Frequency 0.5 0.2 3 Frequency (GHz) Frequency (GHz) 8 GHz 1 GHz 0.5 1.0 2.0 5.0 0.0 inf 0.2 0.5 1.0 2.0 5.0 inf S11 0.2 0.2 5.0 5.0 S22 50 MHz 50 MHz 0.5 2.0 0.5 2.0 1.0 1.0 Note: S-parameters are de-embedded to the device leads with Z S=Z L=50Ω. The data represents typical performace of the device. De-embedded s-parameters can be downloaded from our website (www.sirenza.com). DC-IV Curves 400 350 Ib = 0.4 - 3.6 mA , 0.4 mA steps T=25C IC (mA) 300 250 200 150 100 50 0 0 2 4 6 8 VCE (V) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.sirenza.com EDS-101497 Rev B Preliminary SGA-9189 SiGe HBT Amplifier Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Pin Description B a se 2 Emitter 3 Collector 4 Emitter Part Number Reel Siz e Devices/Reel SGA-9189 7" 1000 RF Input Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. RF Output Same as Pin 2 Part Symbolization The part will be symbolized with the “P1” designator and a dot signifying pin 1 on the top surface of the package. Package Dimensions Mounting and Thermal Considerations It is very important that adequate heat sinking be provided to minimize the device junction temperature. The following items should be implemented to maximize MTTF and RF performance. 3 .161 .177 .068 .016 .019 .118 1 1. Multiple solder-filled vias are required directly below the ground tab (pin 4). [CRITICAL] 2. Incorporate a large ground pad area with multiple plated-through vias around pin 4 of the device. [CRITICAL] 3. Use two point board seating to lower the thermal resistance between the PCB and mounting plate. Place machine screws as close to the ground tab (pin 4) as possible. [RECOMMENDED] 4. Use 2 ounce copper to improve the PCB’s heat spreading capability. [RECOMMENDED] 2 1 Description P1 Function 4 Pin # .096 .059 .041 .015 DIMENSIONS ARE IN INCHES Recommended Mounting Configuration for Optimum RF and Thermal Performance Ground Plane Plated Thru Holes (0.020" DIA) SOT-89 Package Machine Screws 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.sirenza.com EDS-101497 Rev B