DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Abstract SGA-9289 Stanford Microdevices’ SGA-9289 is a high performance SiGe amplifier designed for operation from DC to 3500 MHz. The amplifier is manufactured using the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The process has a VBCEO=8V and an fT=25 GHz. The SiGe HBT process makes the SGA-9289 a very cost-effective solution for applications requiring high linearity at moderate biasing levels. This application note illustrates several application circuits for key frequency bands in the 800-2500 MHz spectrum. Silicon Germanium HBT Amplifier Introduction The application circuits were designed to achieve the optimum combination of P1dB and OIP3 while maintaining flat gain and reasonable return losses. Special consideration was given to insure amplifier stability at low frequencies where the device exhibits high gain. These designs were created to illustrate the general performance capabilities of the device under CW conditions. Users may wish to modify these designs to achieve optimum performance under specific input conditions and system requirements. The circuits contain only surface mountable devices and were designed with automated manufacturing requirements in mind. All recommended components are standard values available from multiple manufacturers. The components specified in the bill of materials (BOM) have known parasitics, which in some cases are critical to the circuit’s performance. Deviating from the recommended BOM may result in a performance shift due to varying parasitics – primarily in the inductors and capacitors. Biasing Techniques These SiGe HBT amplifiers exhibit a “soft” breakdown effect (VBCEO=7.5V minimum) which allows for large signal operation at VCE=5V. The user should insure that under large signal conditions the source and load impedances presented to the device don’t result in excessive collector currents near breakdown. Small signal operation with VCE<7V is acceptable. Product Features • • • • • DC-3500 MHz Operation High Output IP3, +41.5 dBm Typical at 1.96 GHz 11.0 dB Gain Typical at 1.96 GHz 28.6 dBm P1dB Typical at 1.96 GHz Cost Effective Applications • Wireless Infrastructure Driver Amplifiers • CATV Amplifiers • Wireless Data, WLL Amplifiers Absolute Maximum Ratings Parameter Symbol Value Unit Base Current IB 20 mA Collector Current IC 400 mA Collector - Emitter Voltage V C EO 7.0 V Collector - Base Voltage V C BO 18 V Emitter - Base Voltage V EBO 4.8 V Operating Temperature TOP -40 to +85 C Storage Temperature Range Tstor -40 to +150 C TJ +150 C Operating Junction Temperature The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits All HBT amplifiers are subject to device current variation due to the decreasing nature of the internal VBE with increasing temperature. In the absence of an active bias circuit or resistive feedback, the decreasing VBE will result in increased base and collector currents. As the collector current continues to increase under constant VCE conditions the device may eventually exceed its maximum dissipated power limit resulting in permanent device damage. The designs included in this application note contain passive bias circuits that stabilize the device current over temperature and desensitize the circuit to device process variation. The passive bias circuits used in these designs include a dropping resistor in the collector bias line and a voltage divider from collector-to-base. Using this scheme the amplifier can be biased from a single supply voltage. The collector-dropping resistor is sized to drop 2-3V depending on the desired VCE . The voltage divider from collector-to-base, in conjunction with the dropping resistor, will stabilize the device current over temperature. Configuring the voltage divider such that the shunt current is 5-10 times larger than the desired base current desensitizes the circuit to device process variation. These two feedback mechanisms are sufficient to insure consistent performance over temperature and device process variations. Note that the voltage drop is clearly dependent on the nominal collector current and can be adjusted to generate the desired VCE from a fixed supply rail. The user should test the circuit over the operational extremes to guarantee adequate performance if the feedback mechanisms are reduced. An active bias circuit can be implemented if the user does not wish to sacrifice the voltage required by the aforementioned passive circuit. There are various active bias schemes suitable for HBTs. The user should choose an active bias circuit that best meets his cost, complexity and performance requirements. Circuit Details SMDI will provide the detailed layout (AutoCad format) to users wishing to use the exact same layout and PCB material shown in the following circuits. The circuits recommended within this application note were designed using the following PCB stack up: Material: GETEKä ML200C Core thickness: 0.031” Copper cladding: 1oz both sides Dielectric constant: 4.1 Dielectric loss tangent: 0.0089 (@ 1 GHz) Customers not wishing to use the exact material and layouts shown in this application note can design their own PCB using the critical transmission line impedances and phase lengths shown in the BOMs and layouts. Vcc + VDROP Ic IB + VCE ISHUNT - Passive Bias Circuit Topology 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits 870-960 MHz Application Circuit (VCE=3V, Icq=315mA, 25°C) R4 Vs=+5V R5 R3 R2 RFin C7 C8 RFout C3 R1 SGA-9289 C4 C1 C6 L2 C2 L1 L3 C5 C10 C9 SGA-9289, Vce=3V, 870-960 MHz Apps Circuit STANFORD MICRODEVICES SOT-89 Eval Board ECB-100608-B R ef D es. Value Part Number Ref. Des. Value C 1,10 68 pF Rohm MCH18 series Z1 50 Ohms, 19 deg. @ 915 MHz C 2 3.9 pF Rohm MCH18 series Z2 50 Ohms, 6 deg. @ 915 MHz C 3,7 .1 uF Rohm MCH18 series Z3 50 Ohms, 9.3 deg. @ 915 MHz C 4,6 39 pF Rohm MCH18 series Z4 50 Ohms, 1.4 deg. @ 915 MHz C 5 10 pF Rohm MCH18 series Z5 50 Ohms, 5.3 deg. @ 915 MHz C 8 1000 pF Rohm MCH18 series Z6 50 Ohms, 14.1 deg. @ 915 MHz C 9 6.8 pF Rohm MCH18 series Z7 50 Ohms, 21.7 deg. @ 915 MHz L 1 6.8 nH TOKO LL1608-series Z8 50 Ohms, 22.1 deg. @ 915 MHz L 2,3 82 nH TOKO LL1608-series R 1 10 ohms Rohm MCH18 series R 2 56 ohms Rohm MCH18 series R 3 150 ohms Rohm MCH18 series R 4,5 12 ohms 2512 pkg 1 WATT R4 R3 C3 R1 +5 V R5 R2 C7 C8 C6 L3 C4 L2 C10 SGA-9289 C1 Z6 C2 Z1 Z2 Z3 Z4 Z8 Z7 Z5 C9 L1 C5 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Typical Performance - 870-960 MHz Application Circuit (VCE=3V, ICQ=315mA, 25°C) P1dB, OIP3 vs Frequency S-Parameters vs Frequency 42 -6 26.5 41 16 -12 14 -18 12 -24 Isolation 10 0.85 0.9 0.95 39 OIP3 @ 10 dBm/tone 22.5 0.87 1 0.90 Frequency (GHz) S-Parameters vs Frequency 37 0.96 Pout (dBm), Gain (dB) ORL -15 -20 IRL -30 -35 350 30 Pout 25 340 330 20 Gain 320 15 10 310 Ic 300 5 0.8 0.85 0.9 0.95 1 Ic (mA) IRL, ORL (dB) 0.93 Pout, Gain, Ic vs Pin -5 -25 38 Frequency (GHz) 0 -10 40 24.5 23.5 -30 0.8 P1dB 25.5 OIP3 (dBm) Gain (dB) Gain 27.5 Isolation (dB) 18 0 P1dB (dBm) 20 0 4 Frequency (GHz) 8 12 16 Pin (dBm) OIP3 vs Tone Level Noise Figure vs Frequency 5 Noise Figure (dB) 41 OIP3 (dBm) 40 39 38 37 8 10 12 14 3 2 1 0 0.87 36 6 4 16 0.90 0.93 Pout / Tone (dBm) Freq (GHz ) P 1d B (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S 22 (dB) NF (dB) 0.880 25.6 38.7 17.3 -25.7 -7.9 2.5 0.915 25.5 38.6 17.0 -29.7 -8.7 2.5 0.945 25.4 38.6 16.8 -33.0 -9.6 2.6 522 Almanor Ave., Sunnyvale, CA 94085 0.96 Frequency (GHz) Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits 870-960 MHz Application Circuit (VCE=5V, Icq=340mA, 25°C) R4 Vs=+8V R5 R2 R3 C7 C8 R6 RFin RFout C3 R1 SGA-9289 C6 C4 C1 L2 L1 C2 C10 L3 C9 C5 SGA-9289, Vce=5V, 870-960 MHz Apps Circuit STANFORD MICRODEVICES SOT-89 Eval Board ECB-100608-B R ef D es. Value Part Number Ref. Des. Value C 1,10 68 pF Rohm MCH18 series Z1 50 Ohms, 13.6 deg. @ 915 MHz C 2,9 3.9 pF Rohm MCH18 series Z2 50 Ohms, 3.5 deg. @ 915 MHz C 3,7 .1 uF Rohm MCH18 series Z3 50 Ohms, 3.4 deg. @ 915 MHz C 4,6 39 pF Rohm MCH18 series Z4 50 Ohms, 6.7 deg. @ 915 MHz C 5 10 pF Rohm MCH18 series Z5 50 Ohms, 6.6 deg. @ 915 MHz C 8 1000 pF Rohm MCH18 series Z6 50 Ohms, 23.5 deg. @ 915 MHz L 1 10 nH TOKO LL1608-FH82NT Z7 50 Ohms, 4.5 deg. @ 915 MHz L 2,3 82 nH TOKO LL1608-FH82NT R 1 10 ohms size 0603 R 2 36 ohms size 0603 R 3 220 ohms size 0603 R 4 16 ohms 2512 pkg 1 WATT R 5 18 ohms 2512 pkg 1 WATT R4 R2 +8V R5 R3 C7 R1 R6 C8 C6 C3 L3 C4 C10 SGA-9289 L2 Z5 C2 C1 Z1 Z2 Z6 Z7 Z4 Z3 C9 L1 522 Almanor Ave., Sunnyvale, CA 94085 C5 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Typical Performance - 870-960 MHz Application Circuit (VCE=5V, ICQ=340mA, 25°C) P1dB, OIP3 vs Frequency S-Parameters vs Frequency 0 30 18 -6 29 16 -12 20 45 12 -24 10 -30 0.8 0.85 0.9 0.95 P1dB (dBm) Isolation 28 43 27 42 26 0.9 Frequency (GHz) S-Parameters vs Frequency Pout (dBm), Gain (dB) IRL, ORL (dB) -20 IRL 370 35 30 360 Pout 25 350 20 340 Gain 15 10 330 Ic 320 5 -35 0.8 0.85 0.9 0.95 -1 1 Ic (mA) ORL -15 -30 2 5 Frequency (GHz) 8 11 14 Pin (dBm) Noise Figure vs Frequency OIP3 vs Tone Level 5 Noise Figure (dB) 43 42 OIP3 (dBm) 0.93 Pout, Gain, Ic vs Pin -5 -25 40 0.96 Frequency (GHz) 0 -10 41 OIP3 @ 13 dBm/tone 25 0.87 1 44 P1dB OIP3 (dBm) -18 14 Isolation (dB) Gain (dB) Gain 41 40 39 8 10 12 14 3 2 1 0 0.87 38 6 4 16 0.9 0.93 Pout / Tone (dBm) Freq (GHz ) P 1d B (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S 22 (dB) NF (dB) 0.880 29.2 41.4 18.2 -17.6 -16.4 2.8 0.915 29.2 41.3 17.9 -25.8 -15.1 2.9 0.945 29.0 40.9 17.7 -25.2 -14.3 2.9 522 Almanor Ave., Sunnyvale, CA 94085 0.96 Frequency (GHz) Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits 1930-1990 MHz Application Circuit (VCE=3V, Icq=315mA, 25°C) Vs=+5V R4 R3 R2 RFin C7 C8 RFout C2 R1 SGA-9289 C3 C6 L1 L2 C1 C4 C9 C5 SGA-9289, Vce=3V, 1930-1990 MHz Apps Circuit STANFORD MICRODEVICES SOT-89 Eval Board ECB-100608-B R ef D es. Value Part Number Ref. Des. Value C 1 1.5 pF Rohm MCH18 series Z1 50 Ohms, 7.7 deg. @ 1960 MHz 50 Ohms, 6.9 deg. @ 1960 MHz C 2,7 0.1 uF Rohm MCH18 series Z2 C 3,6,9 12 pF Rohm MCH18 series Z3 50 Ohms, 7.2 deg. @ 1960 MHz C 4,5 2.2 pF Rohm MCH18 series Z4 50 Ohms, 14.3 deg. @ 1960 MHz C 8 1000 pF Rohm MCH18 series Z5 50 Ohms, 43.8 deg. @ 1960 MHz L 1,2 22 nH TOKO LL1608-series R 1 10 ohms Rohm MCH18 series R 2 56 ohms Rohm MCH18 series R 3 150 ohms Rohm MCH18 series R 4,5 12 ohms 2512 pkg 1 WATT C2 R4 +5V R5 R3 R1 R2 C7 C8 C6 L2 C3 L1 C9 SGA-9289 Z5 Z4 C1 Z1 Z2 Z3 C5 C4 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Typical Performance - 1930-1990 MHz Application Circuit (VCE=3V, ICQ=315mA, 25°C) P1dB, OIP3 vs Frequency 26.5 13 -6 25.5 9 -12 -18 Isolation 7 5 1.8 1.9 2.0 42 P1dB 24.5 40 23.5 22.5 -30 21.5 1.93 38 1.95 Frequency (GHz) S-Parameters vs Frequency Pout (dBm), Gain (dB) -20 ORL -30 30 340 25 330 Pout 20 320 Ic 15 310 10 300 Gain 5 -35 1.8 1.9 2.0 290 0 2.1 Ic (mA) IRL, ORL (dB) IRL -15 5 Frequency (GHz) 10 15 20 Pin (dBm) Noise Figure vs Frequency OIP3 vs Tone Level 5 Noise Figure (dB) 41 40 OIP3 (dBm) 37 1.99 Pout, Gain, Ic vs Pin -5 -25 1.97 Frequency (GHz) 0 -10 39 OIP3 @ 10 dBm/tone -24 2.1 41 OIP3 (dBm) Gain 11 P1dB (dBm) 0 Isolation (dB) Gain (dB) S-Parameters vs Frequency 15 39 38 37 8 10 12 14 3 2 1 0 1.93 36 6 4 16 1.95 1.97 Pout / Tone (dBm) Freq (GHz ) P 1d B (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S 22 (dB) NF (dB) 1.93 25.9 39.3 11.1 -16.9 -15.7 2.8 1.96 26.0 39.3 11.0 -20.5 -15.5 2.9 1.99 26.0 38.4 10.9 -27.4 -15.9 2.9 522 Almanor Ave., Sunnyvale, CA 94085 1.99 Frequency (GHz) Phone: (800) SMI-MMIC 8 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits 1930-1990 MHz Application Circuit (VCE=5V, Icq=340mA, 25°C) Vs=+8V R5 R3 R4 C7 C8 R2 RFin RFout C2 R1 SGA-9289 C3 C5 L1 C1 L2 C6 C4 C9 SGA-9289, Vce=5V, 1930-1990 MHz Apps Circuit STANFORD MICRODEVICES SOT-89 Eval Board ECB-100608-B R ef D es. Value Part Number Ref. Des. Value C 1,3,5,9 12 pF Rohm MCH18 series Z1 50 Ohms, 47.1 deg. @ 1960 MHz C 2,7 0.1 uF Rohm MCH18 series Z2 50 Ohms, 7 deg. @ 1960 MHz C 4 2.7 pF Rohm MCH18 series Z3 50 Ohms, 7.2 deg. @ 1960 MHz C 6 1.8 pF Rohm MCH18 series Z4 50 Ohms, 14.3 deg. @ 1960 MHz C 8 1000 pF Rohm MCH18 series Z5 50 Ohms, 4.8 deg. @ 1960 MHz L 1,2 22 nH TOKO LL1608 series Z6 50 Ohms, 42.2 deg. @ 1960 MHz R 1 10 ohms Rohm MCH18 series R 2 51 ohms Rohm MCH18 series R 3 16 ohms Rohm MCH18 series R 4 240 ohms Rohm MCH18 series R 5 16 ohms 2512 pkg 1 WATT R 6 18 ohms 2512 pkg 1 WATT R5 R4 R3 +8V R6 C7 C2 R1 C8 R2 C5 L2 C3 L1 C9 SGA-9289 Z4 C1 Z1 Z2 Z6 Z5 Z3 C6 C4 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 9 http://www.stanfordmicro.com EAN-101535 Rev A DESIGN APPLICATION NOTE --- AN022 SGA-9289 Amplifier Application Circuits Typical Performance - 1930-1990 MHz Application Circuit (VCE=5V, ICQ=340mA, 25°C) P1dB, OIP3 vs Frequency 0 30 13 -6 29 -18 Isolation 7 -24 5 -30 1.8 1.85 1.9 1.95 2 2.05 P1dB (dBm) 9 -12 44 42 28 27 40 26 25 1.93 2.1 1.95 S-Parameters vs Frequency Pout (dBm), Gain (dB) -5 IRL -15 ORL 370 35 29 360 Pout 350 23 340 17 Ic 330 11 Gain 320 5 -30 1.8 1.85 1.9 1.95 2 2.05 Ic (mA) IRL, ORL (dB) 1.97 Pout, Gain, Ic vs Pin -25 8 2.1 10 Frequency (GHz) 12 14 16 18 20 22 Pin (dBm) OIP3 vs Tone Level Noise Figure vs Frequency 6 Noise Figure (dB) 45 43 OIP3 (dBm) 39 1.99 Frequency (GHz) 0 -20 41 OIP3 @ 13 dBm/tone Frequency (GHz) -10 43 P1dB OIP3 (dBm) Gain 11 Isolation (dB) Gain (dB) S-Parameters vs Frequency 15 41 39 37 35 8 10 12 14 16 18 5 4 3 2 1 1.93 20 1.95 1.97 Pout / Tone (dBm) Freq (GHz ) P 1d B (dBm) OIP3 (dBm) Gain (dB) S11 (dB) S 22 (dB) NF (dB) 1.93 28.5 41.3 11.1 -14.1 -19.8 4.0 1.96 28.5 41.4 10.9 -15.1 -19.5 4.1 1.99 28.7 41.4 10.7 -14.9 -19.1 4.3 522 Almanor Ave., Sunnyvale, CA 94085 1.99 Frequency (GHz) Phone: (800) SMI-MMIC 10 http://www.stanfordmicro.com EAN-101535 Rev A