VTO 110 VTO 175 IdAVM = 110/167 A VRRM = 1200-1600 V Three Phase Full Controlled Rectifier Bridge, B6C Preliminary data VRSM VDSM VRRM VDRM V V 1300 1500 1700 1200 1400 1600 2 Test Conditions IdAV IFRMS, ITRMS TC = 85°C; module per leg IFSM, ITSM TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 It (di/dt)cr (dv/dt)cr 5 1 4 3 2 1 6 B 110 58 167 89 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1150 1230 1500 1600 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1000 1070 1350 1450 A A 2 TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 6600 6280 11200 10750 As A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 5000 4750 9100 8830 A2s A2s 150 ● ● ● tp = 30 µs tp = 500 µs tp = 10 ms TVJ TVJM Tstg A/µs B - 500 A/µs 1000 V/µs 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 °C °C °C ● ● ≤ ≤ ≤ VISOL 50/60 Hz, RMS t = 1 min t=1s IISOL ≤ 1 mA 2500 3000 V~ V~ Md Mounting torque (M6) Terminal connection torque (M6) typ. 5-15 5-15 300 Nm lb.in. g Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips UL registered E72873 Applications ● TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) PGAVM Weight A + 5 6 Features ● TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 µs VD = 2/3 VDRM IG = 0.3 A, non repetitive diG/dt = 0.3 A/µs, IT = 1/3 • IdAV TVJ = TVJM IT = ITAVM 4 Maximum Ratings VTO 110 VTO 175 VRGM PGM 3 E D C VTO 110-12io7 VTO 175-12io7 VTO 110-14io7 VTO 175-14io7 VTO 175-16io7 Symbol 2 C ~ A Type E ~ D ~ Input rectifier for PWM converter Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Advantages ● ● ● Easy to mount with two screws Space and weight savings Improved temperature and power cycling Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080227a 1-2 VTO 110 VTO 175 Symbol Test Conditions Characteristic Values VTO 110 VTO 175 IR, ID VR = VRRM; VD = VDRM VF, VT IF, IT = 200 A, TVJ = 25°C VT0 rT For power-loss calculations only (TVJ = 125°C) ≤ 1.75 1.57 V 0.85 6 0.85 3.5 V mΩ 1.5 1.6 100 200 V V mA mA VD = 2/3 VDRM VD = 2/3 VDRM ≤ ≤ 0.2 5 V mA ≤ 450 mA TVJ = 25°C; VD = 6 V; RGK = ∞ ≤ 200 mA TVJ = 25°C; VD = ½ VDRM IG = 0.3 A; diG/dt = 0.3 A/µs ≤ 2 µs IGT VD = 6 V; VGD IGD TVJ = TVJM; TVJ = TVJM; IL IG = 0.3 A; tG = 30 µs diG/dt = 0.3 A/µs IH tgd TVJ TVJ TVJ TVJ = = = = TVJ = 25°C 0.65 0.108 0.8 0.133 Creeping distance on surface Creepage distance in air Max. allowable acceleration dS dA a VG 2 0.46 0.077 0.55 0.092 K/W K/W K/W K/W 10 9.4 50 3 6 1 5 1 4 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 0.1 1 10 100 1000 IG mA Fig. 1 Gate trigger characteristics 120 A per thyristor (diode); DC current per module per thyristor (diode); DC current per module RthJH mA mA ≤ ≤ ≤ ≤ VD = 6 V; RthJC 5 0.3 25°C -40°C 25°C -40°C VGT 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C V ≤ ≤ TVJ = TVJM TVJ = 25°C 10 IdAV VTO 110 100 80 mm mm m/s2 60 40 20 0 0 50 100 150 °C TC Fig. 2 DC output current at case temperature Dimensions in mm (1 mm = 0.0394") M6x12 7 900 A 0.7 VTO 110 50 Hz 80% VRRM 800 30 IFSM K/W 0.6 ZthJC 700 0.5 TVJ = 45°C 3 VTO 110 600 0.4 94 500 80 72 26 0.3 26 400 15 TVJ = 125°C 0.2 D ~ E ~ B - A + 4 2 5 1 6 12 2.8 x 0.8 0.1 200 3 7 6 5 5 54 27 6.5 C ~ 6.5 300 100 10-3 25 66 M6 10-1 100 t Fig. 3 Surge overload current IFSM: Crest value, t: duration IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 10-2 s 101 0.0 10-3 10-2 10-1 100 101 s t Fig. 4 Transient thermal impedance junction to case (per leg) 20080227a 2-2