Three Phase Full Controlled Rectifier Bridge, B6C

VTO 110
VTO 175
IdAVM = 110/167 A
VRRM = 1200-1600 V
Three Phase Full Controlled
Rectifier Bridge, B6C
Preliminary data
VRSM
VDSM
VRRM
VDRM
V
V
1300
1500
1700
1200
1400
1600
2
Test Conditions
IdAV
IFRMS, ITRMS
TC = 85°C; module
per leg
IFSM, ITSM
TVJ = 45°C;
VR = 0
TVJ = TVJM
VR = 0
It
(di/dt)cr
(dv/dt)cr
5
1
4
3
2
1
6
B
110
58
167
89
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1150
1230
1500
1600
A
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1000
1070
1350
1450
A
A
2
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
6600
6280
11200
10750
As
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
5000
4750
9100
8830
A2s
A2s
150
●
●
●
tp = 30 µs
tp = 500 µs
tp = 10 ms
TVJ
TVJM
Tstg
A/µs
B
-
500
A/µs
1000
V/µs
10
V
10
5
1
0.5
W
W
W
W
-40...+125
125
-40...+125
°C
°C
°C
●
●
≤
≤
≤
VISOL
50/60 Hz, RMS t = 1 min
t=1s
IISOL ≤ 1 mA
2500
3000
V~
V~
Md
Mounting torque (M6)
Terminal connection torque (M6)
typ.
5-15
5-15
300
Nm
lb.in.
g
Package with screw terminals
Isolation voltage 3000 V~
Planar passivated chips
UL registered E72873
Applications
●
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
PGAVM
Weight
A
+
5
6
Features
●
TVJ = TVJM
repetitive, IT = 50 A
f =400 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 0.3 A,
non repetitive
diG/dt = 0.3 A/µs, IT = 1/3 • IdAV
TVJ = TVJM
IT = ITAVM
4
Maximum Ratings
VTO 110 VTO 175
VRGM
PGM
3
E
D
C
VTO 110-12io7 VTO 175-12io7
VTO 110-14io7 VTO 175-14io7
VTO 175-16io7
Symbol
2
C
~
A
Type
E
~
D
~
Input rectifier for PWM converter
Input rectifier for switch mode power
supplies (SMPS)
Softstart capacitor charging
Advantages
●
●
●
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080227a
1-2
VTO 110
VTO 175
Symbol
Test Conditions
Characteristic Values
VTO 110 VTO 175
IR, ID
VR = VRRM; VD = VDRM
VF, VT
IF, IT = 200 A, TVJ = 25°C
VT0
rT
For power-loss calculations only
(TVJ = 125°C)
≤
1.75
1.57
V
0.85
6
0.85
3.5
V
mΩ
1.5
1.6
100
200
V
V
mA
mA
VD = 2/3 VDRM
VD = 2/3 VDRM
≤
≤
0.2
5
V
mA
≤
450
mA
TVJ = 25°C; VD = 6 V; RGK = ∞
≤
200
mA
TVJ = 25°C; VD = ½ VDRM
IG = 0.3 A; diG/dt = 0.3 A/µs
≤
2
µs
IGT
VD = 6 V;
VGD
IGD
TVJ = TVJM;
TVJ = TVJM;
IL
IG = 0.3 A; tG = 30 µs
diG/dt = 0.3 A/µs
IH
tgd
TVJ
TVJ
TVJ
TVJ
=
=
=
=
TVJ = 25°C
0.65
0.108
0.8
0.133
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
dS
dA
a
VG
2
0.46
0.077
0.55
0.092
K/W
K/W
K/W
K/W
10
9.4
50
3
6
1
5
1
4
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
IGD, TVJ = 125°C
0.1
1
10
100
1000
IG
mA
Fig. 1 Gate trigger characteristics
120
A
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
RthJH
mA
mA
≤
≤
≤
≤
VD = 6 V;
RthJC
5
0.3
25°C
-40°C
25°C
-40°C
VGT
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
V
≤
≤
TVJ = TVJM
TVJ = 25°C
10
IdAV
VTO 110
100
80
mm
mm
m/s2
60
40
20
0
0
50
100
150
°C
TC
Fig. 2 DC output current at case
temperature
Dimensions in mm (1 mm = 0.0394")
M6x12
7
900
A
0.7
VTO 110
50 Hz
80% VRRM
800
30
IFSM
K/W
0.6
ZthJC
700
0.5
TVJ = 45°C
3
VTO 110
600
0.4
94
500
80
72
26
0.3
26
400
15
TVJ = 125°C
0.2
D ~
E ~
B -
A +
4
2
5
1
6
12
2.8 x 0.8
0.1
200
3
7
6 5 5
54
27
6.5
C ~
6.5
300
100
10-3
25
66
M6
10-1
100
t
Fig. 3 Surge overload current
IFSM: Crest value, t: duration
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
10-2
s
101
0.0
10-3
10-2
10-1
100
101
s
t
Fig. 4 Transient thermal impedance
junction to case (per leg)
20080227a
2-2