DSS 2x121-0045B IFAV = 2x120 A VRRM = 45 V VF = 0.59 V Power Schottky Rectifier VRSM VRRM V V 45 45 miniBLOC, SOT-227 B Type DSS 2x121-0045B Symbol Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 100°C; rectangular, d = 0.5 TC = 100°C; rectangular, d = 0.5; per device IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine EAS IAR 150 120 240 A A A 1800 A IAS = 28 A; L = 180 µH; TVJ = 25°C; non repetitive 112 mJ VA =1.5 • VRRM typ.; f=10 kHz; repetitive 2.8 A (dv/dt)cr 1000 TVJ TVJM Tstg Ptot TC = 25°C VISOL 50/60 Hz, RMS IISOL ≤ 1 mA Md mounting torque (M4) . terminal connection torque (M4) Weight typical Symbol Conditions IR VF Q V/µs -40...+150 150 -40...+150 °C °C °C 310 W 2500 V~ 1.1-1.5/9-13 1.1-1.5/9-13 30 Nm/lb.in. Nm/lb.in. g Characteristic Values typ. max. TVJ = 25°C VR = VRRM TVJ = 100°C VR = VRRM 120 500 mA mA IF = 120 A; IF = 120 A; IF = 240 A; 0.59 0.62 0.97 V V V 0.4 K/W K/W TVJ = 125°C TVJ = 25°C TVJ = 125°C RthJC RthCH 0.1 Features • International standard package miniBLOC • Isolation voltage 2500 V~ • UL registered E 72873 • 2 independent Schottky diodes in 1 package • Very low VF • Extremely low switching losses • Low IRM-values Applications • Rectifiers in switch mode power supplies (SMPS) • Free wheeling diode in low voltage converters Advantages • High reliability circuit operation • Low voltage peaks for reduced protection circuits • Low noise switching • Low losses Dimensions see pages D2 - 87-88 IXYS reserves the right to change limits, Conditions and dimensions. © 2000 IXYS All rights reserved 025 Pulse test: QPulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified D2 - 51 DSS 2x121-0045A 10000 10000 300 mA A 100 TVJ=150°C pF 1000 IR IF CT 125°C 100 100°C 1000 10 75°C 10 TVJ = 150°C 125°C 25°C 50°C 1 25°C TVJ= 25°C 1 0.0 100 0.1 0.2 0.4 0.6 0.8 V 1.0 0 10 20 30 Fig. 1 Maximum forward voltage drop characteristics 0 40 V 50 VR VF Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 10 20 30 VR 40 V Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 110 160 100 W A P(AV)90 120 A IFSM 80 IF(AV) d=0.5 DC 70 d= DC 0.5 0.33 0.25 0.17 0.08 60 80 50 40 30 40 20 10 0 0 0 40 80 0 120 °C 160 40 80 120 A µs IF(AV) TC Fig. 4 Average forward current IF(AV) versus case temperature TC tP Fig. 5 Forward power loss characteristics 1 K/W ZthJC 0.1 D=0.5 0.33 0.25 0.17 0.08 Single Pulse 0.01 0.001 DSS2x121-0045B 0.01 0.1 1s 10 t Note: All curves are per diode 014 Fig. 6 Transient thermal impedance junction to case at various duty cycles D2 - 52 © 2000 IXYS All rights reserved