IXYS DSS2X121

DSS 2x121-0045B
IFAV = 2x120 A
VRRM = 45 V
VF = 0.59 V
Power Schottky Rectifier
VRSM
VRRM
V
V
45
45
miniBLOC, SOT-227 B
Type
DSS 2x121-0045B
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
IFAVM
TC = 100°C; rectangular, d = 0.5
TC = 100°C; rectangular, d = 0.5; per device
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
IAR
150
120
240
A
A
A
1600
A
IAS = 28 A; L = 180 µH; TVJ = 25°C; non repetitive
112
mJ
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
2.8
A
(dv/dt)cr
1000
TVJ
TVJM
Tstg
Ptot
TC = 25°C
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
Md
mounting
torque (M4)
.
terminal connection torque (M4)
Weight
typical
Symbol
Conditions
IR
VF

V/ms
-40...+150
150
-40...+150
°C
°C
°C
310
W
2500
V~
1.1-1.5/9-13
1.1-1.5/9-13
30
Nm/lb.in.
Nm/lb.in.
g
Characteristic Values
typ.
max.
TVJ = 25°C VR = VRRM
TVJ = 100°C VR = VRRM
120
500
mA
mA
IF = 120 A;
IF = 120 A;
IF = 240 A;
0.59
0.62
0.97
V
V
V
0.4
K/W
K/W
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
RthJC
RthCH
0.1
Features
• International standard package
miniBLOC
• Isolation voltage 2500 V~
• UL registered E 72873
• 2 independent Schottky diodes in
1 package
• Very low VF
• Extremely low switching losses
• Low IRM-values
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Dimensions see outlines.pdf
IXYS reserves the right to change limits, Conditions and dimensions.
© 2002 IXYS All rights reserved
232
Pulse test:  Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSS 2x121-0045A
10000
10000
300
mA
A
100
TVJ=150°C
pF
1000
IR
IF
CT
125°C
100
100°C
1000
10
75°C
10
TVJ =
150°C
125°C
25°C
50°C
1
25°C
TVJ= 25°C
1
0.0
100
0.1
0.2
0.4
0.6
0.8 V 1.0
0
10
20
30
Fig. 1 Maximum forward voltage
drop characteristics
0
40 V 50
VR
VF
Fig. 2 Typ. value of reverse current IR
versus reverse voltage VR
10
20
30
VR
40 V
Fig. 3 Typ. junction capacitance CT
versus reverse voltage VR
110
160
100
W
A
P(AV)90
120
A
IFSM
80
IF(AV)
d=0.5
DC
70
d=
DC
0.5
0.33
0.25
0.17
0.08
60
80
50
40
30
40
20
10
0
0
0
40
80
0
120 °C 160
40
80
120
A
µs
IF(AV)
TC
Fig. 4 Average forward current IF(AV)
versus case temperature TC
tP
Fig. 5 Forward power loss
characteristics
1
K/W
ZthJC
0.1
D=0.5
0.33
0.25
0.17
0.08
Single Pulse
0.01
0.001
DSS2x121-0045B
0.01
0.1
1s
10
t
Note: All curves are per diode
232
Fig. 6 Transient thermal impedance junction to case at various duty cycles
© 2002 IXYS All rights reserved
2-2