HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID (cont) = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 52 A IAR TC = 25°C 13 A EAR TC = 25°C 18 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (TAB) TO-204 AA (IXFM) D 180 PD TO-247 AD (IXFH) G = Gate, S = Source, G D = Drain, TAB = Drain Features International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier ● ● 1.13/10 Nm/lb.in. Weight TO-204 = 18 g, TO-247 = 6 g ● ● ● ● Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications DC-DC converters Uninterruptible Power Supplies (UPS) Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays ● ● ● VDSS VGS = 0 V, ID = 250 mA 500 VGS(th) VDS = VGS, ID = 2.5 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) V 4 V ±100 nA TJ = 25°C TJ = 125°C 200 1 mA mA VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.4 ● ● ● ● Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density ● W ● ● IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 91524D (10/95) 1-4 IXFH 13N50 IXFH 13N50 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 ID25, pulse test 7.5 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 9.0 S 2800 pF 300 pF 70 pF TO-247 AD (IXFH) Outline 18 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, 27 40 ns td(off) ID = 0.5 • ID25, RG = 4.7 W (External) 76 100 ns 32 60 ns 110 120 nC 15 25 nC 40 50 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 0.7 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 13 A ISM Repetitive; pulse width limited by TJM 52 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V TJ = 25°C TJ = 125°C 250 350 ns ns t rr QRM IF = IS -di/dt = 100 A/ms, VR = 100 V IRM TJ = 25°C TJ = 125°C 0.6 1.25 mC mC TJ = 25°C TJ = 125°C 9 15 A A Dim. Millimeter Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AA (IXFM) Outline Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved Inches Min. Max. Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 2-4 IXFH 13N50 IXFH 13N50 Fig. 1 Output Characteristics 25 VGS=10V TJ = 25°C Fig. 2 Input Admittance 25 8V 7V 20 TJ = 25°C 6V ID - Amperes ID - Amperes 20 15 10 15 10 5V 5 5 0 0 0 5 10 15 20 0 1 2 3 VDS - Volts 6 7 8 9 10 Fig. 4 Temperature Dependence of Drain to Source Resistance 1.4 2.50 TJ = 25°C 2.25 1.3 VGS = 10V RDS(on) - Normalized RDS(on) - Normalized 5 VGS - Volts Fig. 3 RDS(on) vs. Drain Current 1.2 1.1 VGS = 15V 1.0 0.9 2.00 ID = 6A 1.75 1.50 1.25 1.00 0.75 0.8 0 5 10 15 20 0.50 -50 25 -25 0 ID - Amperes 50 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 15.0 1.2 13N50 1.1 BV/VG(th) - Normalized 12.5 10.0 7.5 5.0 2.5 0.0 -50 25 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature ID - Amperes 4 VGS(th) BVDSS 1.0 0.9 0.8 0.7 0.6 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 13N50 IXFH 13N50 Fig.7 Gate Charge Characteristic Curve 10 100 VDS = 250V 9 ID = 6.5A 8 10µs IG = 10mA ID - Amperes 7 VGS - Volts Fig.8 Forward Bias Safe Operating Area 6 5 4 3 10 Limited by RDS(on) 100µs 1ms 1 10ms 2 100ms 1 0 0.1 0 25 50 75 100 1 10 Gate Charge - nCoulombs 100 VDS - Volts Fig.9 Capacitance Curves Fig.10 Source Current vs. Source to Drain Voltage 25 4000 20 3000 Ciss IS - Amperes Capacitance - pF 3500 2500 2000 1500 15 TJ = 125°C 10 TJ = 25°C 1000 5 Coss 500 Crss 0 0 5 10 15 20 0 0.00 25 0.25 VDS - Volts 0.50 0.75 1.00 1.25 1.50 VSD - Volt Fig.11 Transient Thermal Impedance Thermal Response - K/W 1.00 D = 0.5 D = 0.2 0.10 D = 0.1 D = 0.05 D=0.02 D=0.01 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4