HiPerFETTM Power MOSFETs IXFH 7 N80 VDSS = 800 V IXFM 7 N80 ID (cont) = 7 A RDS(on) = 1.4 W trr = 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 7 A IDM TC = 25°C, pulse width limited by TJM 28 A IAR TC = 25°C 7 A EAR TC = 25°C 18 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Weight Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA VGS(th) VDS = VGS, ID = 2.5 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2 V 4.5 V ±100 nA TJ = 25°C TJ = 125°C 250 1 mA mA VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.4 W IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved (TAB) TO-204 AA (IXFM) D 180 PD TO-247 AD (IXFH) G = Gate, S = Source, G D = Drain, TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density 91527F(7/97) 1-4 IXFH 7N80 IXFM 7N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 4.7 W (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 4 6 S 2800 pF 250 pF 100 pF 35 100 ns 40 110 ns 100 200 ns 60 100 ns 110 130 nC 15 30 nC 50 70 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 0.7 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 RthJC RthCK 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD QRM K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 7 A Repetitive; pulse width limited by TJM 28 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V TJ = 25°C TJ = 125°C 250 400 ns ns t rr IF = IS -di/dt = 100 A/ms, VR = 100 V IRM TO-247 AD (IXFH) Outline Dim. Millimeter Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AA (IXFM) Outline TJ = 25°C TJ = 125°C 0.5 1.0 mC mC TJ = 25°C TJ = 125°C 7.5 9.0 A A Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved Inches Min. Max. Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 2-4 IXFH 7N80 IXFM 7N80 Fig. 1 Output Characteristics 9 9 6V TJ = 25°C 8 7 7 6 6 ID - Amperes ID - Amperes VGS = 10V TJ = 25°C 8 Fig. 2 Input Admittance 5 4 3 5V 2 5 4 3 2 1 1 0 0 5 10 15 20 25 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 30 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 3.0 2.50 TJ = 25°C 2.25 RDS(on) - Normalized RDS(on) - Ohms 2.8 2.6 2.4 VGS= 10V 2.2 VGS= 15V 2.0 2.00 1.75 ID = 3.5A 1.50 1.25 1.00 0.75 1.8 0 2 4 6 8 0.50 -50 10 -25 0 ID - Amperes 7 1.1 7N80 4 3 2 BV/VG(th) - Normalized 1.2 6 ID - Amperes 75 100 125 150 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 8 VGS(th) BVDSS 1.0 0.9 0.8 0.7 0.6 1 0 -50 50 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 5 25 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFH 7N80 IXFM 7N80 Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area 10 10µs VDS = 500V ID = 3.5A IG = 10mA 9 8 10 ID - Amperes VGE - Volts 7 6 5 4 3 Limited by RDS(on) 100µs 1ms 1 10ms 2 100ms 1 0 0.1 0 10 20 30 40 50 60 70 80 1 10 Gate Charge - nCoulombs Fig.10 Source Current vs. Source to Drain Voltage 9 Ciss 8 7 ID - Amperes Capacitance - pF 1000 VDS - Volts Fig.9 Capacitance Curves 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 100 f = 1MHz VDS = 25V 10 4 TJ = 125°C 3 TJ = 25°C 1 Crss 5 5 2 Coss 0 6 15 20 0 0.0 25 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 D=0.02 0.01 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4