HiPerFETTM Power MOSFETs IXFH/IXFM 6 N90 IXFH/IXFM 6 N100 Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 6N90 900 V VDGR T J = 25°C to 150°C; RGS = 1 MW 6N100 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 6 A IDM TC = 25°C, pulse width limited by TJM 24 A IAR TC = 25°C 6 A EAR TC = 25°C 18 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns TC = 25°C W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ TL 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque 1.13/10 Weight Test Conditions VDSS VGS = 0 V, ID = 3 mA VGS(th) VDS = VGS, ID = 2.5 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V RDS(on) Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Symbol Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6N90 6N100 900 1000 2.0 TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 • ID25 6N90 6N100 Pulse test, t £ 300 ms, duty cycle d £ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved RDS(on) 900 V 1000 V 6A 6A 1.8 W 2.0 W TO-247 AD (IXFH) (TAB) TO-204 AA (IXFM) D 180 PD ID25 trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol VDSS V V 4.5 V ±100 nA 250 1 mA mA 1.8 2.0 W W G = Gate, S = Source, G D = Drain, TAB = Drain Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications • DC-DC converters • Synchronous rectification • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control • Temperature and lighting controls • Low voltage relays Advantages • Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) • Space savings • High power density 91529E(10/95) 1-4 IXFH 6N90 IXFM 6N90 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 td(off) RG = 4.7 W (External) tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 4 6 S 2600 pF 180 pF 45 pF 100 ns 40 110 ns 100 200 ns 60 100 ns 88 130 nC 21 30 nC 38 70 nC A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 0.7 K/W C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 G H 1.65 2.13 4.5 0.065 0.084 0.177 J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 0.25 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD QRM K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 6 A Repetitive; pulse width limited by TJM 24 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V TJ = 25°C TJ = 125°C 250 400 ns ns t rr IF = IS -di/dt = 100 A/ms, VR = 100 V IRM TO-247 AD (IXFH) Outline 35 RthJC RthCK Dim. Millimeter Min. Max. Inches Min. Max. L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 N 1.5 2.49 0.087 0.102 TO-204 AA (IXFM) Outline TJ = 25°C TJ = 125°C 0.5 1.0 mC mC TJ = 25°C TJ = 125°C 7.5 9.0 A A Dim. A B C D E F G H J K Q R © 2000 IXYS All rights reserved IXFH 6N100 IXFM 6N100 Millimeter Min. Max. 38.61 39.12 19.43 19.94 6.40 9.14 0.97 1.09 1.53 2.92 30.15 BSC 10.67 11.17 5.21 5.71 16.64 17.14 11.18 12.19 3.84 4.19 25.16 25.90 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 Inches Min. Max. 1.520 1.540 - 0.785 0.252 0.360 0.038 0.043 0.060 0.115 1.187 BSC 0.420 0.440 0.205 0.225 0.655 0.675 0.440 0.480 0.151 0.165 0.991 1.020 2-4 IXFH 6N90 IXFM 6N90 Fig. 1 Output Characteristics 9 9 6V 8 7 7 6 6 ID - Amperes ID - Amperes 8 Fig. 2 Input Admittance VGS = 10V TJ =25°C 5 4 3 5V 2 TJ = 25°C 5 4 TJ = 125°C 3 TJ = - 55°C 2 1 1 0 0 5 10 15 20 25 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 30 VDS - Volts VGS - Volts Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence of Drain to Source Resistance 3.0 2.50 TJ =25°C 2.25 RDS(on) - Normalized RDS(on) - Ohms 2.8 2.6 2.4 VGS= 10V 2.2 VGS= 15V 2.0 2.00 1.75 ID = 3.0A 1.50 1.25 1.00 0.75 1.8 0 2 4 6 8 0.50 -50 10 -25 0 ID - Amperes 7 IXFH 6N100 IXFM 6N100 25 50 75 TJ - Degrees C Fig. 5 Drain Current vs. Case Temperature 1.2 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage BVDSS VGS(th) 1.1 ID - Amperes 6N90 5 4 6N100 3 2 BV/VG(th) - Normalized 6 1.0 0.9 0.8 0.7 0.6 1 0 -50 100 125 150 -25 0 25 50 75 TC - Degrees C © 2000 IXYS All rights reserved 100 125 150 0.5 -50 -25 0 25 50 75 100 125 150 TJ- Degrees C 3-4 IXFH 6N90 IXFM 6N90 Fig.7 Gate Charge Characteristic Curve IXFH 6N100 IXFM 6N100 Fig.8 Forward Bias Safe Operating Area 10 10µs VDS = 500V ID = 3.0A IG = 10mA 9 8 10 ID - Amperes VGE - Volts 100µs Limited by RDS(on) 7 6 5 4 3 1ms 1 10ms 2 0 0.1 0 10 20 30 40 50 60 70 80 1 10 Gate Charge - nCoulombs 2750 2500 2250 2000 1750 1500 1250 1000 750 500 250 0 100 1000 VDS - Volts Fig.9 Capacitance Curves Fig.10Source Current vs. Source to Drain Voltage 9 Ciss 8 7 ID - Amperes Capacitance - pF 100ms 6N90 limit 6N100 limit 1 f = 1 MHz VDS = 25V 6 5 4 3 2 Coss 5 10 TJ = 25°C 1 Crss 0 TJ = 125°C 15 20 0 0.0 25 0.2 VCE - Volts 0.4 0.6 0.8 1.0 1.2 1.4 VDS - Volts Fig.11 Transient Thermal Impedance Thermal Response - K/W 1.000 D=0.5 0.100 D=0.2 D=0.1 D=0.05 D=0.02 0.010 D=0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds © 2000 IXYS All rights reserved 4-4