HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 V A 8 mW (Electrically Isolated Back Surface) RDS(on) = Single MOSFET Die trr £ 250 ns Preliminary data Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW 100 100 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID(RMS) IDM IAR TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C 165 76 720 180 A A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS T J £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 100 V VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 90A Note 1 ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved G D Isolated back surface* G = Gate S = Source D = Drain * Patent pending Features TJ TJM Tstg TL ISOPLUS 247TM 100 mA 2 mA 8 mW • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<25pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98584A (7/00) 1-2 IXFR 180N10 Symbol Test Conditions gfs VDS = 10 V; ID = 90A Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 2 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 90A td(off) RG = 1 W (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 90A Qgd 60 90 S 9400 pF 3200 pF 1660 pF 50 ns 90 ns 140 ns 65 ns 400 nC 65 nC 220 nC RthJC 0.30 0.15 RthCK Source-Drain Diode K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive; pulse width limited by TJM 720 A VSD IF = 100A, VGS = 0 V, Note 1 1.5 V 250 ns t rr QRM IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM 1.1 mC 13 A ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2