HiPerFETTM Power MOSFETs IXFR 80N20Q TM ISOPLUS247 , Q-Class (Electrically Isolated Back Surface) VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 200 V = 71 A = 28mW Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 200 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 71 A IDM TC = 25°C, pulse width limited by TJM 320 A IAR TC = 25°C 80 A EAR TC = 25°C 45 mJ 1.5 J 5 V/ns 310 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C EAS dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C TL 1.6 mm (0.063 in) from case for 10 s 300 Md Mounting torque 1.13/10 Weight °C Nm/lb.in. 5 Symbol Test Conditions VDSS VGS = 0 V, ID = 250 uA 200 VGS(th) VDS = VGS, ID = 4 mA 2.0 IGSS VGS = ±20 VDC, VDS = 0 g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. V 4.0 ±100 V ISOPLUS 247TM E153432 G D G = Gate S = Source D = Drain TAB = Drain Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control nA Advantages IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Note 1 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 25 1 mA mA 28 mW • Easy assembly • Space savings • High power density 98617A (7/00) 1-2 IXFR 80N20Q Symbol Test Conditions gfs VDS = 10 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Note 1 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 35 45 S 4600 pF 1100 pF 500 pF 26 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 50 ns td(off) RG = 2 W (External), 75 ns 20 ns 180 nC 39 nC 100 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.40 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 80 A Repetitive; pulse width limited by TJM 320 A IF = IS, VGS = 0 V, Note 1 1.5 V 200 ns t rr QRM K/W IF = IS, -di/dt = 100 A/ms, VR = 100 V IRM 1.2 mC 10 A ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %; IT = 80A © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2