IXYS IXFR80N20Q

HiPerFETTM Power MOSFETs
IXFR 80N20Q
TM
ISOPLUS247 , Q-Class
(Electrically Isolated Back Surface)
VDSS
ID25
N-Channel Enhancement Mode
Avalanche Rated
Low Qg, High dv/dt
trr £ 200 ns
RDS(on)
= 200 V
= 71 A
= 28mW
Preliminary data
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
200
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
200
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
71
A
IDM
TC = 25°C, pulse width limited by TJM
320
A
IAR
TC = 25°C
80
A
EAR
TC = 25°C
45
mJ
1.5
J
5
V/ns
310
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
EAS
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
PD
TC = 25°C
TL
1.6 mm (0.063 in) from case for 10 s
300
Md
Mounting torque
1.13/10
Weight
°C
Nm/lb.in.
5
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250 uA
200
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
V
4.0
±100
V
ISOPLUS 247TM
E153432
G
D
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Note 1
TJ = 25°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
25
1
mA
mA
28
mW
• Easy assembly
• Space savings
• High power density
98617A (7/00)
1-2
IXFR 80N20Q
Symbol
Test Conditions
gfs
VDS = 10 V; ID = IT
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 1
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
35
45
S
4600
pF
1100
pF
500
pF
26
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
50
ns
td(off)
RG = 2 W (External),
75
ns
20
ns
180
nC
39
nC
100
nC
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
RthJC
0.40
0.15
RthCK
Source-Drain Diode
Symbol
Test Conditions
IS
VGS = 0 V
ISM
VSD
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
80
A
Repetitive;
pulse width limited by TJM
320
A
IF = IS, VGS = 0 V, Note 1
1.5
V
200
ns
t rr
QRM
K/W
IF = IS, -di/dt = 100 A/ms, VR = 100 V
IRM
1.2
mC
10
A
ISOPLUS 247 (IXFR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
Millimeter
Min. Max.
A
4.83
5.21
A1
2.29
2.54
A2
1.91
2.16
b
1.14
1.40
1.91
2.13
b1
b2
2.92
3.12
C
0.61
0.80
D 20.80 21.34
E
15.75 16.13
e
5.45 BSC
L
19.81 20.32
L1
3.81
4.32
Q
5.59
6.20
R
4.32
4.83
S
13.21 13.72
T
15.75 16.26
U
1.65
3.03
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
.520 .540
.620 .640
.065 .080
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %; IT = 80A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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