IXFR 34N80 VDSS = 800 HiPerFETTM Power MOSFETs ISOPLUS247TM ID25 = 28 RDS(on) = 0.24 (Electrically Isolated Backside) V A Ω trr ≤ 250 ns Single MOSFET Die Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C (MOSFET chip capability) TC = 25°C, Note 1 TC = 25°C 28 600 150 A A A EAR EAS TC = 25°C TC = 25°C 60 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns TC = 25°C W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C 2500 V~ 5 g TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS G D G = Gate S = Source Isolated backside* S D = Drain * Patent pending Features 400 PD ISOPLUS 247TM E153432 t = 1 min Weight l l l l l l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<25pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 3mA 150 V VGS(th) VDS = VGS, ID = 8mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 © 2000 IXYS All rights reserved ±100 nA TJ = 25°C TJ = 125°C 100 µA 2 mA 0.24 Ω l l l l DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages l l l Easy assembly Space savings High power density 98674A (02/00) IXFR 34N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = IT Notes 2, 3 20 35 S 7500 pF 920 pF Crss 220 pF td(on) 45 ns 45 ns 100 ns 40 ns 270 nC 60 nC 140 nC Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT td(off) RG = 1 Ω (External), Notes 2, 3 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2, 3 Qgd ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. 0.30 RthJC 0.15 RthCK Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM Repetitive; Note 1 VSD IF = IT, VGS = 0 V, Notes 2, 3 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. t rr QRM K/W IF = IT, -di/dt = 100 A/µs, VR = 100 V IRM 34 A 136 A 1.5 V 250 ns 1.4 µC 10 A A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 See IXFN 34N80 data sheet for characteric curves. Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. IT = 17A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025