Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 70N15 ISOPLUS247TM (Electrically Isolated Backside) trr £ 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 150 150 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 ID(RMS) IDM IAR TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C 67 280 70 70 A A A A EAR EAS TC = 25°C TC = 25°C 30 1.0 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 250 W TJ -55 ... +150 °C TJM Tstg 150 -55 ... +150 °C °C 300 °C 2500 V~ 5 g TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250mA 150 V VGS(th) VDS = VGS, ID = 4mA 2.0 4.0 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved VDSS = 150 V ID25 = 67 A RDS(on)= 28 mW 25 mA 750 mA 28 mW ISOPLUS 247TM E153432 Isolated backside* G = Gate D = Drain S = Source * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Rated for Unclamped Inductive Load Switching (UIS) • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 98714 (03/27/00) 1-2 IXFR 70N15 Symbol Test Conditions gfs VDS = 10 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Notes 2, 3 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 30 45 S 3600 pF 1080 pF 360 pF 35 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 52 ns td(off) RG = 1 W (External), Notes 2, 3 70 ns 23 ns 180 nC 28 nC 92 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Notes 2, 3 Qgd RthJC 0.5 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 70 A Repetitive; Note 1 280 A IF = IT, VGS = 0 V, Notes 2, 3 1.5 V 250 ns t rr QRM K/W IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM 0.85 mC 8 A ISOPLUS 247 (IXFR) OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 3. IT = 35A © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2