HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 23 92 26 A A A EAR EAS TC = 25°C TC = 25°C 45 1.5 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 310 W -55 ... +150 150 -55 ... +150 °C °C °C 250 °C 2500 V~ 5 g TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250mA 600 V VGS(th) VDS = VGS, ID = 4mA 2.5 4.5 V IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 ±100 nA TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved VDSS = 600 V ID25 = 23 A RDS(on) = 250 mW 25 mA 1 mA 250 mW ISOPLUS 247TM E153432 G = Gate S = Source D = Drain * Patent pending Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • Low drain to tab capacitance(<30pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Rated for Unclamped Inductive Load Switching (UIS) • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC & DC motor control Advantages • Easy assembly • Space savings • High power density 98727 (06/09/00) 1-2 IXFR 26N60Q Symbol Test Conditions gfs VDS = 10 V; ID = IT Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Notes 2, 3 C iss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss td(on) 14 22 S 5100 pF 560 pF 210 pF 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 32 ns td(off) RG = 2.0 W (External), Notes 2, 3 80 ns 15 ns tf Qg(on) Qgs 150 VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Notes 2, 3 Qgd nC 80 nC 0.4 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 26 A Repetitive; Note 1 104 A IF = IT, VGS = 0 V, Notes 2, 3 1.5 V 250 ns t rr IF = 50A,-di/dt = 100 A/ms, VR = 100 V IRM 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection nC 34 RthJC QRM 200 ISOPLUS 247 (IXFR) OUTLINE 1.0 mC 10 A Dim. Millimeter Min. Max. A 4.83 5.21 A1 2.29 2.54 A2 1.91 2.16 b 1.14 1.40 1.91 2.13 b1 b2 2.92 3.12 C 0.61 0.80 D 20.80 21.34 E 15.75 16.13 e 5.45 BSC L 19.81 20.32 L1 3.81 4.32 Q 5.59 6.20 R 4.32 4.83 S 13.21 13.72 T 15.75 16.26 U 1.65 3.03 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 .520 .540 .620 .640 .065 .080 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 3. IT = 13A © 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2