IXFR 90N30 HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS = 300 V ID25 = 75 A RDS(on) = 33 mW (Electrically Isolated Back Surface) trr £ 250 ns Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 300 300 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, Note 1 TC = 25°C 75 360 90 A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min Weight Symbol Test Conditions VDSS VGS = 0 V, ID = 250mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20 V, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 © 2000 IXYS All rights reserved Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Isolated backside* G = Gate S = Source D = Drain * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l l Battery chargers 300 V l Switched-mode and resonant-mode power supplies DC choppers 2.0 4.5 V l AC & DC motor control ±100 nA TJ = 25°C TJ = 125°C ISOPLUS 247TM E153432 100 mA 2 mA 33 mW Advantages l Easy assembly l Space savings l High power density l Low noise to ground 98764 (11/00) IXFR 90N30 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = IT Notes 2, 3 Ciss Coss 40 70 S 10000 pF 1800 pF 700 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 42 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT 55 ns td(off) RG = 2.0 W (External), Notes 2, 3 100 ns 40 ns 360 nC 60 nC 180 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.30 RthCK 0.15 Source-Drain Diode Symbol Test Conditions IS V GS = 0 V ISM Repetitive; Note 1 VSD IF = IT, VGS = 0 V, Notes 2, 3 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. trr QRM IRM K/W IF = 50A,-di/dt = 100 A/ms, VR = 100 V 90 A 360 A 1.5 V 250 ns 1.4 mC 10 A ISOPLUS 247 OUTLINE 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 Note: 1. Pulse width limited by TJM 2. Pulse test, t £ 300 ms, duty cycle d £ 2 % 3. IT = 45A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025