HiPerFETTM Power MOSFETs IXFL 39N90 VDSS ID25 ISOPLUS264TM RDS(on) t (Electrically Isolated Backside) Single Die MOSFET = 900 V = 34 A Ω = 220 mΩ < ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C, Chip capability 34 A IDM TC = 25°C, Note 1 154 A IAR TC = 25°C 39 A EAR TC = 25°C 64 mJ EAS TC = 25°C 4 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 580 W -40 ... +150 °C TJM 150 °C Tstg -40 ... +150 °C 2500 3000 V~ V~ 8 g TJ VISOL 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s Weight ISOPLUS-264TM G Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS V GS = 0 V, ID = 3 mA 900 VGH(th) V DS = VGS, ID = 8 mA 2.5 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = IT Notes 2, 3 © 2003 IXYS All rights reserved TJ = 25°C TJ = 125°C V 5.0 V ±200 nA 100 2 µA mA 220 mΩ S G = Gate S = Source (Backside) D = Drain Features z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) z z Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Fast intrinsic Rectifier Applications z DC-DC converters z Battery chargers Switched-mode and resonant-mode power supplies DC choppers z Symbol D z z AC motor control Advantages z Easy assembly z Space savings z High power density DS99094(10/03) IXFL 39N90 Symbol Test Conditions gfs VDS = 15 V; ID = IT, Note 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 45 S 13400 pF 1230 pF Crss 320 pF td(on) 45 ns 68 ns 125 ns 30 ns 375 nC 75 nC 190 nC tr VGS = 10 V, VDS = 0.5 • VDSS, ID = IT td(off) RG = 1 Ω (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT Qgd RthJC 0.22 RthCK 0.07 Source-Drain Diode ISOPLUS 264 OUTLINE K/W K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 39 A ISM Repetitive; Note 1 154 A VSD IF = IS, VGS = 0 V, Note 2 1.3 V t rr QRM IRM IF = 25A, -di/dt = 100 A/µs, VR = 100 V 250 ns µC A 2 9 Please see IXFN39N90 data sheet for characteristic curves. Notes: 1. Pulse width limited by TJM. 2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%. 3. IT Test current: IT = 19.5 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343