IXYS IXFL39N90

HiPerFETTM Power MOSFETs IXFL 39N90 VDSS
ID25
ISOPLUS264TM
RDS(on)
t
(Electrically Isolated Backside)
Single Die MOSFET
= 900 V
= 34 A
Ω
= 220 mΩ
< ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
900
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
900
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C, Chip capability
34
A
IDM
TC = 25°C, Note 1
154
A
IAR
TC = 25°C
39
A
EAR
TC = 25°C
64
mJ
EAS
TC = 25°C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TC = 25°C
580
W
-40 ... +150
°C
TJM
150
°C
Tstg
-40 ... +150
°C
2500
3000
V~
V~
8
g
TJ
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t=1s
Weight
ISOPLUS-264TM
G
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
V GS = 0 V, ID = 3 mA
900
VGH(th)
V DS = VGS, ID = 8 mA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V GS = 10 V, ID = IT
Notes 2, 3
© 2003 IXYS All rights reserved
TJ = 25°C
TJ = 125°C
V
5.0
V
±200
nA
100
2
µA
mA
220
mΩ
S
G = Gate
S = Source
(Backside)
D = Drain
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
z
z
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
z
Unclamped Inductive Switching (UIS)
rated
z
Fast intrinsic Rectifier
Applications
z
DC-DC converters
z
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
z
Symbol
D
z
z
AC motor control
Advantages
z
Easy assembly
z
Space savings
z
High power density
DS99094(10/03)
IXFL 39N90
Symbol
Test Conditions
gfs
VDS = 15 V; ID = IT, Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ. max.
30
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
45
S
13400
pF
1230
pF
Crss
320
pF
td(on)
45
ns
68
ns
125
ns
30
ns
375
nC
75
nC
190
nC
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
td(off)
RG = 1 Ω (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
RthJC
0.22
RthCK
0.07
Source-Drain Diode
ISOPLUS 264 OUTLINE
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
39
A
ISM
Repetitive;
Note 1
154
A
VSD
IF = IS, VGS = 0 V,
Note 2
1.3
V
t rr
QRM
IRM
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
250
ns
µC
A
2
9
Please see IXFN39N90 data sheet
for characteristic curves.
Notes: 1. Pulse width limited by TJM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. IT Test current: IT = 19.5 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343